François M. d'Heurle

Overview

Best Publications

• Kinetics of formation of silicides: A review

  F. M. d'Heurle;P. Gas

  563
  Citations

• Nucleation of a new phase from the interaction of two adjacent phases: Some silicides

  F. M. d'Heurle

  560
  Citations

• Towards implementation of a nickel silicide process for CMOS technologies

  C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral

  496
  Citations

• Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering

  F.M. D'Heurle;F.M. D'Heurle;J.M.E. Harper

  390
  Citations

• Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

  F. d’Heurle;C. S. Petersson;J. E. E. Baglin;S. J. La Placa

  337
  Citations

• Formation of thin films of CoSi2: Nucleation and diffusion mechanisms

  F.M. d'Heurle;C.S. Petersson

  288
  Citations

• The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) and p‐type silicon

  H. Norde;J. de Sousa Pires;F. d’Heurle;F. Pesavento

  235
  Citations

• The formation of silicides from thin films of some rare-earth metals

  J. E. Baglin;F. M. d’Heurle;C. S Petersson

  211
  Citations

• Diffusion marker experiments with rare‐earth silicides and germanides: Relative mobilities of the two atom species

  J. E. E. Baglin;F. M. d’Heurle;C. S. Petersson

  193
  Citations

• Oxidation mechanisms in WSi2 thin films

  S. Zirinsky;W. Hammer;F. d’Heurle;J. Baglin

  174
  Citations

• Diffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films

  F. d’Heurle;S. Petersson;L. Stolt;B. Strizker

  168
  Citations

• Formation of iridium silicides from Ir thin films on Si substrates

  S. Petersson;J. Baglin;W. Hammer;F. d’Heurle

  160
  Citations

• Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

  C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

  159
  Citations

• Electromigration and failure in electronics: An introduction

  Unknown

  156
  Citations

• Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

  R. W. Mann;G. L. Miles;T. A. Knotts;D. W. Rakowski

  151
  Citations

• High Temperature Process Limitation on TiSi2

  C. Y. Ting;F. M. d'Heurle;S. S. Iyer;P. M. Fryer

  144
  Citations

• Diffusion versus oxidation rates in silicon‐germanium alloys

  J. Eugène;F. K. LeGoues;V. P. Kesan;S. S. Iyer

  129
  Citations

• The formation of Cu3Si: Marker experiments

  L. Stolt;F.M. D'Heurle

  129
  Citations

• Room‐temperature oxidation of silicon catalyzed by Cu3Si

  J. M. E. Harper;A. Charai;L. Stolt;F. M. d’Heurle

  124
  Citations

• The effect of copper additions on electromigration in aluminum thin films

  Unknown

  120
  Citations

• Anomalous large grains in alloyed aluminum thin films I. Secondary grain growth in aluminum-copper films

  A. Gangulee;F.M. D'Heurle

  104
  Citations

• Oxidation of silicon–germanium alloys. I. An experimental study

  P.-E. Hellberg;S.-L. Zhang;F. M. d’Heurle;C. S. Petersson

  103
  Citations