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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5945
World Ranking
4722
National Ranking
1657

Overview

Mark R. Visokay is affiliated with Texas Instruments in the United States. Their professional contributions are associated with this organization within the country.

There are no records of recent papers, co-authors, or frequent publication venues connected to Mark R. Visokay. Likewise, there are no data entries indicating book publications, main or subfields of study, or specific main topics of research work.

No awards have been documented for this individual.

Best Publications

  • Application of HfSiON as a gate dielectric material

    M. R. Visokay;J. J. Chambers;A. L. P. Rotondaro;A. Shanware

  • Effect of nitrogen on band alignment in HfSiON gate dielectrics

    S. Sayan;N. V. Nguyen;J. Ehrstein;J. J. Chambers

  • Annealing of high-k dielectric materials

    Antonio L. P. Rotondaro;Mark R. Visokay;Luigi Colombo

  • Process for manufacturing dual work function metal gates in a microelectronics device

    Luigi Colombo;James J. Chambers;Mark R. Visokay

  • Integrated circuit and method

    Theodore S. Moise;Guoqiang Xing;Mark Visokay;Justin F. Gaynor

  • Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing

    Mark Robert Visokay;Antonio Luis Pacheco Rotondaro;Luigi Colombo

  • Gate structure and method

    Mark R. Visokay;Antonio L. P. Rotondaro;Luigi Colombo

  • Metal gate MOS transistors and methods for making the same

    Mark Visokay;Luigi Colombo;James J. Chambers

  • Advanced CMOS transistors with a novel HfSiON gate dielectric

    A.L.P. Rotondaro;M.R. Visokay;J.J. Chambers;A. Shanware

  • Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

    B. C. Hendrix;A. S. Borovik;C. Xu;J. F. Roeder

  • Gate dielectric and method

    Mark R. Visokay;Antonio L. P. Rotondaro;Luigi Colombo

  • INTERFACE LAYER GROWTH FOR HIGH-K GATE DIELECTRIC AT HIGH TEMPERATURE

    Colombo Luigi;Chambers James J;Rotondaro Antonio L P;Visokay Mark R

  • Anneal sequence for high-k film property optimization

    Mark R. Visokay;Luigi Colombo;Antonio L. P. Rotondaro

  • MOS transistor gates with thin lower metal silicide and methods for making the same

    Robert William Murto;Luigi Colombo;Mark Robert Visokay

  • Method for fabricating transistor gate structures and gate dielectrics thereof

    Mark R. Visokay;Luigi Colombo;James J. Chambers;Antonio L. P. Rotondaro

  • Etchstop for integrated circuits

    Guoqiang Xing;Glenn A. Cerny;Mark R. Visokay

  • Adhesion promoting sacrificial etch stop layer in advanced capacitor structures

    Mark R. Visokay;Luigi Colombo;Paul McIntyre;Scott R. Summerfelt

  • Hafnium interdiffusion studies from hafnium silicate into silicon

    M. Quevedo-Lopez;M. El-Bouanani;S. Addepalli;J. L. Duggan

  • Dual work function CMOS devices utilizing carbide based electrodes

    James Joseph Chambers;Luigi Colombo;Mark Robert Visokay

  • Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

    Ching-Huang Lu;G.M.T. Wong;M.D. Deal;W. Tsai

  • Top surface roughness reduction of high-k dielectric materials using plasma based processes

    Manuel A. Quevedo-Lopez;James J. Chambers;Luigi Colombo;Mark R. Visokay

Frequent Co-Authors

Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Bruce E. Gnade
Bruce E. Gnade The University of Texas at Dallas
Scott R. Summerfelt
Scott R. Summerfelt Texas Instruments (United States)
Paul C. McIntyre
Paul C. McIntyre Stanford University
Thomas H. Baum
Thomas H. Baum IBM (United States)
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Igor Levin
Igor Levin National Institute of Standards and Technology
Daniel A. Fischer
Daniel A. Fischer National Institute of Standards and Technology

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