Colombo R. Bolognesi

Overview

Best Publications

• 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

  M.W. Dvorak;C.R. Bolognesi;O.J. Pitts;S.P. Watkins

  247
  Citations

• 205-GHz (Al,In)N/GaN HEMTs

  Haifeng Sun;A R Alt;H Benedickter;E Feltin

  213
  Citations

• Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

  J. Hu;X. G. Xu;J. A. H. Stotz;S. P. Watkins

  213
  Citations

• 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

  D. Marti;S. Tirelli;A. R. Alt;J. Roberts

  133
  Citations

• Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

  Andreas R. Alt;Diego Marti;C.R. Bolognesi

  117
  Citations

• Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

  Pascal Chevalier;Michael Schroter;Colombo R. Bolognesi;Vincenzo d'Alessandro

  114
  Citations

• Interface roughness scattering in InAs/AlSb quantum wells

  C. R. Bolognesi;H. Kroemer;J. H. English

  111
  Citations

• Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

  C.R. Bolognesi;E.J. Caine;H. Kroemer

  110
  Citations

• Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

  C. Nguyen;B. Brar;C. R. Bolognesi;J. J. Pekarik

  106
  Citations

• InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

  C.R. Bolognesi;M.M.W. Dvorak;P. Yeo;X.G. Xu

  102
  Citations

• Heavily carbon-doped GaAsSb grown on InP for HBT applications

  S.P. Watkins;O.J. Pitts;C. Dale;X.G. Xu

  93
  Citations

• 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

  Haifeng Sun;A.R. Alt;H. Benedickter;C.R. Bolognesi

  90
  Citations

• High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

  J.D. Werking;C.R. Bolognesi;L.-D. Chang;C. Nguyen

  89
  Citations

• Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

  C.R. Bolognesi;N. Matine;R.W. Dvorak;X.G. Xu

  83
  Citations

• Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

  Colombo R. Bolognesi;Martin W. Dvorak;Noureddine Matine;Oliver J. Pitts

  80
  Citations

• At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

  D.W. DiSanto;C.R. Bolognesi

  78
  Citations

• High-Performance 0.1- $\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

  Haifeng Sun;A.R. Alt;H. Benedickter;C.R. Bolognesi

  75
  Citations

• Fully Passivated AlInN/GaN HEMTs With $f_{ m T}/f_{ m MAX}$ of 205/220 GHz

  S. Tirelli;D. Marti;Haifeng Sun;A. R. Alt

  69
  Citations

• 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

  Diego Marti;Stefano Tirelli;Valeria Teppati;Lorenzo Lugani

  67
  Citations

• Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT = 143 GHz

  Haifeng Sun;Andreas R. Alt;Hansruedi Benedickter;Colombo R. Bolognesi

  66
  Citations

• 107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

  S. Tirelli;D. Marti;Haifeng Sun;A.R. Alt

  64
  Citations