World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
56
Citations
10646
World Ranking
8290
National Ranking
2039

Eugene A. Irene publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Eugene A. Irene sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 284 publications — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Eugene A. Irene D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Eugene A. Irene sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Eugene A. Irene is affiliated with the University of North Carolina at Chapel Hill in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a strong emphasis on Electrical and Electronic Engineering as well as Atomic and Molecular Physics and Optics. The scope of their work also includes Biomedical Engineering and Computational Mechanics.

The scientist's research topics cover a range of specialized areas related to semiconductor technology and optical phenomena. These topics include:

  • Semiconductor materials and devices
  • Advanced Surface Polishing Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Surface and Thin Film Phenomena
  • Photonic and Optical Devices
  • Mechanical and Optical Resonators

Eugene A. Irene has contributed to multiple publications, predominantly appearing in UNC Libraries. Recent papers authored or co-authored by them include:

  • Limiting Si/SiO2 interface roughness resulting from thermal oxidation (2021, UNC Libraries)
  • Novel charge integrating pulsed I (V) technique: A measurement of Fowler-Nordheim currents through thin SiO2 films (2021, UNC Libraries)
  • A study of nonlinear reflection and optical switching in indium antimonide (2021, UNC Libraries)
  • Surface characterization of absorbing polymer films deposited on transparent glasses (2021, UNC Libraries)

Their frequent collaborators include several researchers known for work in similar technical areas, listed as:

  • Luhua Lai
  • Jordan C. Poler
  • W. S. Woodward
  • S. T. Feng
  • Débora Gonçalves

Throughout their career, Eugene A. Irene has focused on understanding phenomena at the interfaces of materials and the behavior of thin films, semiconductor devices, and optical materials. This work is reflected in both their publication record and the specialized fields of study associated with their research activities.

Best Publications

  • Handbook of Ellipsometry

    Harland G. Tompkins;Eugene A. Irene

  • Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy

    G. Lucovsky;M. J. Mantini;J. K. Srivastava;E. A. Irene

  • Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results

    Hisham Z. Massoud;James D. Plummer;Eugene A. Irene

  • Electron trapping in SiO2 at 295 and 77 °K

    D. R. Young;E. A. Irene;D. J. DiMaria;R. F. De Keersmaecker

  • A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures

    E. A. Irene;E. Tierney;J. Angilello

  • Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms

    Hisham Z. Massoud;James D. Plummer;Eugene A. Irene

  • SILICON OXIDATION STUDIES- SOME ASPECTS OF THE INITIAL OXIDATION REGIME

    E. A. Irene

  • Applications of spectroscopic ellipsometry to microelectronics

    E.A. Irene

  • Imaging the incipient electrochemical oxidation of highly oriented pyrolytic graphite

    Charles A. Goss;Jay C. Brumfield;Eugene A. Irene;Royce W. Murray

  • Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide

    J. T. Fitch;G. Lucovsky;E. Kobeda;E. A. Irene

  • Silicon Oxidation Studies: The Role of H 2 O

    E. A. Irene;R. Ghez

  • Preparation and Some Properties of Chemically Vapor‐Deposited Si‐Rich SiO2 and Si3 N 4 Films

    D. Dong;E. A. Irene;D. R. Young

  • Visible light emission from thin films containing Si, O, N, and H

    B. H. Augustine;E. A. Irene;Y. J. He;K. J. Price

  • Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation

    Eugene A. Irene;H. Z. Massoud;E. Tierney

  • Silicon oxidation studies: A revised model for thermal oxidation

    E. A. Irene

  • Incipient electrochemical oxidation of highly oriented pyrolytic graphite : correlation between surface blistering and electrolyte anion intercalation

    Kevin W. Hathcock;Jay C. Brumfield;Charles A. Goss;Eugene A. Irene

  • Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

    O. Auciello;W. Fan;B. Kabius;S. Saha

  • Fundamentals and applications of spectroscopic ellipsometry

    Débora Gonçalves;Eugene A. Irene

  • A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si

    Unknown

  • Magnesium oxide as a candidate high-κ gate dielectric

    L. Yan;C.M. Lopez;R.P. Shrestha;E.A. Irene

  • Residual stress in silicon nitride films

    E. A. Irene

  • Electronic Properties of Materials

    Eugene A. Irene

Frequent Co-Authors

Orlando Auciello
Orlando Auciello The University of Texas at Dallas
Alan R. Krauss
Alan R. Krauss Argonne National Laboratory
Royce W. Murray
Royce W. Murray University of North Carolina at Chapel Hill
Maria Losurdo
Maria Losurdo National Research Council (CNR)
Giovanni Bruno
Giovanni Bruno National Research Council (CNR)
François M. d'Heurle
François M. d'Heurle IBM (United States)
Martin Saunders
Martin Saunders Yale University
Jagdish Narayan
Jagdish Narayan North Carolina State University
Wei-Kan Chu
Wei-Kan Chu University of Houston
James D. Plummer
James D. Plummer Stanford University

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