World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
56
Citations
14699
World Ranking
8153
National Ranking
2009

Bruce E. Gnade publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bruce E. Gnade sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 352 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bruce E. Gnade D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bruce E. Gnade sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Bruce E. Gnade is affiliated with The University of Texas at Dallas in the United States. Their research primarily focuses on engineering, with a significant emphasis on electrical and electronic engineering. This work extends into subfields such as condensed matter physics, materials chemistry, atomic and molecular physics, optics, and biomedical engineering.

Their scientific contributions cover multiple topics within semiconductor technology and device performance. Key areas of study include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • GaN-based semiconductor devices and materials
  • Electrostatic discharge in electronics
  • Integrated circuits and semiconductor failure analysis
  • Silicon nanostructures and photoluminescence
  • Semiconductor materials and interfaces

Bruce E. Gnade has published in various academic venues, reflecting the diverse nature of their studies. The most frequent publication outlets include:

  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • IEEE Transactions on Nuclear Science
  • SSRN Electronic Journal
  • Communications Physics
  • 2021 22nd International Vacuum Electronics Conference (IVEC)

Among the recent papers authored or co-authored by Bruce E. Gnade are:

  • "Adaptive optical beam steering and tuning system based on electrowetting driven fluidic rotor," 2020, Communications Physics
  • "Heavy-Ion Radiation Effects in AlGaN/GaN High-Electron-Mobility Transistors," 2024, IEEE Transactions on Nuclear Science
  • "Characterization and Simulation of Terrestrial Neutron-Induced Destructive Single-Event Effects in Gallium Nitride (GaN) Power Devices," 2023, IEEE Transactions on Nuclear Science
  • "Failure Mechanism of Large Scale Field Emission Array," 2021, 2021 22nd International Vacuum Electronics Conference (IVEC)
  • "Effects of gases on the field emission performance of silicon gated field emitter array," 2023, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Their frequent collaborators include Tao Zheng, Akintunde I. Akinwande, Reza Farsad Asadi, Girish Rughoobur, and Han Gao. These partnerships have contributed to multidisciplinary research outputs, particularly in semiconductor device performance and failure mechanisms.

Best Publications

  • Mechanisms behind green photoluminescence in ZnO phosphor powders

    K. Vanheusden;W. L. Warren;C. H. Seager;D. R. Tallant

  • Fabrication of silver vanadium oxide and V2O5 nanowires for electrochromics.

    Chunrong Xiong;Ali E. Aliev;Bruce Gnade;Kenneth J. Balkus

  • Cowpea Mosaic Virus as a Scaffold for 3-D Patterning of Gold Nanoparticles

    Amy Szuchmacher Blum;Carissa M. Soto;Charmaine D. Wilson;John D. Cole

  • High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers

    Scott R. Summerfelt;Howard R. Beratan;Bruce E. Gnade

  • Interconnect structure with an integrated low density dielectric

    Robert H. Havemann;Shin-puu Jeng;Bruce E. Gnade;Chih-Chen Cho

  • Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

    S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch

  • FED up with fat tubes

    B.R. Chalamala;Yi Wei;B.E. Gnade

  • A non-doped phosphorescent organic light-emitting device with above 31% external quantum efficiency

    Qi Wang;Qi Wang;Qi Wang;Iain W. H. Oswald;Xiaolong Yang;Guijiang Zhou

  • Exfoliated and intercalated polyamide-imide nanocomposites with montmorillonite

    Ajit Ranade;Nandika Anne D'Souza;Bruce E Gnade

  • Method for fabricating a DMD spatial light modulator with a hardened hinge

    Douglas A. Webb;Bruce Gnade

  • Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

    Duo Mao;Manuel Angel Quevedo Quevedo-López;Harvey J. Stiegler;Bruce E. Gnade

  • Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates

    Douglas M. Smith;Gregory P. Johnston;William C. Ackerman;Richard A. Stoltz

  • EFFECT OF GROWTH CONDITIONS ON SURFACE MORPHOLOGY AND PHOTOELECTRIC WORK FUNCTION CHARACTERISTICS OF IRIDIUM OXIDE THIN FILMS

    Babu R. Chalamala;Yi Wei;Robert H. Reuss;Sanjeev Aggarwal

  • The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg,Cd)Te

    H. F. Schaake;J. H. Tregilgas;J. D. Beck;M. A. Kinch

  • Anode plate for flat panel display having integrated getter

    Robert M. Wallace;Bruce E. Gnade;Chi-Cheong Shen;Jules D. Levine

  • Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

    Tim S. Böscke;Shrinivas Govindarajan;Paul D. Kirsch;Puiyee Y. Hung

  • Exciton and Polaron Quenching in Doping‐Free Phosphorescent Organic Light‐Emitting Diodes from a Pt(II)‐Based Fast Phosphor

    Qi Wang;Iain W. H. Oswald;Michael R. Perez;Huiping Jia

  • Low density, high porosity material as gate dielectric for field emission device

    Bruce Gnade;Chih-Chen Cho;Jules D. Levine

  • Poly(3-hexylthiophene)-CdSe Quantum Dot Bulk Heterojunction Solar Cells: Influence of the Functional End-Group of the Polymer

    Kumaranand Palaniappan;John W. Murphy;Nadia Khanam;Julius Horvath

  • Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties

    Huiping Jia;Srinivas Gowrisanker;Gaurang K. Pant;Robert M. Wallace

  • Hafnium interdiffusion studies from hafnium silicate into silicon

    M. Quevedo-Lopez;M. El-Bouanani;S. Addepalli;J. L. Duggan

Frequent Co-Authors

Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Kenneth J. Balkus
Kenneth J. Balkus The University of Texas at Dallas
Kyeongjae Cho
Kyeongjae Cho The University of Texas at Dallas
Scott R. Summerfelt
Scott R. Summerfelt Texas Instruments (United States)
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Mark R. Visokay
Mark R. Visokay Texas Instruments (United States)
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Mohammad A. Omary
Mohammad A. Omary University of North Texas

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