Geok Ing Ng

Geok Ing Ng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Geok Ing Ng sits on this spectrum.

Geok Ing Ng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Geok Ing Ng sits on this spectrum.

Overview

Best Publications

• Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

  Z. H. Liu;G. I. Ng;H. Zhou;S. Arulkumaran

  148
  Citations

• Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

  Z. H. Liu;G. I. Ng;S. Arulkumaran;Y. K. T. Maung

  140
  Citations

• AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

  S. Tripathy;Vivian K. X. Lin;S. B. Dolmanan;Joyce P. Y. Tan

  130
  Citations

• 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

  M. Wojtowicz;R. Lai;D.C. Streit;G.I. Ng

  123
  Citations

• Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

  Z. H. Liu;G. I. Ng;S. Arulkumaran;Y. K. T. Maung

  104
  Citations

• High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

  Zhi Hong Liu;Geok Ing Ng;S. Arulkumaran;Ye Maung

  103
  Citations

• InAlN/GaN HEMTs on Si With High ${{f}}_{ ext {T}}$ of 250 GHz

  Weichuan Xing;Zhihong Liu;Haodong Qiu;Kumud Ranjan

  97
  Citations

• Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

  G. Ye;H. Wang;S. Arulkumaran;G. I. Ng

  91
  Citations

• Improved Linearity for Low-Noise Applications in 0.25- $ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

  Z H Liu;G I Ng;S Arulkumaran;Y K T Maung

  88
  Citations

• Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

  W.‐P. Hong;G. I. Ng;P. K. Bhattacharya;D. Pavlidis

  88
  Citations

• Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

  Subramaniam Arulkumaran;Geok Ing Ng;Sahmuganathan Vicknesh;Hong Wang

  83
  Citations

• Demonstration of submicron-gate AlGaN/GaN high- electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

  Subramaniam Arulkumaran;Geok Ing Ng;Sahmuganathan Vicknesh;Hong Wang

  79
  Citations

• Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors

  Rohit Abraham John;Nguyen Anh Chien;Sudhanshu Shukla;Naveen Tiwari

  76
  Citations

• Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

  S. Arulkumaran;Z.H. Liu;G.I. Ng;W.C. Cheong

  73
  Citations

• Improved Power Device Figure-of-Merit (4.0×108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

  Subramaniam Arulkumaran;Sahmuganathan Vicknesh;Ng Geok Ing;Susai Lawrence Selvaraj

  72
  Citations

• Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs

  G.-I. Ng;D. Pavlidis;M. Jaffe;J. Singh

  71
  Citations

• Electrothermal Large-Signal Model of III–V FETs Including Frequency Dispersion and Charge Conservation

  Lin-Sheng Liu;Jian-Guo Ma;Geok-Ing Ng

  70
  Citations

• An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs

  J.-L. Cazaux;G.-I. Ng;D. Pavlidis;H.-F. Chau

  54
  Citations

• Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

  Unknown

  53
  Citations

• Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

  H. Q. Zheng;K. Radhakrishnan;H. Wang;K. H. Yuan

  52
  Citations

• Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

  G.I. Ng;W.-P. Hong;D. Pavlidis;M. Tutt

  52
  Citations

• Electrothermal large-signal model of III–V FETs accounting for frequency dispersion and charge conservation

  Lin-Sheng Liu;Jian-Guo Ma;Geok-Ing Ng

  50
  Citations

• Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- $\mu{ m m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({ m NH}_{4})_{2}{ m S}_{x}$ Treatment

  S. Arulkumaran;G. I. Ng;S. Vicknesh

  47
  Citations