Geok Ing Ng

Overview

Best Publications

• Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

  Z. H. Liu;G. I. Ng;H. Zhou;S. Arulkumaran

  148
  Citations

• Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

  Z. H. Liu;G. I. Ng;S. Arulkumaran;Y. K. T. Maung

  140
  Citations

• AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

  S. Tripathy;Vivian K. X. Lin;S. B. Dolmanan;Joyce P. Y. Tan

  130
  Citations

• 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

  M. Wojtowicz;R. Lai;D.C. Streit;G.I. Ng

  123
  Citations

• Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

  Z. H. Liu;G. I. Ng;S. Arulkumaran;Y. K. T. Maung

  104
  Citations

• High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

  Zhi Hong Liu;Geok Ing Ng;S. Arulkumaran;Ye Maung

  103
  Citations

• InAlN/GaN HEMTs on Si With High ${{f}}_{ ext {T}}$ of 250 GHz

  Weichuan Xing;Zhihong Liu;Haodong Qiu;Kumud Ranjan

  97
  Citations

• Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

  G. Ye;H. Wang;S. Arulkumaran;G. I. Ng

  91
  Citations

• Improved Linearity for Low-Noise Applications in 0.25- $ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

  Z H Liu;G I Ng;S Arulkumaran;Y K T Maung

  88
  Citations

• Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

  W.‐P. Hong;G. I. Ng;P. K. Bhattacharya;D. Pavlidis

  88
  Citations

• Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

  Subramaniam Arulkumaran;Geok Ing Ng;Sahmuganathan Vicknesh;Hong Wang

  83
  Citations

• Demonstration of submicron-gate AlGaN/GaN high- electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

  Subramaniam Arulkumaran;Geok Ing Ng;Sahmuganathan Vicknesh;Hong Wang

  79
  Citations

• Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors

  Rohit Abraham John;Nguyen Anh Chien;Sudhanshu Shukla;Naveen Tiwari

  76
  Citations

• Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

  S. Arulkumaran;Z.H. Liu;G.I. Ng;W.C. Cheong

  73
  Citations

• Improved Power Device Figure-of-Merit (4.0×108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

  Subramaniam Arulkumaran;Sahmuganathan Vicknesh;Ng Geok Ing;Susai Lawrence Selvaraj

  72
  Citations

• Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs

  G.-I. Ng;D. Pavlidis;M. Jaffe;J. Singh

  71
  Citations

• Electrothermal Large-Signal Model of III–V FETs Including Frequency Dispersion and Charge Conservation

  Lin-Sheng Liu;Jian-Guo Ma;Geok-Ing Ng

  70
  Citations

• An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs

  J.-L. Cazaux;G.-I. Ng;D. Pavlidis;H.-F. Chau

  54
  Citations

• Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

  Unknown

  53
  Citations

• Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

  H. Q. Zheng;K. Radhakrishnan;H. Wang;K. H. Yuan

  52
  Citations

• Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

  G.I. Ng;W.-P. Hong;D. Pavlidis;M. Tutt

  52
  Citations

• Electrothermal large-signal model of III–V FETs accounting for frequency dispersion and charge conservation

  Lin-Sheng Liu;Jian-Guo Ma;Geok-Ing Ng

  50
  Citations

• Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- $\mu{ m m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({ m NH}_{4})_{2}{ m S}_{x}$ Treatment

  S. Arulkumaran;G. I. Ng;S. Vicknesh

  47
  Citations