François M. d'Heurle

François M. d'Heurle publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where François M. d'Heurle sits on this spectrum.

François M. d'Heurle D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where François M. d'Heurle sits on this spectrum.

Overview

Best Publications

• Kinetics of formation of silicides: A review

  F. M. d'Heurle;P. Gas

  563
  Citations

• Nucleation of a new phase from the interaction of two adjacent phases: Some silicides

  F. M. d'Heurle

  560
  Citations

• Towards implementation of a nickel silicide process for CMOS technologies

  C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral

  496
  Citations

• Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering

  F.M. D'Heurle;F.M. D'Heurle;J.M.E. Harper

  390
  Citations

• Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

  F. d’Heurle;C. S. Petersson;J. E. E. Baglin;S. J. La Placa

  337
  Citations

• Formation of thin films of CoSi2: Nucleation and diffusion mechanisms

  F.M. d'Heurle;C.S. Petersson

  288
  Citations

• The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) and p‐type silicon

  H. Norde;J. de Sousa Pires;F. d’Heurle;F. Pesavento

  235
  Citations

• The formation of silicides from thin films of some rare-earth metals

  J. E. Baglin;F. M. d’Heurle;C. S Petersson

  211
  Citations

• Diffusion marker experiments with rare‐earth silicides and germanides: Relative mobilities of the two atom species

  J. E. E. Baglin;F. M. d’Heurle;C. S. Petersson

  193
  Citations

• Oxidation mechanisms in WSi2 thin films

  S. Zirinsky;W. Hammer;F. d’Heurle;J. Baglin

  174
  Citations

• Diffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films

  F. d’Heurle;S. Petersson;L. Stolt;B. Strizker

  168
  Citations

• Formation of iridium silicides from Ir thin films on Si substrates

  S. Petersson;J. Baglin;W. Hammer;F. d’Heurle

  160
  Citations

• Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

  C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

  159
  Citations

• Electromigration and failure in electronics: An introduction

  Unknown

  156
  Citations

• Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

  R. W. Mann;G. L. Miles;T. A. Knotts;D. W. Rakowski

  151
  Citations

• High Temperature Process Limitation on TiSi2

  C. Y. Ting;F. M. d'Heurle;S. S. Iyer;P. M. Fryer

  144
  Citations

• Diffusion versus oxidation rates in silicon‐germanium alloys

  J. Eugène;F. K. LeGoues;V. P. Kesan;S. S. Iyer

  129
  Citations

• The formation of Cu3Si: Marker experiments

  L. Stolt;F.M. D'Heurle

  129
  Citations

• Room‐temperature oxidation of silicon catalyzed by Cu3Si

  J. M. E. Harper;A. Charai;L. Stolt;F. M. d’Heurle

  124
  Citations

• The effect of copper additions on electromigration in aluminum thin films

  Unknown

  120
  Citations

• Anomalous large grains in alloyed aluminum thin films I. Secondary grain growth in aluminum-copper films

  A. Gangulee;F.M. D'Heurle

  104
  Citations

• Oxidation of silicon–germanium alloys. I. An experimental study

  P.-E. Hellberg;S.-L. Zhang;F. M. d’Heurle;C. S. Petersson

  103
  Citations