Optoelectronics, Nitride, Chemical vapor deposition, Sapphire and Layer are his primary areas of study. His Optoelectronics study deals with Ohmic contact intersecting with Semiconductor device. The Chemical vapor deposition study combines topics in areas such as Thin film, Responsivity and Ultraviolet.
His Sapphire research is multidisciplinary, incorporating elements of Silicon, Epitaxy and Photoluminescence. As part of his studies on Layer, Adam William Saxler frequently links adjacent subjects like Transistor. His Transistor course of study focuses on Substrate and Heterojunction.
His primary areas of investigation include Optoelectronics, Layer, Nitride, Doping and Transistor. Adam William Saxler has researched Optoelectronics in several fields, including Semiconductor device, Substrate and Epitaxy. His work carried out in the field of Layer brings together such families of science as Band gap and Lattice constant.
His studies deal with areas such as Electronic engineering, Silicon carbide, Heterojunction and Aluminium as well as Nitride. The concepts of his Doping study are interwoven with issues in Inorganic chemistry, Sapphire, Gallium and Analytical chemistry. His work on High electron, Field-effect transistor and High-electron-mobility transistor as part of general Transistor research is frequently linked to Communication channel, thereby connecting diverse disciplines of science.
His primary areas of study are Optoelectronics, Layer, Nitride, Semiconductor device and Doping. His Optoelectronics research integrates issues from Transistor, Silicon carbide and Epitaxy. Within one scientific family, Adam William Saxler focuses on topics pertaining to Wafer under Epitaxy, and may sometimes address concerns connected to High-electron-mobility transistor, Electron mobility and Sheet resistance.
His Layer study combines topics from a wide range of disciplines, such as Electronic engineering, Band gap and Lattice constant. His Nitride research incorporates themes from Inorganic chemistry and Heterojunction. His Semiconductor device research includes elements of Semiconductor structure and Ohmic contact.
The scientist’s investigation covers issues in Optoelectronics, Layer, Nitride, Doping and Dopant. Optoelectronics and Semiconductor device are commonly linked in his work. His research in Semiconductor device intersects with topics in Barrier layer, Ohmic contact and Semiconductor.
His Nitride study combines topics in areas such as Inorganic chemistry and Substrate. His Substrate research is multidisciplinary, incorporating perspectives in Epitaxy, Silicon carbide, Electrical contacts, Transistor and Electronic engineering. He has included themes like Aluminium and Gallium in his Dopant study.
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30-W/mm GaN HEMTs by field plate optimization
Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith.
IEEE Electron Device Letters (2004)
40-W/mm Double Field-plated GaN HEMTs
Y.-F. Wu;M. Moore;A. Saxler;T. Wisleder.
device research conference (2006)
Heavy doping effects in Mg-doped GaN
Peter Kozodoy;Huili Xing;Steven P. DenBaars;Umesh K. Mishra.
Journal of Applied Physics (2000)
Methods of passivating surfaces of wide bandgap semiconductor devices
Adam William Saxler;Scott Sheppard;Richard Peter Smith.
Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors
Adam W Saxler;ウィリアム サックスラー アダム.
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
Adam William Saxler;Richard Peter Smith;Scott T. Sheppard.
AlGaN ultraviolet photoconductors grown on sapphire
D. Walker;X. Zhang;P. Kung;A. Saxler.
Applied Physics Letters (1996)
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
P. Kung;A. Saxler;X. Zhang;D. Walker.
Applied Physics Letters (1995)
Methods of fabricating nitride-based transistors having regrown ohmic contact regions
Adam William Saxler;Richard Peter Smith.
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
Peter Kozodoy;Yulia P. Smorchkova;Monica Hansen;Huili Xing.
Applied Physics Letters (1999)
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