World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4715
World Ranking
5396
National Ranking
784

Sen Huang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sen Huang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 172 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sen Huang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sen Huang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sen Huang is affiliated with the Chinese Academy of Sciences in China. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a strong focus on Electrical and Electronic Engineering as well as Condensed Matter Physics.

The scientist's work extensively covers topics related to semiconductor devices and materials. Main areas of research include GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, silicon carbide semiconductor technologies, semiconductor quantum structures and devices, advancements in semiconductor devices and circuit design, and microgrid control and optimization.

Sen Huang has contributed papers to various scientific venues, frequently publishing in:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • Journal of Semiconductors
  • IEEE Transactions on Power Electronics

Notable recent publications include:

  • "Stochastic optimal sizing of distributed energy resources for a cost-effective and resilient Microgrid," 2020, Energy
  • "Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy," 2020, IEEE Electron Device Letters
  • "Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess," 2020, IEEE Electron Device Letters
  • "Dynamic Interaction Analysis and Damping Control Strategy of Hybrid System With Grid-Forming and Grid-Following Control Modes," 2023, IEEE Transactions on Energy Conversion
  • "An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage," 2022, IEEE Electron Device Letters

The scientist collaborates frequently with several co-authors, including:

  • Xinhua Wang
  • Xinyu Liu
  • Wei Ke
  • Qimeng Jiang
  • Haibo Yin

Sen Huang's extensive publication record reflects research expertise in electrical and electronic engineering subfields, materials chemistry, and atomic and molecular physics aspects. Their work on GaN-based and other semiconductor technologies contributes to understanding and advancing device design, material properties, and energy conversion systems.

Best Publications

  • 600-V Normally Off ${ m SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

    Zhikai Tang;Qimeng Jiang;Yunyou Lu;Sen Huang

  • Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

    Sen Huang;Qimeng Jiang;Shu Yang;Chunhua Zhou

  • Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron Mobility Transistors

    Sen Huang;Shu Yang;John Roberts;Kevin J. Chen

  • Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

    Chunhua Zhou;Qimeng Jiang;Sen Huang;K. J. Chen

  • High-Quality Interface in ${ m Al}_{2}{ m O}_{3}/{ m GaN}/{ m GaN}/{ m AlGaN}/{ m GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

    Sen Huang;Qimeng Jiang;Shu Yang;Zhikai Tang

  • Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

    L. Lu;Z. Y. Gao;B. Shen;F. J. Xu

  • Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess

    Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wang

  • High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN x Passivation

    Zhikai Tang;Sen Huang;Qimeng Jiang;Shenghou Liu

  • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

    Xinqiang Wang;Shitao Liu;Nan Ma;Li Feng

  • Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

    Kui Dang;Ke Wei;Yue Hao;Jincheng Zhang

  • High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

    Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang

  • Mapping of interface traps in high-performance Al 2 O 3 /AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques

    Shu Yang;Zhikai Tang;King-Yuen Wong;Yu-Syuan Lin

  • Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology

    Kevin J. Chen;L. Yuan;M. J. Wang;H. Chen

  • Robust SiN x /AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN x Layer

    Xinhua Wang;Sen Huang;Yingkui Zheng;Ke Wei

  • Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

    Song Yang;Sen Huang;Jin Wei;Zheyang Zheng

  • Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

    Xinhua Wang;Sen Huang;Yingkui Zheng;Ke Wei

  • O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    Sen Huang;Xinyu Liu;Ke Wei;Guoguo Liu

  • High-Performance Enhancement-Mode Al 2 O 3 /AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

    Qi Zhou;Bowen Chen;Yang Jin;Sen Huang

  • Fabrication and Characterization of Enhancement-Mode High- $\kappa~{ m LaLuO}_{3}$ -AlGaN/GaN MIS-HEMTs

    Shu Yang;Sen Huang;Michael Schnee;Qing-Tai Zhao

  • Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures

    S. Huang;B. Shen;M. J. Wang;F. J. Xu

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Shu Yang
Shu Yang Zhejiang University
Junfeng Li
Junfeng Li Chinese Academy of Sciences
Qian Sun
Qian Sun Chinese Academy of Sciences
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Bo Zhang
Bo Zhang University of Electronic Science and Technology of China
B. G. Shen
B. G. Shen Chinese Academy of Sciences
Feng Xu
Feng Xu Xi'an Jiaotong University
Shengqiang Zhou
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf
Tadatomo Suga
Tadatomo Suga Meisei University

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