| Discipline name | D-Index | World Ranking | Current World Ranking | National Ranking | Current National Ranking | Publications | Citations |
|---|---|---|---|---|---|---|---|
| Electronics and Electrical Engineering | 37 | 5096 | 4892 | 1771 | 1656 | 162 | 6233 |
The chart shows the history of publications by William R. Deal between 1997 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. William R. Deal published across 25 years, from 1997 to 2021, averaging 6.5 papers a year. Output peaked at 19 publications in 2007. 6 of the 162 publications appeared in the last two years.
162 publications in total across all disciplines
| Year | Publications |
|---|---|
| 1997 | 1 |
| 1998 | 7 |
| 1999 | 11 |
| 2000 | 5 |
| 2001 | 1 |
| 2002 | 1 |
| 2003 | 2 |
| 2004 | 1 |
| 2005 | 5 |
| 2006 | 5 |
| 2007 | 19 |
| 2008 | 17 |
| 2009 | 11 |
| 2010 | 10 |
| 2011 | 6 |
| 2012 | 9 |
| 2013 | 3 |
| 2014 | 7 |
| 2015 | 12 |
| 2016 | 9 |
| 2017 | 9 |
| 2018 | 1 |
| 2019 | 4 |
| 2020 | 3 |
| 2021 | 3 |
| Total | 162 |
The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where William R. Deal sits on this spectrum.
This scientist: 162 publications — 18th percentile
18% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
| Publications | Scientists | This scientist |
|---|---|---|
| 34–53 | 24 | |
| 54–73 | 52 | |
| 74–93 | 114 | |
| 94–113 | 203 | |
| 114–133 | 269 | |
| 134–153 | 355 | |
| 154–173 | 403 | 162 |
| 174–193 | 445 | |
| 194–213 | 430 | |
| 214–233 | 431 | |
| 234–253 | 399 | |
| 254–273 | 366 | |
| 274–293 | 335 | |
| 294–313 | 300 | |
| 314–333 | 276 | |
| 334–353 | 250 | |
| 354–373 | 214 | |
| 374–393 | 187 | |
| 394–413 | 152 | |
| 414–433 | 169 | |
| 434–453 | 147 | |
| 454–473 | 111 | |
| 474–493 | 117 | |
| 494–513 | 103 | |
| 514–533 | 99 | |
| 534–553 | 92 | |
| 554–573 | 75 | |
| 574–593 | 58 | |
| 594–613 | 69 | |
| 614–633 | 50 | |
| 634–653 | 62 | |
| 654–673 | 54 | |
| 674–693 | 44 | |
| 694–713 | 37 | |
| 714–733 | 28 | |
| 734–753 | 26 | |
| 754–773 | 26 | |
| 774–793 | 19 | |
| 794–813 | 23 | |
| 814–833 | 20 | |
| 834–853 | 16 | |
| 854–873 | 20 | |
| 874–893 | 11 | |
| 894–913 | 11 | |
| 914–933 | 16 | |
| 934–953 | 13 | |
| 954–973 | 10 | |
| 974–993 | 11 | |
| 994–1,013 | 9 | |
| 1,014–1,033 | 9 | |
| 1,034–1,053 | 10 | |
| 1,054–1,064 | 6 | |
| 1,065+ | 99 |
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where William R. Deal sits on this spectrum.
This scientist: 37 D-Index — 27th percentile
27% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
| D-Index | Scientists | This scientist |
|---|---|---|
| 30 | 178 | |
| 31 | 257 | |
| 32 | 263 | |
| 33 | 262 | |
| 34 | 244 | |
| 35 | 236 | |
| 36 | 211 | |
| 37 | 220 | 37 |
| 38 | 214 | |
| 39 | 214 | |
| 40 | 205 | |
| 41 | 187 | |
| 42 | 194 | |
| 43 | 201 | |
| 44 | 155 | |
| 45 | 189 | |
| 46 | 148 | |
| 47 | 160 | |
| 48 | 134 | |
| 49 | 130 | |
| 50 | 141 | |
| 51 | 156 | |
| 52 | 108 | |
| 53 | 130 | |
| 54 | 112 | |
| 55 | 97 | |
| 56 | 111 | |
| 57 | 102 | |
| 58 | 108 | |
| 59 | 120 | |
| 60 | 103 | |
| 61 | 93 | |
| 62 | 92 | |
| 63 | 74 | |
| 64 | 77 | |
| 65 | 73 | |
| 66 | 64 | |
| 67 | 69 | |
| 68 | 60 | |
| 69 | 39 | |
| 70 | 57 | |
| 71 | 59 | |
| 72 | 46 | |
| 73 | 49 | |
| 74 | 38 | |
| 75 | 35 | |
| 76 | 32 | |
| 77 | 35 | |
| 78 | 31 | |
| 79 | 22 | |
| 80 | 34 | |
| 81 | 31 | |
| 82 | 34 | |
| 83 | 23 | |
| 84 | 18 | |
| 85 | 30 | |
| 86 | 19 | |
| 87 | 19 | |
| 88 | 20 | |
| 89 | 8 | |
| 90 | 17 | |
| 91 | 7 | |
| 92 | 14 | |
| 93 | 9 | |
| 94 | 15 | |
| 95 | 10 | |
| 96 | 12 | |
| 97 | 10 | |
| 98 | 10 | |
| 99 | 12 | |
| 100 | 16 | |
| 101 | 5 | |
| 102 | 7 | |
| 103 | 7 | |
| 104 | 8 | |
| 105 | 9 | |
| 106 | 13 | |
| 107 | 4 | |
| 108 | 5 | |
| 109 | 10 | |
| 110 | 8 | |
| 111+ | 96 |
William R. Deal mostly deals with Optoelectronics, Amplifier, High-electron-mobility transistor, Integrated circuit and Electrical engineering. His research in Optoelectronics intersects with topics in Microstrip antenna, Frequency band and Dipole antenna. William R. Deal interconnects Optics, Radiation pattern and Omnidirectional antenna in the investigation of issues within Dipole antenna.
