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Geok Ing Ng

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 34 5797 5566 88 86 316 4932

Geok Ing Ng publications per year

The chart shows the history of publications by Geok Ing Ng between 1987 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Geok Ing Ng published across 39 years, from 1987 to 2025, averaging 8.9 papers a year. Output peaked at 32 publications in 2000. 19 of the 346 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1987 to 2025. Vertical axis: number of publications, 0 to 32. Peak 32 publications in 2000. 1987: 1 publication 1988: 7 publications 1989: 3 publications 1990: 11 publications 1991: 8 publications 1992: 7 publications 1993: 5 publications 1994: 9 publications 1995: 4 publications 1996: 3 publications 1997: 4 publications 1998: 7 publications 1999: 17 publications 2000: 32 publications 2001: 16 publications 2002: 8 publications 2003: 5 publications 2004: 0 publications 2005: 3 publications 2006: 3 publications 2007: 4 publications 2008: 2 publications 2009: 11 publications 2010: 13 publications 2011: 13 publications 2012: 13 publications 2013: 14 publications 2014: 16 publications 2015: 14 publications 2016: 16 publications 2017: 11 publications 2018: 10 publications 2019: 12 publications 2020: 12 publications 2021: 9 publications 2022: 0 publications 2023: 4 publications 2024: 11 publications 2025: 8 publications
1987 2025

346 publications in total across all disciplines

View publications per year as a table
Geok Ing Ng: publications per year, 1987 to 2025
Year Publications
1987 1
1988 7
1989 3
1990 11
1991 8
1992 7
1993 5
1994 9
1995 4
1996 3
1997 4
1998 7
1999 17
2000 32
2001 16
2002 8
2003 5
2004 0
2005 3
2006 3
2007 4
2008 2
2009 11
2010 13
2011 13
2012 13
2013 14
2014 16
2015 14
2016 16
2017 11
2018 10
2019 12
2020 12
2021 9
2022 0
2023 4
2024 11
2025 8
Total 346
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Geok Ing Ng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Geok Ing Ng sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 314–333 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 316 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276 316
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Geok Ing Ng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Geok Ing Ng sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 34 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244 34
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Geok Ing Ng is affiliated with Nanyang Technological University in Singapore. Their research primarily focuses on engineering and physics, with a concentrated expertise in electrical and electronic engineering and condensed matter physics. The work spans multiple subfields, including electronic, optical and magnetic materials, atomic and molecular physics, optics, and biomedical engineering.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Radio frequency integrated circuit design
  • Semiconductor quantum structures and devices
  • Metal and thin film mechanics
  • Silicon carbide semiconductor technologies

Geok Ing Ng has contributed to various publication venues, frequently publishing in:

  • Materials Science and Engineering B
  • Applied Physics Express
  • IEEE Electron Device Letters
  • physica status solidi (a)
  • Applied Physics Letters

Recent papers authored or co-authored by Geok Ing Ng include:

  • "Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors," 2020, Micromachines
  • "GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs," 2020, IEEE Microwave and Wireless Components Letters
  • "Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate," 2021, Materials Science and Engineering B
  • "AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs," 2021, Applied Physics Express
  • "Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering," 2021, Applied Physics Letters

Frequent collaborators with Geok Ing Ng include:

  • Hanlin Xie
  • S. Arulkumaran
  • Hanchao Li
  • Kumud Ranjan
  • Yue Wang

Best Publications

  • Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

    Z. H. Liu;G. I. Ng;H. Zhou;S. Arulkumaran

  • Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

    Z. H. Liu;G. I. Ng;S. Arulkumaran;Y. K. T. Maung

  • AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

    S. Tripathy;Vivian K. X. Lin;S. B. Dolmanan;Joyce P. Y. Tan

  • 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

    M. Wojtowicz;R. Lai;D.C. Streit;G.I. Ng

  • Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

    Z. H. Liu;G. I. Ng;S. Arulkumaran;Y. K. T. Maung

  • High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

    Zhi Hong Liu;Geok Ing Ng;S. Arulkumaran;Ye Maung

  • InAlN/GaN HEMTs on Si With High ${{f}}_{ ext {T}}$ of 250 GHz

    Weichuan Xing;Zhihong Liu;Haodong Qiu;Kumud Ranjan

  • Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

    G. Ye;H. Wang;S. Arulkumaran;G. I. Ng

  • Improved Linearity for Low-Noise Applications in 0.25- $ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

