World's Best Scientists 2026 revealed!
Arnulf Leuther

Arnulf Leuther

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
7206
World Ranking
5269
National Ranking
148

Arnulf Leuther publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Arnulf Leuther sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 360 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Arnulf Leuther D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Arnulf Leuther sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Arnulf Leuther is affiliated with the Fraunhofer Society in Germany. Their research primarily focuses on engineering and physics, particularly within the fields of electrical and electronic engineering and atomic and molecular physics. Their work spans topics related to radio frequency integrated circuit design, microwave engineering and waveguides, and semiconductor quantum structures and devices.

Leuther has contributed extensively to scientific literature, with a strong presence in prominent journals and conference proceedings. Frequent publication venues include:

  • IEEE Transactions on Terahertz Science and Technology
  • IEEE Microwave and Wireless Components Letters
  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Microwave and Wireless Technology Letters
  • IEEE Journal of Solid-State Circuits

Their recent papers cover a range of topics centered on power amplifiers, metamorphic high electron mobility transistor (mHEMT) technology, and millimeter-wave components. Notable publications include:

  • "Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology" (2020) in IEEE Transactions on Terahertz Science and Technology
  • "First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth" (2021) in IEEE Journal of Solid-State Circuits
  • "A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation" (2021) in IEEE Transactions on Microwave Theory and Techniques
  • "A 75-305-GHz Power Amplifier MMIC With 10-14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology" (2021) in IEEE Microwave and Wireless Components Letters
  • "Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology" (2020) in IEEE Microwave and Wireless Components Letters

Leuther collaborates regularly with various researchers, including:

  • Fabian Thome
  • A. Tessmann
  • Laurenz John
  • R. Quay
  • Felix Heinz

Their work intersects multiple subfields, with publications in:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Astronomy and Astrophysics
  • Aerospace Engineering
  • Condensed Matter Physics

Main research topics explored include:

  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology
  • Advanced Power Amplifier Design
  • Antenna Design and Analysis
  • Millimeter-Wave Propagation and Modeling

Best Publications

  • Wireless sub-THz communication system with high data rate

    S. Koenig;D. Lopez-Diaz;J. Antes;J. Antes;F. Boes;F. Boes

  • All Active MMIC-Based Wireless Communication at 220 GHz

    I. Kallfass;J. Antes;T. Schneider;F. Kurz

  • Towards MMIC-Based 300GHz Indoor Wireless Communication Systems

    Ingmar Kallfass;Iulia Dan;Sebastian Rey;Parisa Harati

  • ${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging

    Daniela Bleh;Markus Rosch;Michael Kuri;Alexander Dyck

  • Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna

    M Abbasi;S E Gunnarsson;N Wadefalk;R Kozhuharov

  • 35 nm metamorphic HEMT MMIC technology

    A. Leuther;A. Tessmann;H. Massler;R. Losch

  • 50 nm MHEMT Technology for G- and H-Band MMICs

    A. Leuther;A. Tessmann;M. Dammann;C. Schworer

  • Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

    A. Tessmann;I. Kallfass;A. Leuther;H. Massler

  • Metamorphic HEMT technology for low-noise applications

    A. Leuther;A. Tessmann;I. Kallfass;R. Losch

  • 35 nm mHEMT Technology for THz and ultra low noise applications

    Arnulf Leuther;Axel Tessmann;Michael Dammann;Hermann Massler

  • Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation

    M. Abbasi;R. Kozhuharov;C. Karnfelt;I. Angelov

  • A 220 GHz Single-Chip Receiver MMIC With Integrated Antenna

    S.E. Gunnarsson;N. Wadefalk;J. Svedin;S. Cherednichenko

  • A 300 GHz mHEMT amplifier module

    A. Tessmann;A. Leuther;V. Hurm;H. Massler

  • Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz

    A. Tessmann;A. Leuther;V. Hurm;I. Kallfass

  • 220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications

    A. Tessmann;A. Leuther;M. Kuri;H. Massler

  • A 600 GHz low-noise amplifier module

    A. Tessmann;A. Leuther;H. Massler;V. Hurm

  • 70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

    A. Leuther;A. Tessmann;M. Dammann;W. Reinert

  • Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz

    I. Kallfass;S. Diebold;H. Massler;S. Koch

  • G-band metamorphic HEMT-based frequency multipliers

    Y. Campos-Roca;C. Schworer;A. Leuther;M. Seelmann-Eggebert

  • Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

    Laurenz John;Axel Tessmann;Arnulf Leuther;Philipp Neininger

  • Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

    M. Dammann;A. Leuther;F. Benkhelifa;T. Feltgen

Frequent Co-Authors

Axel Tessmann
Axel Tessmann Fraunhofer Society
Ingmar Kallfass
Ingmar Kallfass University of Stuttgart
Michael Schlechtweg
Michael Schlechtweg Fraunhofer Institute for Applied Solid State Physics IAF
Oliver Ambacher
Oliver Ambacher University of Freiburg
Thomas Zwick
Thomas Zwick Karlsruhe Institute of Technology
Herbert Zirath
Herbert Zirath Chalmers University of Technology
Markus Walther
Markus Walther Friedrich Schiller University Jena
Kari Halonen
Kari Halonen Aalto University
Juerg Leuthold
Juerg Leuthold ETH Zurich
Ricardo Amils
Ricardo Amils Spanish National Research Council

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