Colombo R. Bolognesi

Colombo R. Bolognesi publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Colombo R. Bolognesi sits on this spectrum.

Colombo R. Bolognesi D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Colombo R. Bolognesi sits on this spectrum.

Overview

Best Publications

• 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

  M.W. Dvorak;C.R. Bolognesi;O.J. Pitts;S.P. Watkins

  247
  Citations

• 205-GHz (Al,In)N/GaN HEMTs

  Haifeng Sun;A R Alt;H Benedickter;E Feltin

  213
  Citations

• Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

  J. Hu;X. G. Xu;J. A. H. Stotz;S. P. Watkins

  213
  Citations

• 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

  D. Marti;S. Tirelli;A. R. Alt;J. Roberts

  133
  Citations

• Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

  Andreas R. Alt;Diego Marti;C.R. Bolognesi

  117
  Citations

• Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

  Pascal Chevalier;Michael Schroter;Colombo R. Bolognesi;Vincenzo d'Alessandro

  114
  Citations

• Interface roughness scattering in InAs/AlSb quantum wells

  C. R. Bolognesi;H. Kroemer;J. H. English

  111
  Citations

• Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

  C.R. Bolognesi;E.J. Caine;H. Kroemer

  110
  Citations

• Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

  C. Nguyen;B. Brar;C. R. Bolognesi;J. J. Pekarik

  106
  Citations

• InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

  C.R. Bolognesi;M.M.W. Dvorak;P. Yeo;X.G. Xu

  102
  Citations

• Heavily carbon-doped GaAsSb grown on InP for HBT applications

  S.P. Watkins;O.J. Pitts;C. Dale;X.G. Xu

  93
  Citations

• 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

  Haifeng Sun;A.R. Alt;H. Benedickter;C.R. Bolognesi

  90
  Citations

• High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

  J.D. Werking;C.R. Bolognesi;L.-D. Chang;C. Nguyen

  89
  Citations

• Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

  C.R. Bolognesi;N. Matine;R.W. Dvorak;X.G. Xu

  83
  Citations

• Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

  Colombo R. Bolognesi;Martin W. Dvorak;Noureddine Matine;Oliver J. Pitts

  80
  Citations

• At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

  D.W. DiSanto;C.R. Bolognesi

  78
  Citations

• High-Performance 0.1- $\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

  Haifeng Sun;A.R. Alt;H. Benedickter;C.R. Bolognesi

  75
  Citations

• Fully Passivated AlInN/GaN HEMTs With $f_{ m T}/f_{ m MAX}$ of 205/220 GHz

  S. Tirelli;D. Marti;Haifeng Sun;A. R. Alt

  69
  Citations

• 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

  Diego Marti;Stefano Tirelli;Valeria Teppati;Lorenzo Lugani

  67
  Citations

• Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT = 143 GHz

  Haifeng Sun;Andreas R. Alt;Hansruedi Benedickter;Colombo R. Bolognesi

  66
  Citations

• 107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

  S. Tirelli;D. Marti;Haifeng Sun;A.R. Alt

  64
  Citations