World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
5897
World Ranking
5503
National Ranking
1890

James L. Merz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James L. Merz sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 260 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

James L. Merz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James L. Merz sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2009 - Fellow of the Materials Research Society
  • 2007 - Fellow of the American Association for the Advancement of Science (AAAS)

Best Publications

  • Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy

    S. H. Xin;P. D. Wang;Aie Yin;C. Kim

  • Time‐resolved optical characterization of InGaAs/GaAs quantum dots

    G. Wang;S. Fafard;D. Leonard;J. E. Bowers

  • Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb

    J. L. Johnson;L. A. Samoska;A. C. Gossard;J. L. Merz

  • Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

    S. Fafard;D. Leonard;J. L. Merz;P. M. Petroff

  • Visible luminescence from semiconductor quantum dots in large ensembles

    R. Leon;S. Fafard;D. Leonard;J. L. Merz

  • Structural and optical properties of self‐assembled InGaAs quantum dots

    D. Leonard;S. Fafard;K. Pond;Y. H. Zhang

  • Quantum-dot cellular automata: Review and recent experiments (invited)

    G. L. Snider;A. O. Orlov;I. Amlani;X. Zuo

  • Quantum-dot cellular automata : computing with coupled quantum dots

    Wolfgang Porod;Craigs Lent;Gary H. Bernstein;Alexei O. Orlov

  • Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures

    H. F. Wong;D. L. Green;T. Y. Liu;D. G. Lishan

  • Quantum-Dot Cellular Automata:Line and Majority Logic Gate

    Gregory L. Snider;Alexei O. Orlov;Islamshah Amlani;Gary H. Bernstein

  • Dynamics of ripening of self-assembled II-VI semiconductor quantum dots

    S. Lee;I. Daruka;C. S. Kim;A. L. Barabási

  • New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface

    Y. R. Yuan;M. A. A. Pudensi;G. A. Vawter;J. L. Merz

  • GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence

    Grant Griffiths;Khalid Mohammed;Seshadri Subbana;Herbert Kroemer

  • Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers

    S. Y. Hu;S. W. Corzine;K.‐K. Law;D. B. Young

  • Quantum-dot cellular automata

    G. L. Snider;A. O. Orlov;I. Amlani;X. Zuo

  • Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification

    E. J. Caine;S. Subbanna;H. Kroemer;J. L. Merz

  • Asymmetric Stark shift in Al x In 1 − x As / Al y Ga 1 − y As self-assembled dots

    S. Raymond;J. P. Reynolds;J. L. Merz;S. Fafard

  • Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm

    A. F. Tsatsul’nikov;A. R. Kovsh;A. E. Zhukov;Yu. M. Shernyakov

  • Magnetoluminescence studies of InyAl1-yAs self-assembled quantum dots in AlxGa1-xAs matrices.

    P. D. Wang;J. L. Merz;S. Fafard;R. Leon

  • Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions

    Y. R. Yuan;K. Mohammed;M. A. A. Pudensi;James L. Merz

Frequent Co-Authors

Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Bo Monemar
Bo Monemar Linköping University
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
Pierre Petroff
Pierre Petroff University of California, Santa Barbara
Evelyn L. Hu
Evelyn L. Hu Harvard University
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
Gregory L. Snider
Gregory L. Snider University of Notre Dame
Herbert Kroemer
Herbert Kroemer University of California, Santa Barbara
John E. Bowers
John E. Bowers University of California, Santa Barbara
Gary H. Bernstein
Gary H. Bernstein University of Notre Dame

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Related Online Degrees & Career Pathways

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Additionally, for those needing flexible enrollment options, online colleges with frequent start dates allow students to begin their studies sooner without waiting for traditional semester start times. This flexibility helps accelerate career advancement in the rapidly evolving fields of electronics and electrical engineering.

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