World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4715
World Ranking
5396
National Ranking
783

Overview

Sen Huang is affiliated with the Chinese Academy of Sciences in China. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a strong focus on Electrical and Electronic Engineering as well as Condensed Matter Physics.

The scientist's work extensively covers topics related to semiconductor devices and materials. Main areas of research include GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, silicon carbide semiconductor technologies, semiconductor quantum structures and devices, advancements in semiconductor devices and circuit design, and microgrid control and optimization.

Sen Huang has contributed papers to various scientific venues, frequently publishing in:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • Journal of Semiconductors
  • IEEE Transactions on Power Electronics

Notable recent publications include:

  • "Stochastic optimal sizing of distributed energy resources for a cost-effective and resilient Microgrid," 2020, Energy
  • "Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy," 2020, IEEE Electron Device Letters
  • "Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess," 2020, IEEE Electron Device Letters
  • "Dynamic Interaction Analysis and Damping Control Strategy of Hybrid System With Grid-Forming and Grid-Following Control Modes," 2023, IEEE Transactions on Energy Conversion
  • "An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage," 2022, IEEE Electron Device Letters

The scientist collaborates frequently with several co-authors, including:

  • Xinhua Wang
  • Xinyu Liu
  • Wei Ke
  • Qimeng Jiang
  • Haibo Yin

Sen Huang's extensive publication record reflects research expertise in electrical and electronic engineering subfields, materials chemistry, and atomic and molecular physics aspects. Their work on GaN-based and other semiconductor technologies contributes to understanding and advancing device design, material properties, and energy conversion systems.

Best Publications

  • 600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

    Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang

  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

    Sen Huang;Qimeng Jiang;Shu Yang;Chunhua Zhou

  • Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron Mobility Transistors

    Sen Huang;Shu Yang;John Roberts;Kevin J. Chen

  • Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

    Chunhua Zhou;Qimeng Jiang;Sen Huang;K. J. Chen

  • High-Quality Interface in ${ m Al}_{2}{ m O}_{3}/{ m GaN}/{ m GaN}/{ m AlGaN}/{ m GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

    Sen Huang;Qimeng Jiang;Shu Yang;Zhikai Tang

  • Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

    L. Lu;Z. Y. Gao;B. Shen;F. J. Xu

  • Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess

    Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wang

  • High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN x Passivation

    Zhikai Tang;Sen Huang;Qimeng Jiang;Shenghou Liu

  • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

    Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng

  • Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

    Kui Dang;Ke Wei;Yue Hao;Jincheng Zhang

  • High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • Mapping of interface traps in high-performance Al 2 O 3 /AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology

    Kevin J. Chen;L. Yuan;M. J. Wang;H. Chen

  • Robust SiN x /AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN x Layer

    Xinhua Wang;Sen Huang;Yingkui Zheng;Ke Wei

  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

    Song Yang;Sen Huang;Jin Wei;Zheyang Zheng

  • Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

    Xinhua Wang;Sen Huang;Yingkui Zheng;Ke Wei

  • O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    Sen Huang;Xinyu Liu;Ke Wei;Guoguo Liu

  • High-Performance Enhancement-Mode Al 2 O 3 /AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

    Qi Zhou;Bowen Chen;Yang Jin;Sen Huang

  • Fabrication and Characterization of Enhancement-Mode High- $\kappa~{ m LaLuO}_{3}$ -AlGaN/GaN MIS-HEMTs

    Shu Yang;Sen Huang;Michael Schnee;Qing-Tai Zhao

  • Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures

    S. Huang;B. Shen;M. J. Wang;F. J. Xu

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Shu Yang
Shu Yang Zhejiang University
Qian Sun
Qian Sun Chinese Academy of Sciences
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Bo Zhang
Bo Zhang University of Electronic Science and Technology of China
B. G. Shen
B. G. Shen Chinese Academy of Sciences
Feng Xu
Feng Xu Xi'an Jiaotong University
Jürgen Schubert
Jürgen Schubert Forschungszentrum Jülich
Shengqiang Zhou
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf
Tadatomo Suga
Tadatomo Suga Meisei University

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