2026 Eugene A. Irene: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	56	8292	2041	284	10646

Discipline name

D-Index

World Ranking

National Ranking

Publications

Citations

Materials Science

8292

2041

284

10646

Overview

Eugene A. Irene is affiliated with the University of North Carolina at Chapel Hill in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a strong emphasis on Electrical and Electronic Engineering as well as Atomic and Molecular Physics and Optics. The scope of their work also includes Biomedical Engineering and Computational Mechanics.

The scientist's research topics cover a range of specialized areas related to semiconductor technology and optical phenomena. These topics include:

Semiconductor materials and devices
Advanced Surface Polishing Techniques
Integrated Circuits and Semiconductor Failure Analysis
Advancements in Semiconductor Devices and Circuit Design
Surface and Thin Film Phenomena
Photonic and Optical Devices
Mechanical and Optical Resonators

Eugene A. Irene has contributed to multiple publications, predominantly appearing in UNC Libraries. Recent papers authored or co-authored by them include:

Limiting Si/SiO2 interface roughness resulting from thermal oxidation (2021, UNC Libraries)
Novel charge integrating pulsed I (V) technique: A measurement of Fowler-Nordheim currents through thin SiO2 films (2021, UNC Libraries)
A study of nonlinear reflection and optical switching in indium antimonide (2021, UNC Libraries)
Surface characterization of absorbing polymer films deposited on transparent glasses (2021, UNC Libraries)

Their frequent collaborators include several researchers known for work in similar technical areas, listed as:

Luhua Lai
Jordan C. Poler
W. S. Woodward
S. T. Feng
Débora Gonçalves

Throughout their career, Eugene A. Irene has focused on understanding phenomena at the interfaces of materials and the behavior of thin films, semiconductor devices, and optical materials. This work is reflected in both their publication record and the specialized fields of study associated with their research activities.

Best Publications

Handbook of Ellipsometry

Harland G. Tompkins;Eugene A. Irene

1219
Citations
Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy

G. Lucovsky;M. J. Mantini;J. K. Srivastava;E. A. Irene

545
Citations
Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results

Hisham Z. Massoud;James D. Plummer;Eugene A. Irene

467
Citations
Electron trapping in SiO2 at 295 and 77 °K

D. R. Young;E. A. Irene;D. J. DiMaria;R. F. De Keersmaecker

312
Citations
A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures

E. A. Irene;E. Tierney;J. Angilello

298
Citations
Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms

Hisham Z. Massoud;James D. Plummer;Eugene A. Irene

206
Citations
SILICON OXIDATION STUDIES- SOME ASPECTS OF THE INITIAL OXIDATION REGIME

E. A. Irene

194
Citations
Applications of spectroscopic ellipsometry to microelectronics

E.A. Irene

193
Citations
Imaging the incipient electrochemical oxidation of highly oriented pyrolytic graphite

Charles A. Goss;Jay C. Brumfield;Eugene A. Irene;Royce W. Murray

177
Citations
Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide

J. T. Fitch;G. Lucovsky;E. Kobeda;E. A. Irene

160
Citations
Silicon Oxidation Studies: The Role of H 2 O

E. A. Irene;R. Ghez

157
Citations
Preparation and Some Properties of Chemically Vapor‐Deposited Si‐Rich SiO2 and Si3 N 4 Films

D. Dong;E. A. Irene;D. R. Young

154
Citations
Visible light emission from thin films containing Si, O, N, and H

B. H. Augustine;E. A. Irene;Y. J. He;K. J. Price

153
Citations
Silicon Oxidation Studies: Silicon Orientation Effects on Thermal Oxidation

Eugene A. Irene;H. Z. Massoud;E. Tierney

139
Citations
Silicon oxidation studies: A revised model for thermal oxidation

E. A. Irene

136
Citations
Incipient electrochemical oxidation of highly oriented pyrolytic graphite : correlation between surface blistering and electrolyte anion intercalation

Kevin W. Hathcock;Jay C. Brumfield;Charles A. Goss;Eugene A. Irene

122
Citations
Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

O. Auciello;W. Fan;B. Kabius;S. Saha

118
Citations
Fundamentals and applications of spectroscopic ellipsometry

Débora Gonçalves;Eugene A. Irene

117
Citations
A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si

Unknown

115
Citations
Magnesium oxide as a candidate high-κ gate dielectric

L. Yan;C.M. Lopez;R.P. Shrestha;E.A. Irene

110
Citations
Residual stress in silicon nitride films

E. A. Irene

109
Citations
Electronic Properties of Materials

Eugene A. Irene

0
Citations