World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6237
World Ranking
4523
National Ranking
1603

Miroslav Micovic publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Miroslav Micovic sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 164 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Miroslav Micovic D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Miroslav Micovic sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to gallium nitride electronics

Overview

Miroslav Micovic is affiliated with HRL Laboratories in the United States. The scientist's work is connected to this research institution, which focuses on advanced technology and engineering projects.

Micovic holds the distinction of being named an IEEE Fellow in 2019. This recognition was awarded for contributions to gallium nitride electronics, indicating specialization in semiconductor materials and electronic device development.

The available data does not include specific publications, coauthors, or detailed information on main fields or subfields of study beyond the award citation. However, the fellowship citation suggests their work centers on electronics involving gallium nitride, a material notable for its applications in high-performance electronic devices.

There is no publicly listed information about recent papers, frequent publication venues, or book publications related to their research profile.

Best Publications

  • Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

    Keisuke Shinohara;Dean C. Regan;Yan Tang;Andrea L. Corrion

  • Highly efficient light-emitting diodes with microcavities

    E. F. Schubert;N. E. J. Hunt;M. Micovic;R. J. Malik

  • Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

    Yan Tang;Keisuke Shinohara;Dean Regan;Andrea Corrion

  • Temperature and modulation characteristics of resonant-cavity light-emitting diodes

    E.F. Schubert;N.E.J. Hunt;R.J. Malik;M. Micovic

  • Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

    J.S. Moon;Shihchang Wu;D. Wong;I. Milosavljevic

  • 92–96 GHz GaN power amplifiers

    M. Micovic;A. Kurdoghlian;A. Margomenos;D. F. Brown

  • 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

    J.S. Moon;D. Wong;M. Hu;P. Hashimoto

  • GaN double heterojunction field effect transistor for microwave and millimeterwave power applications

    M. Micovic;P. Hashimoto;Ming Hu;I. Milosavljevic

  • GaN HFET for W-band Power Applications

    M. Micovic;A. Kurdoghlian;P. Hashimoto;M. Hu

  • Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

    K. Shinohara;D. Regan;A. Corrion;D. Brown

  • GaN/AlGaN high electron mobility transistors with f of 110 GHz

    M. Micovic;N.X. Nguyen;P. Janke;W.-S. Wong

  • High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

    N.X. Nguyen;M. Micovic;W.-S. Wong;P. Hashimoto

  • Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

    K. Shinohara;D. Regan;I. Milosavljevic;A. L. Corrion

  • Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique

    Shawn D. Burnham;Karim Boutros;Paul Hashimoto;Colleen Butler

  • Self-aligned-gate GaN-HEMTs with heavily-doped n + -GaN ohmic contacts to 2DEG

    K. Shinohara;D. Regan;A. Corrion;D. Brown

  • GaN Technology for E, W and G-Band Applications

    A. Margomenos;A. Kurdoghlian;M. Micovic;K. Shinohara

  • High power-low noise microwave gan heterojunction field effet transistor

    Miroslav Micovic;Mike Antcliffe;Tahir Hussain;Paul Hashimoto

  • GaN enhancement/depletion-mode FET logic for mixed signal applications

    M. Micovic;T. Tsen;M. Hu;P. Hashimoto

  • High frequency GaN HEMTs for RF MMIC applications

    M. Micovic;D. F. Brown;D. Regan;J. Wong

  • W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

    D. F. Brown;A. Williams;K. Shinohara;A. Kurdoghlian

  • 220GHz f T and 400GHz f max in 40-nm GaN DH-HEMTs with re-grown ohmic

    K. Shinohara;A. Corrion;D. Regan;I. Milosavljevic

  • Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f T / f max of 454/444 GHz

    Yan Tang;Keisuke Shinohara;Dean Regan;Andrea Corrion

Frequent Co-Authors

Adele E. Schmitz
Adele E. Schmitz HRL Laboratories (United States)
David H. Chow
David H. Chow HRL Laboratories (United States)
Lorene Samoska
Lorene Samoska Jet Propulsion Lab
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego
Theresa S. Mayer
Theresa S. Mayer Purdue University West Lafayette
Dimitris Pavlidis
Dimitris Pavlidis Boston University
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
Paul F. Goldsmith
Paul F. Goldsmith California Institute of Technology
Patrick Fay
Patrick Fay University of Notre Dame
Suzanne E. Mohney
Suzanne E. Mohney Pennsylvania State University

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