Toshiaki Matsui

Best Publications

• Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

  Y. Yamashita;A. Endoh;K. Shinohara;K. Hikosaka

  401
  Citations

• An ultrawideband bandpass filter using broadside-coupled microstrip-coplanar waveguide structure

  Unknown

  215
  Citations

• Gaussian-beam antenna

  Toshiaki Matsui;Masahiro Kiyokawa

  190
  Citations

• Traffic monitoring system using vehicle identification

  Toshiaki Matsui;Harunobu Yuzawa;Akira Kobayashi

  173
  Citations

• AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

  Masataka Higashiwaki;Takashi Mimura;Takashi Mimura;Toshiaki Matsui

  170
  Citations

• 547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance

  K. Shinohara;Y. Yamashita;A. Endoh;I. Watanabe

  161
  Citations

• AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

  M. Higashiwaki;T. Matsui;T. Mimura

  159
  Citations

• Optical properties of Si-doped InN grown on sapphire (0001)

  T. Inushima;M. Higashiwaki;T. Matsui

  152
  Citations

• AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

  M. Higashiwaki;T. Mimura;T. Matsui

  129
  Citations

• Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

  Y. Yamashita;A. Endoh;K. Shinohara;M. Higashiwaki

  129
  Citations

• Structural, dielectric, and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates

  T. Matsui;H. Tanaka;N. Fujimura;T. Ito

  121
  Citations

• High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

  Masataka Higashiwaki;Toshiaki Matsui

  117
  Citations

• Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

  K. Shinohara;Y. Yamashita;A. Endoh;K. Hikosaka

  113
  Citations

• A new concept of focusing antennas using plane-parallel Fabry-Perot cavities with nonuniform mirrors

  R. Sauleau;P. Coquet;T. Matsui;J.-P. Daniel

  103
  Citations

• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

  Akira Endoh;Yoshimi Yamashita;Keiji Ikeda;Masataka Higashiwaki

  102
  Citations

• Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

  N. Onojima;M. Higashiwaki;J. Suda;T. Kimoto

  102
  Citations

• Open resonator for precision dielectric measurements in the 100 GHz band

  Unknown

  97
  Citations

• 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

  Masataka Higashiwaki;Takashi Mimura;Takashi Mimura;Toshiaki Matsui

  92
  Citations

• InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

  Masataka Higashiwaki;Toshiaki Matsui

  91
  Citations

• UWB Bandpass Filters with Multi Notched Bands

  Keren Li;Daisuke Kurita;Toshiaki Matsui

  91
  Citations

• Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

  M. Higashiwaki;N. Hirose;T. Matsui

  89
  Citations

• Enhancement-Mode AlN/GaN HFETs Using Cat-CVD SiN

  M. Higashiwaki;T. Mimura;T. Matsui

  88
  Citations

• Development of a direct ammonia-fueled molten hydroxide fuel cell

  Jun Yang;Hiroki Muroyama;Toshiaki Matsui;Koichi Eguchi

  81
  Citations

• AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates

  Masataka Higashiwaki;Toshiaki Matsui

  80
  Citations