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Takatomo Enoki

Takatomo Enoki

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
7612
World Ranking
4627
National Ranking
181

Research.com Recognitions

  • 2013 - IEEE Fellow For contributions to compound semiconductor high speed integrated circuits for optical and wireless communication systems

Overview

Takatomo Enoki is affiliated with NTT in Japan. Their research primarily focuses on areas within engineering and materials science, with particular attention to subfields such as mechanics of materials, materials chemistry, and ocean engineering.

Their recent academic contributions include a paper titled Non-collinear interaction of Rayleigh-Lamb and shear horizontal waves in a finite region in a plate, published in 2024 in the journal Wave Motion.

The main topics covered in their work span:

  • Ultrasonics and Acoustic Wave Propagation
  • Material Properties and Failure Mechanisms
  • Drilling and Well Engineering

Frequent collaborators in their research include:

  • Yosuke Ishii
  • Shiro Biwa

Publications have appeared predominantly in the venue Wave Motion.

In recognition of their professional achievements, Enoki was awarded the IEEE Fellow distinction in 2013 for contributions to compound semiconductor high speed integrated circuits for optical and wireless communication systems.

Best Publications

  • Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure

    Junsaku Nitta;Tatsushi Akazaki;Hideaki Takayanagi;Takatomo Enoki

  • High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

    K.J. Chen;T. Enoki;K. Maezawa;K. Arai

  • 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

    Takatomo Enoki;Masaaki Tomizawa;Yohtaro Umeda;Yasunobu Ishii

  • An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

    T. Suemitsu;T. Enoki;N. Sano;M. Tomizawa

  • A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure

    Tatsushi Akazaki;Hideaki Takayanagi;Junsaku Nitta;Takatomo Enoki

  • ULTRAHIGH-SPEED INTEGRATED CIRCUITS USING INP-BASED HEMTS

    Takatomo Enoki;Haruki Yokoyama;Yohtaro Umeda;Taiichi Otsuji

  • 30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

    T. Suemitsu;H. Yokoyama;T. Ishii;T. Enoki

  • Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

    Narihiko Maeda;Masanobu Hiroki;Noriyuki Watanabe;Yasuhiro Oda

  • Vector synthesis type phase shifter, optical transceiver, and control circuit correction

    Hideyuki Nosaka;Munehiko Hase;Shogo Yamanaka;Kimikazu Sano

  • An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

    T. Otsuji;K. Murata;T. Enoki;Y. Umeda

  • 40-Gb/s ICs for future lightwave communications systems

    T. Otsuji;Y. Imai;E. Sano;S. Kimura

  • Loss-compensated distributed baseband amplifier IC's for optical transmission systems

    S. Kimura;Y. Imai;Y. Umeda;T. Enoki

  • High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology

    T. Suemitsu;H. Yokoyama;Y. Umeda;T. Enoki

  • 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

    Tetsuya Suemitsu;Tetsuyoshi Ishii;Haruki Yokoyama;Takatomo Enoki

  • Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates

    N. Shigekawa;T. Enoki;T. Furuta;H. Ito

  • Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors

    Tetsuya Suemitsu;Takatomo Enoki;Haruki Yokoyama;Yasunobu Ishii

  • A high-Q broad-band active inductor and its application to a low-loss analog phase shifter

    H. Hayashi;M. Muraguchi;Y. Umeda;T. Enoki

  • 120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 /spl mu/m-gate InP HEMTs

    T. Kosugi;M. Tokumitsu;T. Enoki;M. Muraguchi

  • 0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC's

    T. Enoki;K. Yamasaki;K. Osafune;K. Ohwada

  • Design and characteristics of InGaAs/InP composite-channel HFET's

    Unknown

  • Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs

    T. Enoki;K. Arai;Y. Ishii

Frequent Co-Authors

Taiichi Otsuji
Taiichi Otsuji Tohoku University
Toshiki Makimoto
Toshiki Makimoto Waseda University
Akihiko Hirata
Akihiko Hirata Chiba Institute of Technology
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Toshiaki Tamamura
Toshiaki Tamamura NTT Electronics
Tadao Nagatsuma
Tadao Nagatsuma Osaka University
Enrico Zanoni
Enrico Zanoni University of Padua
Masahiro Asada
Masahiro Asada Tokyo Institute of Technology
Tadao Ishibashi
Tadao Ishibashi NTT (Japan)

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