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Electronics and Electrical Engineering

D-Index
40
Citations
6237
World Ranking
4523
National Ranking
1602

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to gallium nitride electronics

Overview

Miroslav Micovic is affiliated with HRL Laboratories in the United States. The scientist's work is connected to this research institution, which focuses on advanced technology and engineering projects.

Micovic holds the distinction of being named an IEEE Fellow in 2019. This recognition was awarded for contributions to gallium nitride electronics, indicating specialization in semiconductor materials and electronic device development.

The available data does not include specific publications, coauthors, or detailed information on main fields or subfields of study beyond the award citation. However, the fellowship citation suggests their work centers on electronics involving gallium nitride, a material notable for its applications in high-performance electronic devices.

There is no publicly listed information about recent papers, frequent publication venues, or book publications related to their research profile.

Best Publications

  • Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

    Keisuke Shinohara;Dean C. Regan;Yan Tang;Andrea L. Corrion

  • Highly efficient light-emitting diodes with microcavities

    E. F. Schubert;N. E. J. Hunt;M. Micovic;R. J. Malik

  • Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

    Yan Tang;Keisuke Shinohara;Dean Regan;Andrea Corrion

  • Temperature and modulation characteristics of resonant-cavity light-emitting diodes

    E.F. Schubert;N.E.J. Hunt;R.J. Malik;M. Micovic

  • Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

    J.S. Moon;Shihchang Wu;D. Wong;I. Milosavljevic

  • 92–96 GHz GaN power amplifiers

    M. Micovic;A. Kurdoghlian;A. Margomenos;D. F. Brown

  • 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

    J.S. Moon;D. Wong;M. Hu;P. Hashimoto

  • GaN double heterojunction field effect transistor for microwave and millimeterwave power applications

    M. Micovic;P. Hashimoto;Ming Hu;I. Milosavljevic

  • GaN HFET for W-band Power Applications

    M. Micovic;A. Kurdoghlian;P. Hashimoto;M. Hu

  • Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

    K. Shinohara;D. Regan;A. Corrion;D. Brown

  • GaN/AlGaN high electron mobility transistors with f of 110 GHz

    M. Micovic;N.X. Nguyen;P. Janke;W.-S. Wong

  • High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

    N.X. Nguyen;M. Micovic;W.-S. Wong;P. Hashimoto

  • Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

    K. Shinohara;D. Regan;I. Milosavljevic;A. L. Corrion

  • Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique

    Shawn D. Burnham;Karim Boutros;Paul Hashimoto;Colleen Butler

  • Self-aligned-gate GaN-HEMTs with heavily-doped n + -GaN ohmic contacts to 2DEG

    K. Shinohara;D. Regan;A. Corrion;D. Brown

  • GaN Technology for E, W and G-Band Applications

    A. Margomenos;A. Kurdoghlian;M. Micovic;K. Shinohara

  • High power-low noise microwave gan heterojunction field effet transistor

    Miroslav Micovic;Mike Antcliffe;Tahir Hussain;Paul Hashimoto

  • GaN enhancement/depletion-mode FET logic for mixed signal applications

    M. Micovic;T. Tsen;M. Hu;P. Hashimoto

  • High frequency GaN HEMTs for RF MMIC applications

    M. Micovic;D. F. Brown;D. Regan;J. Wong

  • W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

    D. F. Brown;A. Williams;K. Shinohara;A. Kurdoghlian

  • 220GHz f T and 400GHz f max in 40-nm GaN DH-HEMTs with re-grown ohmic

    K. Shinohara;A. Corrion;D. Regan;I. Milosavljevic

  • Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f T / f max of 454/444 GHz

    Yan Tang;Keisuke Shinohara;Dean Regan;Andrea Corrion

Frequent Co-Authors

Adele E. Schmitz
Adele E. Schmitz HRL Laboratories (United States)
Theresa S. Mayer
Theresa S. Mayer Purdue University West Lafayette
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego
Dimitris Pavlidis
Dimitris Pavlidis Boston University
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
Patrick Fay
Patrick Fay University of Notre Dame
Suzanne E. Mohney
Suzanne E. Mohney Pennsylvania State University
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Goutam Chattopadhyay
Goutam Chattopadhyay Jet Propulsion Lab
Imran Mehdi
Imran Mehdi Jet Propulsion Lab

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