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Electronics and Electrical Engineering

D-Index
38
Citations
6973
World Ranking
4857
National Ranking
1698

Overview

Scott R. Summerfelt is affiliated with Texas Instruments in the United States, where research and development activities are conducted primarily in the field of embedded non-volatile memory technologies. Their work includes contributions to areas related to ferroelectric memory development, specifically focusing on materials such as Pb(ZrxTi1−x)O3.

Their recent publication is titled "A Framework for Embedded Non-Volatile Memory Development: Examples from Pb(ZrxTi1−x)O3 Ferroelectric Memory Development at Texas Instruments", published in 2025 in the journal Electronics. This paper addresses frameworks in memory technology development within embedded systems contexts.

Frequent co-authors in their research include:

  • T. S. Moise
  • J. Rodriguez

Their work has appeared in the following publication venue:

  • Electronics

Best Publications

  • Hardmask designs for dry etching FeRAM capacitor stacks

    Theodore Moise;Stephen R. Gilbert;Scott R. Summerfelt;Guoqiang Xing

  • Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films: A Review of Recent Advances

    Si Joon Kim;Jaidah Mohan;Scott R. Summerfelt;Jiyoung Kim

  • Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

    Si Joon Kim;Dushyant Narayan;Jae-Gil Lee;Jaidah Mohan

  • High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

    A.I. Kingon;S.K. Streiffer;C. Basceri;S.R. Summerfelt

  • A conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes

    Scott R. Summerfelt

  • Integrated circuit and method

    Theodore S. Moise;Guoqiang Xing;Mark Visokay;Justin F. Gaynor

  • High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers

    Scott R. Summerfelt;Howard R. Beratan;Bruce E. Gnade

  • Contact etching containing no hydrogen for forming ferroelectric capacitor

    Shin Guojian;Kabari Rahim;Tomoyuki Sakoda;Maa Shawmin

  • Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

    S. Mueller;S. R. Summerfelt;J. Muller;U. Schroeder

  • Electrode interface for high-dielectric-constant materials

    Scott R. Summerfelt;Howard Roy Beratan

  • Method of forming conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes

    Scott R. Summerfelt

  • FeRAM capacitor stack etch

    Francis G. Celii;Scott R. Summerfelt;Mahesh Thakre

  • Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

    Si Joon Kim;Jaidah Mohan;Jaebeom Lee;Joy S. Lee

  • A 64-Mb embedded FRAM utilizing a 130-nm 5LM Cu/FSG logic process

    H.P. McAdams;R. Acklin;T. Blake;Xiao-Hong Du

  • Observation of the early stages of growth of superconducting thin films by transmission electron microscopy

    M. Grant Norton;Lisa A. Tietz;Scott R. Summerfelt;C. Barry Carter

  • Pre-oxidizing high-dielectric-constant material electrodes

    Yasushiro Nishioka;Scott R. Summerfelt;Kyung-ho Park;Pijush Bhattacharya

  • Surface preparation for the heteroepitactic growth of ceramic thin films

    M. Grant Norton;Scott R. Summerfelt;C. Barry Carter

  • Reliability properties of low-voltage ferroelectric capacitors and memory arrays

    J.A. Rodriguez;K. Remack;K. Boku;K.R. Udayakumar

  • FABRICATING HIGH-DIELECTRIC CONSTANT OXIDES ON SEMICONDUCTORS USING GERMANIUM BUFFER LAYER

    Summerfelt Scott R

  • An 8MHz 75µA/MHz zero-leakage non-volatile logic-based Cortex-M0 MCU SoC exhibiting 100% digital state retention at V DD =0V with <400ns wakeup and sleep transitions

    S. C. Bartling;S. Khanna;M. P. Clinton;S. R. Summerfelt

Frequent Co-Authors

Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Bruce E. Gnade
Bruce E. Gnade The University of Texas at Dallas
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Paul C. McIntyre
Paul C. McIntyre Stanford University
Mark R. Visokay
Mark R. Visokay Texas Instruments (United States)
Angus I. Kingon
Angus I. Kingon Brown University
M.-A. Nicolet
M.-A. Nicolet California Institute of Technology
Rainer Waser
Rainer Waser RWTH Aachen University
S. K. Streiffer
S. K. Streiffer Argonne National Laboratory
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology

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