World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
6233
World Ranking
5096
National Ranking
1770

Overview

What is he best known for?

The fields of study he is best known for:

  • Amplifier
  • Electrical engineering
  • Optics

William R. Deal mostly deals with Optoelectronics, Amplifier, High-electron-mobility transistor, Integrated circuit and Electrical engineering. His research in Optoelectronics intersects with topics in Microstrip antenna, Frequency band and Dipole antenna. William R. Deal interconnects Optics, Radiation pattern and Omnidirectional antenna in the investigation of issues within Dipole antenna.

His Low-noise amplifier and RF power amplifier study are his primary interests in Amplifier. His studies in High-electron-mobility transistor integrate themes in fields like Noise figure, Coplanar waveguide, Gallium arsenide and Terahertz radiation. His studies in Monolithic microwave integrated circuit and Power dividers and directional couplers are all subfields of Electrical engineering research.

His most cited work include:

  • A new quasi-Yagi antenna for planar active antenna arrays (316 citations)
  • A broadband planar quasi-Yagi antenna (315 citations)
  • Microstrip-fed quasi-Yagi antenna with broadband characteristics (260 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Amplifier, High-electron-mobility transistor, Electrical engineering and Monolithic microwave integrated circuit. His study in Optoelectronics focuses on Integrated circuit in particular. The study incorporates disciplines such as Waveguide, Coplanar waveguide, Bandwidth and Power dividers and directional couplers in addition to Amplifier.

His High-electron-mobility transistor research includes themes of Indium phosphide, Submillimeter wave, Noise, Terahertz radiation and Noise figure. His Noise figure study deals with Optics intersecting with Coaxial antenna, Antenna factor, Antenna measurement, Dipole antenna and Radiation pattern. His work in Electrical engineering tackles topics such as Electronic engineering which are related to areas like Slot antenna.

He most often published in these fields:

  • Optoelectronics (56.30%)
  • Amplifier (52.59%)
  • High-electron-mobility transistor (49.63%)

What were the highlights of his more recent work (between 2015-2021)?

  • High-electron-mobility transistor (49.63%)
  • Terahertz radiation (23.70%)
  • Monolithic microwave integrated circuit (34.07%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include High-electron-mobility transistor, Terahertz radiation, Monolithic microwave integrated circuit, Electrical engineering and Optoelectronics. The concepts of his High-electron-mobility transistor study are interwoven with issues in Power consumption, Optics, Noise figure and Indium phosphide. Noise measurement is closely connected to Amplifier in his research, which is encompassed under the umbrella topic of Terahertz radiation.

In his research on the topic of Monolithic microwave integrated circuit, Sideband, Noise, Sensitivity and Image resolution is strongly related with Noise temperature. A large part of his Electrical engineering studies is devoted to Transmitter. Many of his studies on Optoelectronics apply to Signal as well.

Between 2015 and 2021, his most popular works were:

  • A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure (17 citations)
  • A Low-Power 670-GHz InP HEMT Receiver (15 citations)
  • 850 GHz Receiver and Transmitter Front-Ends Using InP HEMT (14 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Amplifier
  • Optics

His primary scientific interests are in Electrical engineering, High-electron-mobility transistor, Indium phosphide, Terahertz radiation and Monolithic microwave integrated circuit. His High-electron-mobility transistor study combines topics in areas such as Optoelectronics and Amplifier, Noise figure. His studies deal with areas such as Integrated circuit design and Noise measurement as well as Optoelectronics.

William R. Deal has included themes like Converters, Data rate and Bandwidth in his Amplifier study. His Terahertz radiation research incorporates elements of Signal, Sideband and Optical path. The various areas that William R. Deal examines in his Monolithic microwave integrated circuit study include Logic gate, Integrated circuit, Transmitter, Heterojunction bipolar transistor and Noise temperature.

Best Publications

  • A broadband planar quasi-Yagi antenna

    N. Kaneda;W.R. Deal;Yongxi Qian;R. Waterhouse

  • First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

    Xiaobing Mei;Wayne Yoshida;Mike Lange;Jane Lee

  • A new quasi-Yagi antenna for planar active antenna arrays

    W.R. Deal;N. Kaneda;J. Sor;Y. Qian

  • Microstrip-fed quasi-Yagi antenna with broadband characteristics

    Y. Qian;W.R. Deal;N. Kaneda;T. Itoh

  • Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

    R. Lai;X.B. Mei;W.R. Deal;W. Yoshida

  • THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

    W. Deal;X. B. Mei;K. M. K. H. Leong;V. Radisic

  • WAVEGUIDE AND SEMICONDUCTOR PACKAGING METHOD

    Zhang Chunbo;Ngo Peter;Akerling Gershon;Leong Kevin M

  • Integrated-antenna push-pull power amplifiers

    W.R. Deal;V. Radisic;Yongxi Qian;T. Itoh

  • Power Amplification at 0.65 THz Using InP HEMTs

    V. Radisic;K. M. K. H. Leong;Xiaobing Mei;S. Sarkozy

  • Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

    W. R. Deal;K. Leong;V. Radisic;S. Sarkozy

  • A uniplanar quasi-Yagi antenna with wide bandwidth and low mutual coupling characteristics

    Yongxi Qian;W.R. Deal;N. Kaneda;T. Itoh

  • Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

    W R Deal;X B Mei;V Radisic;K Leong

  • WR1.5 Silicon Micromachined Waveguide Components and Active Circuit Integration Methodology

    K. M. K. H. Leong;K. Hennig;Chunbo Zhang;R. N. Elmadjian

  • A 340–380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging

    K. Leong;W.R. Deal;V. Radisic;Xiao Bing Mei

  • A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz

    L. Samoska;W.R. Deal;G. Chattopadhyay;D. Pukala

  • A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

    Kevin M. K. H. Leong;Xiaobing Mei;Wayne Yoshida;Po-Hsin Liu

  • A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module

    V Radisic;W R Deal;K M K H Leong;X B Mei

  • Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers

    W.R. Deal;M. Biedenbender;Po-hsin Liu;J. Uyeda

  • Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology

    V. Radisic;X.B. Mei;W.R. Deal;W. Yoshida

  • A W-band InAs/AlSb low-noise/low-power amplifier

    W.R. Deal;R. Tsai;M.D. Lange;J.B. Boos

Frequent Co-Authors

Richard Lai
Richard Lai Northrop Grumman (United States)
Yongxi Qian
Yongxi Qian Microsemi (United States)
Goutam Chattopadhyay
Goutam Chattopadhyay Jet Propulsion Lab
Tatsuo Itoh
Tatsuo Itoh University of California, Los Angeles
Brian R. Bennett
Brian R. Bennett United States Naval Research Laboratory
Imran Mehdi
Imran Mehdi Jet Propulsion Lab
Ming C. Wu
Ming C. Wu University of California, Berkeley
R.B. Waterhouse
R.B. Waterhouse University of Melbourne

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