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Materials Science

D-Index
67
Citations
16738
World Ranking
5095
National Ranking
1339

Research.com Recognitions

  • 2003 - Member of the National Academy of Sciences
  • 2002 - IEEE Medal of Honor For contributions to high-frequency transistors and hot-electron devices, especially heterostructure devices from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology.”
  • 2000 - Nobel Prize for basic work on information and communication technology; for developing semiconductor heterostructures used in high-speed- and opto-electronics
  • 1997 - Member of the National Academy of Engineering For conception of the semiconductor heterostructure transistor and laser, and for leadership in semiconductor materials technology.
  • 1972 - Fellow of American Physical Society (APS)
  • 1970 - IEEE Fellow For the invention of the drift transistor and other semiconductor devices.

Overview

Herbert Kroemer is affiliated with the University of California, Santa Barbara in the United States. Their contributions to semiconductor technology and high-frequency electronics have been recognized by multiple awards from prestigious institutions.

Kroemer's research mainly focuses on semiconductor heterostructures and devices that employ these materials. The work played a crucial role in the development of high-speed and optoelectronic components.

The scientist's awards include the Nobel Prize awarded in 2000 for basic work on information and communication technology and for developing semiconductor heterostructures used in high-speed and optoelectronics. In 2002, Kroemer received the IEEE Medal of Honor for contributions to high-frequency transistors and hot-electron devices, especially heterostructure devices, ranging from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology.

Other recognitions include:

  • Member of the National Academy of Sciences (2003)
  • Member of the National Academy of Engineering (1997), for conception of the semiconductor heterostructure transistor and laser, and leadership in semiconductor materials technology
  • Fellow of the American Physical Society (APS) since 1972
  • IEEE Fellow since 1970, recognized for the invention of the drift transistor and other semiconductor devices

Kroemer's work spans the fields of semiconductor physics, electrical engineering, and applied physics, specifically focusing on device concepts involving heterostructures that have enabled advancements in transistors and lasers. This foundation supports the development of technologies crucial to modern electronics and communication systems.

Best Publications

  • Heterostructure bipolar transistors and integrated circuits

    H. Kroemer

  • Polar-on-nonpolar epitaxy

    Herbert Kroemer

  • Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks

    Herbert Kroemer

  • Theory of a Wide-Gap Emitter for Transistors

    Herbert Kroemer

  • Measurement of isotype heterojunction barriers by C‐V profiling

    H. Kroemer;Wu‐Yi Chien;J. S. Harris;D. D. Edwall

  • The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review

    Herbert Kroemer

  • Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

    Gary Tuttle;Herbert Kroemer;John H. English

  • Theory of the energy-band lineup at an abrupt semiconductor heterojunction

    W. R. Frensley;H. Kroemer

  • Molecular‐beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

    J. M. Gaines;P. M. Petroff;H. Kroemer;R. J. Simes

  • Interface connection rules for effective-mass wave functions at an abrupt heterojunction between two different semiconductors

    Qi-Gao Zhu;Herbert Kroemer

  • Theory of the Gunn effect

    H. Kroemer

  • Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling

    M. A. Rao;E. J. Caine;H. Kroemer;S. I. Long

  • Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells

    Gary Tuttle;Herbert Kroemer;John H. English

  • Improved efficiency in semiconducting polymer light-emitting diodes

    D. Braun;A. J. Heeger;H. Kroemer

  • Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

    M. Reddy;S.C. Martin;A.C. Molnar;R.E. Muller

  • Heterostructure devices: A device physicist looks at interfaces

    Herbert Kroemer

  • Anomalous Andreev conductance in InAs-AlSb quantum well structures with Nb electrodes

    Chanh Nguyen;Herbert Kroemer;Evelyn L. Hu

  • Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

    C.‐K. Sun;G. Wang;J. E. Bowers;B. Brar

  • Metal-polymer schottky barriers on cast films of soluble poly(3-alkylthiophenes)

    H Tomozawa;D Braun;S Phillips;A.J Heeger

  • Heterostructure bipolar transistors: What should we build?

    Unknown

  • Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)

    Steve Wright;Herbert Kroemer

  • Serpentine superlattice quantum-wire arrays of (Al,Ga)As grown on vicinal GaAs substrates.

    Miller Ms;Weman H;Pryor Ce;Krishnamurthy M

Frequent Co-Authors

Evelyn L. Hu
Evelyn L. Hu Harvard University
Pierre Petroff
Pierre Petroff University of California, Santa Barbara
Jörg P. Kotthaus
Jörg P. Kotthaus Ludwig-Maximilians-Universität München
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Alfred Forchel
Alfred Forchel University of Würzburg
James L. Merz
James L. Merz University of Notre Dame
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
Klaus Ensslin
Klaus Ensslin ETH Zurich
Eicke R. Weber
Eicke R. Weber University of California, Berkeley

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