His Low-noise amplifier and RF power amplifier study are his primary interests in Amplifier. His studies in High-electron-mobility transistor integrate themes in fields like Noise figure, Coplanar waveguide, Gallium arsenide and Terahertz radiation. His studies in Monolithic microwave integrated circuit and Power dividers and directional couplers are all subfields of Electrical engineering research.
His main research concerns Optoelectronics, Amplifier, High-electron-mobility transistor, Electrical engineering and Monolithic microwave integrated circuit. His study in Optoelectronics focuses on Integrated circuit in particular. The study incorporates disciplines such as Waveguide, Coplanar waveguide, Bandwidth and Power dividers and directional couplers in addition to Amplifier.
His High-electron-mobility transistor research includes themes of Indium phosphide, Submillimeter wave, Noise, Terahertz radiation and Noise figure. His Noise figure study deals with Optics intersecting with Coaxial antenna, Antenna factor, Antenna measurement, Dipole antenna and Radiation pattern. His work in Electrical engineering tackles topics such as Electronic engineering which are related to areas like Slot antenna.
His primary areas of investigation include High-electron-mobility transistor, Terahertz radiation, Monolithic microwave integrated circuit, Electrical engineering and Optoelectronics. The concepts of his High-electron-mobility transistor study are interwoven with issues in Power consumption, Optics, Noise figure and Indium phosphide. Noise measurement is closely connected to Amplifier in his research, which is encompassed under the umbrella topic of Terahertz radiation.
In his research on the topic of Monolithic microwave integrated circuit, Sideband, Noise, Sensitivity and Image resolution is strongly related with Noise temperature. A large part of his Electrical engineering studies is devoted to Transmitter. Many of his studies on Optoelectronics apply to Signal as well.
His primary scientific interests are in Electrical engineering, High-electron-mobility transistor, Indium phosphide, Terahertz radiation and Monolithic microwave integrated circuit. His High-electron-mobility transistor study combines topics in areas such as Optoelectronics and Amplifier, Noise figure. His studies deal with areas such as Integrated circuit design and Noise measurement as well as Optoelectronics.
William R. Deal has included themes like Converters, Data rate and Bandwidth in his Amplifier study. His Terahertz radiation research incorporates elements of Signal, Sideband and Optical path. The various areas that William R. Deal examines in his Monolithic microwave integrated circuit study include Logic gate, Integrated circuit, Transmitter, Heterojunction bipolar transistor and Noise temperature.
N. Kaneda;W.R. Deal;Yongxi Qian;R. Waterhouse
Xiaobing Mei;Wayne Yoshida;Mike Lange;Jane Lee
W.R. Deal;N. Kaneda;J. Sor;Y. Qian
Y. Qian;W.R. Deal;N. Kaneda;T. Itoh
R. Lai;X.B. Mei;W.R. Deal;W. Yoshida
W. Deal;X. B. Mei;K. M. K. H. Leong;V. Radisic
Zhang Chunbo;Ngo Peter;Akerling Gershon;Leong Kevin M
W.R. Deal;V. Radisic;Yongxi Qian;T. Itoh
V. Radisic;K. M. K. H. Leong;Xiaobing Mei;S. Sarkozy
W. R. Deal;K. Leong;V. Radisic;S. Sarkozy
Yongxi Qian;W.R. Deal;N. Kaneda;T. Itoh
W R Deal;X B Mei;V Radisic;K Leong
K. M. K. H. Leong;K. Hennig;Chunbo Zhang;R. N. Elmadjian
K. Leong;W.R. Deal;V. Radisic;Xiao Bing Mei
L. Samoska;W.R. Deal;G. Chattopadhyay;D. Pukala
Kevin M. K. H. Leong;Xiaobing Mei;Wayne Yoshida;Po-Hsin Liu
V Radisic;W R Deal;K M K H Leong;X B Mei
W.R. Deal;M. Biedenbender;Po-hsin Liu;J. Uyeda
V. Radisic;X.B. Mei;W.R. Deal;W. Yoshida
W.R. Deal;R. Tsai;M.D. Lange;J.B. Boos
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