D-Index & Metrics Best Publications
Takatomo Enoki

Takatomo Enoki

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 31 Citations 6,525 244 World Ranking 4523 National Ranking 200

Research.com Recognitions

Awards & Achievements

2013 - IEEE Fellow For contributions to compound semiconductor high speed integrated circuits for optical and wireless communication systems

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Transistor

Takatomo Enoki mainly focuses on High-electron-mobility transistor, Electrical engineering, Optoelectronics, Gallium arsenide and Transistor. His work deals with themes such as Electronic circuit, Electron density, Condensed matter physics and Wafer, which intersect with High-electron-mobility transistor. His work on Spin–orbit interaction and Heterojunction as part of general Condensed matter physics study is frequently linked to Spin transistor, Flory–Huggins solution theory and Rashba effect, therefore connecting diverse disciplines of science.

He has included themes like Threshold voltage, Phase shift module, Etching and Gate oxide in his Optoelectronics study. His study focuses on the intersection of Threshold voltage and fields such as Transconductance with connections in the field of Diode and Integrated circuit. His research integrates issues of Field-effect transistor, Atomic physics and Analytical chemistry in his study of Gallium arsenide.

His most cited work include:

  • Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure (1642 citations)
  • 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects (108 citations)
  • An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation (101 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Electrical engineering, High-electron-mobility transistor, Transistor and Gallium arsenide. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Etching and Transconductance. His Electrical engineering study incorporates themes from Optical communication, Electronic engineering and Gigabit.

As part of one scientific family, he deals mainly with the area of High-electron-mobility transistor, narrowing it down to issues related to the Amplifier, and often Baseband. His research integrates issues of Heterojunction bipolar transistor and Frequency divider in his study of Gallium arsenide. His Heterojunction study deals with Fermi gas intersecting with Condensed matter physics.

He most often published in these fields:

  • Optoelectronics (59.38%)
  • Electrical engineering (41.02%)
  • High-electron-mobility transistor (31.25%)

What were the highlights of his more recent work (between 2003-2012)?

  • Optoelectronics (59.38%)
  • Electrical engineering (41.02%)
  • High-electron-mobility transistor (31.25%)

In recent papers he was focusing on the following fields of study:

Takatomo Enoki spends much of his time researching Optoelectronics, Electrical engineering, High-electron-mobility transistor, Transistor and Heterojunction. The various areas that Takatomo Enoki examines in his Optoelectronics study include Layer, Epitaxy and Transconductance. His research in Electrical engineering intersects with topics in Optical communication and Gigabit.

His High-electron-mobility transistor research integrates issues from Electronic circuit, Extremely high frequency, Bandwidth, Optics and Integrated circuit. His work on High electron as part of general Transistor study is frequently connected to Degradation, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Heterojunction study also includes fields such as

  • Fermi gas, Sheet resistance and Nitride most often made with reference to Insulator,
  • Gate oxide which connect with Leakage.

Between 2003 and 2012, his most popular works were:

  • Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures (63 citations)
  • Vector sum phase shifter, optical transceiver, and control circuit (57 citations)
  • 120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 /spl mu/m-gate InP HEMTs (48 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Transistor

The scientist’s investigation covers issues in Electrical engineering, Optoelectronics, High-electron-mobility transistor, Transistor and Heterojunction. His research in Electrical engineering focuses on subjects like Optical communication, which are connected to Heterojunction bipolar transistor. Optoelectronics is closely attributed to Transconductance in his research.

He combines subjects such as Composite channel, Bandwidth, Miniaturization and Equivalent series resistance with his study of High-electron-mobility transistor. The study incorporates disciplines such as Cutoff frequency, Passivation, Dielectric and Leakage in addition to Transistor. Takatomo Enoki has researched Heterojunction in several fields, including Field-effect transistor, Nitride and Insulator.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure

Junsaku Nitta;Tatsushi Akazaki;Hideaki Takayanagi;Takatomo Enoki.
Physical Review Letters (1997)

2706 Citations

Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure

Junsaku Nitta;Tatsushi Akazaki;Hideaki Takayanagi;Takatomo Enoki.
Physical Review Letters (1997)

2706 Citations

0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

Takatomo Enoki;Masaaki Tomizawa;Yohtaro Umeda;Yasunobu Ishii.
Japanese Journal of Applied Physics (1994)

161 Citations

0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

Takatomo Enoki;Masaaki Tomizawa;Yohtaro Umeda;Yasunobu Ishii.
Japanese Journal of Applied Physics (1994)

161 Citations

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

T. Suemitsu;T. Enoki;N. Sano;M. Tomizawa.
IEEE Transactions on Electron Devices (1998)

148 Citations

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

T. Suemitsu;T. Enoki;N. Sano;M. Tomizawa.
IEEE Transactions on Electron Devices (1998)

148 Citations

A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure

Tatsushi Akazaki;Hideaki Takayanagi;Junsaku Nitta;Takatomo Enoki.
Applied Physics Letters (1996)

129 Citations

A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure

Tatsushi Akazaki;Hideaki Takayanagi;Junsaku Nitta;Takatomo Enoki.
Applied Physics Letters (1996)

129 Citations

ULTRAHIGH-SPEED INTEGRATED CIRCUITS USING INP-BASED HEMTS

Takatomo Enoki;Haruki Yokoyama;Yohtaro Umeda;Taiichi Otsuji.
Japanese Journal of Applied Physics (1998)

120 Citations

ULTRAHIGH-SPEED INTEGRATED CIRCUITS USING INP-BASED HEMTS

Takatomo Enoki;Haruki Yokoyama;Yohtaro Umeda;Taiichi Otsuji.
Japanese Journal of Applied Physics (1998)

120 Citations

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