    Z H Liu;G I Ng;S Arulkumaran;Y K T Maung

  • Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

    W.‐P. Hong;G. I. Ng;P. K. Bhattacharya;D. Pavlidis

  • Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

    Subramaniam Arulkumaran;Geok Ing Ng;Sahmuganathan Vicknesh;Hong Wang

  • Demonstration of submicron-gate AlGaN/GaN high- electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

    Subramaniam Arulkumaran;Geok Ing Ng;Sahmuganathan Vicknesh;Hong Wang

  • Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors

    Rohit Abraham John;Nguyen Anh Chien;Sudhanshu Shukla;Naveen Tiwari

  • Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

    S. Arulkumaran;Z.H. Liu;G.I. Ng;W.C. Cheong

  • Improved Power Device Figure-of-Merit (4.0×108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

    Subramaniam Arulkumaran;Sahmuganathan Vicknesh;Ng Geok Ing;Susai Lawrence Selvaraj

  • Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs

    G.-I. Ng;D. Pavlidis;M. Jaffe;J. Singh

  • Electrothermal Large-Signal Model of III–V FETs Including Frequency Dispersion and Charge Conservation

    Lin-Sheng Liu;Jian-Guo Ma;Geok-Ing Ng

  • An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs

    J.-L. Cazaux;G.-I. Ng;D. Pavlidis;H.-F. Chau

  • Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

    Unknown

  • Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

    H. Q. Zheng;K. Radhakrishnan;H. Wang;K. H. Yuan

  • Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

    G.I. Ng;W.-P. Hong;D. Pavlidis;M. Tutt

  • Electrothermal large-signal model of III–V FETs accounting for frequency dispersion and charge conservation

    Lin-Sheng Liu;Jian-Guo Ma;Geok-Ing Ng

  • Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- $\mu{ m m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({ m NH}_{4})_{2}{ m S}_{x}$ Treatment

    S. Arulkumaran;G. I. Ng;S. Vicknesh

Frequent Co-Authors

Dimitris Pavlidis
Dimitris Pavlidis Boston University
Youngwoo Kwon
Youngwoo Kwon Seoul National University
Sukant K. Tripathy
Sukant K. Tripathy University of Massachusetts Lowell
Boon S. Ooi
Boon S. Ooi King Abdullah University of Science and Technology
Richard Lai
Richard Lai Northrop Grumman (United States)
John Kennedy
John Kennedy GNS Science
Choi Look Law
Choi Look Law Nanyang Technological University
Hiroshi Amano
Hiroshi Amano Nagoya University
Tomas Palacios
Tomas Palacios MIT
Eugene A. Fitzgerald
Eugene A. Fitzgerald MIT

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Best Scientists Citing Geok Ing Ng

Dimitris Pavlidis

Dimitris Pavlidis

Boston University

Publications: 28

Richard Lai

Richard Lai

Northrop Grumman (United States)

Publications: 27

Takashi Egawa

Takashi Egawa

Nagoya Institute of Technology

Publications: 23

Ai Qun Liu

Ai Qun Liu

Hong Kong Polytechnic University

Publications: 22

Fabrizio Roccaforte

Fabrizio Roccaforte

National Research Council (CNR)

Publications: 22

Eugene A. Fitzgerald

Eugene A. Fitzgerald

MIT

Publications: 18

Youngwoo Kwon

Youngwoo Kwon

Seoul National University

Publications: 18

Wen-Chau Liu

Wen-Chau Liu

National Cheng Kung University

Publications: 18

Sukant K. Tripathy

Sukant K. Tripathy

University of Massachusetts Lowell

Publications: 16

Yue Hao

Yue Hao

Xidian University

Publications: 16

Filippo Giannazzo

Filippo Giannazzo

National Research Council (CNR)

Publications: 16

Tomas Palacios

Tomas Palacios

MIT

Publications: 15

Huei Wang

Huei Wang

National Taiwan University

Publications: 15

Herbert Zirath

Herbert Zirath

Chalmers University of Technology

Publications: 14

Sen Huang

Sen Huang

Chinese Academy of Sciences

Publications: 14

Edward Yi Chang

Edward Yi Chang

National Yang Ming Chiao Tung University

Publications: 14

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