2013 - IEEE Fellow For contributions to compound semiconductor high speed integrated circuits for optical and wireless communication systems
Takatomo Enoki mainly focuses on High-electron-mobility transistor, Electrical engineering, Optoelectronics, Gallium arsenide and Transistor. His work deals with themes such as Electronic circuit, Electron density, Condensed matter physics and Wafer, which intersect with High-electron-mobility transistor. His work on Spin–orbit interaction and Heterojunction as part of general Condensed matter physics study is frequently linked to Spin transistor, Flory–Huggins solution theory and Rashba effect, therefore connecting diverse disciplines of science.
He has included themes like Threshold voltage, Phase shift module, Etching and Gate oxide in his Optoelectronics study. His study focuses on the intersection of Threshold voltage and fields such as Transconductance with connections in the field of Diode and Integrated circuit. His research integrates issues of Field-effect transistor, Atomic physics and Analytical chemistry in his study of Gallium arsenide.
His primary areas of study are Optoelectronics, Electrical engineering, High-electron-mobility transistor, Transistor and Gallium arsenide. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Etching and Transconductance. His Electrical engineering study incorporates themes from Optical communication, Electronic engineering and Gigabit.
As part of one scientific family, he deals mainly with the area of High-electron-mobility transistor, narrowing it down to issues related to the Amplifier, and often Baseband. His research integrates issues of Heterojunction bipolar transistor and Frequency divider in his study of Gallium arsenide. His Heterojunction study deals with Fermi gas intersecting with Condensed matter physics.
Takatomo Enoki spends much of his time researching Optoelectronics, Electrical engineering, High-electron-mobility transistor, Transistor and Heterojunction. The various areas that Takatomo Enoki examines in his Optoelectronics study include Layer, Epitaxy and Transconductance. His research in Electrical engineering intersects with topics in Optical communication and Gigabit.
His High-electron-mobility transistor research integrates issues from Electronic circuit, Extremely high frequency, Bandwidth, Optics and Integrated circuit. His work on High electron as part of general Transistor study is frequently connected to Degradation, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Heterojunction study also includes fields such as
The scientist’s investigation covers issues in Electrical engineering, Optoelectronics, High-electron-mobility transistor, Transistor and Heterojunction. His research in Electrical engineering focuses on subjects like Optical communication, which are connected to Heterojunction bipolar transistor. Optoelectronics is closely attributed to Transconductance in his research.
He combines subjects such as Composite channel, Bandwidth, Miniaturization and Equivalent series resistance with his study of High-electron-mobility transistor. The study incorporates disciplines such as Cutoff frequency, Passivation, Dielectric and Leakage in addition to Transistor. Takatomo Enoki has researched Heterojunction in several fields, including Field-effect transistor, Nitride and Insulator.
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Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure
Junsaku Nitta;Tatsushi Akazaki;Hideaki Takayanagi;Takatomo Enoki.
Physical Review Letters (1997)
Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure
Junsaku Nitta;Tatsushi Akazaki;Hideaki Takayanagi;Takatomo Enoki.
Physical Review Letters (1997)
0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
Takatomo Enoki;Masaaki Tomizawa;Yohtaro Umeda;Yasunobu Ishii.
Japanese Journal of Applied Physics (1994)
0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
Takatomo Enoki;Masaaki Tomizawa;Yohtaro Umeda;Yasunobu Ishii.
Japanese Journal of Applied Physics (1994)
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
T. Suemitsu;T. Enoki;N. Sano;M. Tomizawa.
IEEE Transactions on Electron Devices (1998)
An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
T. Suemitsu;T. Enoki;N. Sano;M. Tomizawa.
IEEE Transactions on Electron Devices (1998)
A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure
Tatsushi Akazaki;Hideaki Takayanagi;Junsaku Nitta;Takatomo Enoki.
Applied Physics Letters (1996)
A Josephson field effect transistor using an InAs‐inserted‐channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure
Tatsushi Akazaki;Hideaki Takayanagi;Junsaku Nitta;Takatomo Enoki.
Applied Physics Letters (1996)
ULTRAHIGH-SPEED INTEGRATED CIRCUITS USING INP-BASED HEMTS
Takatomo Enoki;Haruki Yokoyama;Yohtaro Umeda;Taiichi Otsuji.
Japanese Journal of Applied Physics (1998)
ULTRAHIGH-SPEED INTEGRATED CIRCUITS USING INP-BASED HEMTS
Takatomo Enoki;Haruki Yokoyama;Yohtaro Umeda;Taiichi Otsuji.
Japanese Journal of Applied Physics (1998)
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