World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
11045
World Ranking
1576
National Ranking
52

Toshiaki Matsui publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toshiaki Matsui sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 427 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Toshiaki Matsui D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toshiaki Matsui sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 61 D-Index — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

    Y. Yamashita;A. Endoh;K. Shinohara;K. Hikosaka

  • An ultrawideband bandpass filter using broadside-coupled microstrip-coplanar waveguide structure

    Unknown

  • Gaussian-beam antenna

    Toshiaki Matsui;Masahiro Kiyokawa

  • Traffic monitoring system using vehicle identification

    Toshiaki Matsui;Harunobu Yuzawa;Akira Kobayashi

  • AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

    Masataka Higashiwaki;Takashi Mimura;Takashi Mimura;Toshiaki Matsui

  • 547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance

    K. Shinohara;Y. Yamashita;A. Endoh;I. Watanabe

  • AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

    M. Higashiwaki;T. Matsui;T. Mimura

  • Optical properties of Si-doped InN grown on sapphire (0001)

    T. Inushima;M. Higashiwaki;T. Matsui

  • AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

    M. Higashiwaki;T. Mimura;T. Matsui

  • Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

    Y. Yamashita;A. Endoh;K. Shinohara;M. Higashiwaki

  • Structural, dielectric, and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates

    T. Matsui;H. Tanaka;N. Fujimura;T. Ito

  • High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

    Masataka Higashiwaki;Toshiaki Matsui

  • Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

    K. Shinohara;Y. Yamashita;A. Endoh;K. Hikosaka

  • A new concept of focusing antennas using plane-parallel Fabry-Perot cavities with nonuniform mirrors

    R. Sauleau;P. Coquet;T. Matsui;J.-P. Daniel

  • Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

    Akira Endoh;Yoshimi Yamashita;Keiji Ikeda;Masataka Higashiwaki

  • Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

    N. Onojima;M. Higashiwaki;J. Suda;T. Kimoto

  • Open resonator for precision dielectric measurements in the 100 GHz band

    Unknown

  • 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

    Masataka Higashiwaki;Takashi Mimura;Takashi Mimura;Toshiaki Matsui

  • InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

    Masataka Higashiwaki;Toshiaki Matsui

  • UWB Bandpass Filters with Multi Notched Bands

    Keren Li;Daisuke Kurita;Toshiaki Matsui

  • Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

    M. Higashiwaki;N. Hirose;T. Matsui

  • Enhancement-Mode AlN/GaN HFETs Using Cat-CVD SiN

    M. Higashiwaki;T. Mimura;T. Matsui

  • Development of a direct ammonia-fueled molten hydroxide fuel cell

    Jun Yang;Hiroki Muroyama;Toshiaki Matsui;Koichi Eguchi

  • AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates

    Masataka Higashiwaki;Toshiaki Matsui

Frequent Co-Authors

Takashi Mimura
Takashi Mimura Fujitsu (Japan)
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Ronan Sauleau
Ronan Sauleau University of Rennes
Ryuji Kohno
Ryuji Kohno Yokohama National University
Jun Suda
Jun Suda Nagoya University
Yuji Awano
Yuji Awano Keio University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Hisanori Yamane
Hisanori Yamane Tohoku University
Toshio Hirai
Toshio Hirai Tohoku University
Masakazu Aono
Masakazu Aono National Institute for Materials Science

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Related Online Degrees & Career Pathways

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Balancing education with work commitments is a common challenge. Fortunately, online degree programs for working adults offer flexible schedules and accelerated formats, making it easier for engineers to advance their education without halting their careers.

Those interested in teaching or training roles within technical fields might consider programs like the best online master's for teaching. These degrees prepare graduates to design effective educational experiences tailored to technical subjects.

Additionally, the rise of competency based masters degree options provides a practical pathway for engineers to demonstrate skill mastery and apply learning directly to industry challenges, often at an accelerated pace.

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