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Arnulf Leuther

Arnulf Leuther

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
7206
World Ranking
5269
National Ranking
149

Overview

Arnulf Leuther is affiliated with the Fraunhofer Society in Germany. Their research primarily focuses on engineering and physics, particularly within the fields of electrical and electronic engineering and atomic and molecular physics. Their work spans topics related to radio frequency integrated circuit design, microwave engineering and waveguides, and semiconductor quantum structures and devices.

Leuther has contributed extensively to scientific literature, with a strong presence in prominent journals and conference proceedings. Frequent publication venues include:

  • IEEE Transactions on Terahertz Science and Technology
  • IEEE Microwave and Wireless Components Letters
  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Microwave and Wireless Technology Letters
  • IEEE Journal of Solid-State Circuits

Their recent papers cover a range of topics centered on power amplifiers, metamorphic high electron mobility transistor (mHEMT) technology, and millimeter-wave components. Notable publications include:

  • "Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology" (2020) in IEEE Transactions on Terahertz Science and Technology
  • "First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth" (2021) in IEEE Journal of Solid-State Circuits
  • "A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation" (2021) in IEEE Transactions on Microwave Theory and Techniques
  • "A 75-305-GHz Power Amplifier MMIC With 10-14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology" (2021) in IEEE Microwave and Wireless Components Letters
  • "Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology" (2020) in IEEE Microwave and Wireless Components Letters

Leuther collaborates regularly with various researchers, including:

  • Fabian Thome
  • A. Tessmann
  • Laurenz John
  • R. Quay
  • Felix Heinz

Their work intersects multiple subfields, with publications in:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Astronomy and Astrophysics
  • Aerospace Engineering
  • Condensed Matter Physics

Main research topics explored include:

  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology
  • Advanced Power Amplifier Design
  • Antenna Design and Analysis
  • Millimeter-Wave Propagation and Modeling

Best Publications

  • Wireless sub-THz communication system with high data rate

    S. Koenig;D. Lopez-Diaz;J. Antes;J. Antes;F. Boes;F. Boes

  • All Active MMIC-Based Wireless Communication at 220 GHz

    I. Kallfass;J. Antes;T. Schneider;F. Kurz

  • Towards MMIC-Based 300GHz Indoor Wireless Communication Systems

    Ingmar Kallfass;Iulia Dan;Sebastian Rey;Parisa Harati

  • ${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging

    Daniela Bleh;Markus Rosch;Michael Kuri;Alexander Dyck

  • Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna

    M Abbasi;S E Gunnarsson;N Wadefalk;R Kozhuharov

  • 35 nm metamorphic HEMT MMIC technology

    A. Leuther;A. Tessmann;H. Massler;R. Losch

  • 50 nm MHEMT Technology for G- and H-Band MMICs

    A. Leuther;A. Tessmann;M. Dammann;C. Schworer

  • Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

    A. Tessmann;I. Kallfass;A. Leuther;H. Massler

  • Metamorphic HEMT technology for low-noise applications

    A. Leuther;A. Tessmann;I. Kallfass;R. Losch

  • 35 nm mHEMT Technology for THz and ultra low noise applications

    Arnulf Leuther;Axel Tessmann;Michael Dammann;Hermann Massler

  • Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation

    M. Abbasi;R. Kozhuharov;C. Karnfelt;I. Angelov

  • A 220 GHz Single-Chip Receiver MMIC With Integrated Antenna

    S.E. Gunnarsson;N. Wadefalk;J. Svedin;S. Cherednichenko

  • A 300 GHz mHEMT amplifier module

    A. Tessmann;A. Leuther;V. Hurm;H. Massler

  • Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz

    A. Tessmann;A. Leuther;V. Hurm;I. Kallfass

  • 220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications

    A. Tessmann;A. Leuther;M. Kuri;H. Massler

  • A 600 GHz low-noise amplifier module

    A. Tessmann;A. Leuther;H. Massler;V. Hurm

  • 70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

    A. Leuther;A. Tessmann;M. Dammann;W. Reinert

  • Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz

    I. Kallfass;S. Diebold;H. Massler;S. Koch

  • G-band metamorphic HEMT-based frequency multipliers

    Y. Campos-Roca;C. Schworer;A. Leuther;M. Seelmann-Eggebert

  • Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

    Laurenz John;Axel Tessmann;Arnulf Leuther;Philipp Neininger

  • Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

    M. Dammann;A. Leuther;F. Benkhelifa;T. Feltgen

Frequent Co-Authors

Axel Tessmann
Axel Tessmann Fraunhofer Society
Ingmar Kallfass
Ingmar Kallfass University of Stuttgart
Michael Schlechtweg
Michael Schlechtweg Fraunhofer Institute for Applied Solid State Physics IAF
Oliver Ambacher
Oliver Ambacher University of Freiburg
Thomas Zwick
Thomas Zwick Karlsruhe Institute of Technology
Herbert Zirath
Herbert Zirath Chalmers University of Technology
Markus Walther
Markus Walther Friedrich Schiller University Jena
Juerg Leuthold
Juerg Leuthold ETH Zurich
Kari Halonen
Kari Halonen Aalto University
Wolfgang Freude
Wolfgang Freude Karlsruhe Institute of Technology

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