World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5945
World Ranking
4722
National Ranking
1658

Mark R. Visokay publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mark R. Visokay sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 111 publications — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mark R. Visokay D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mark R. Visokay sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Mark R. Visokay is affiliated with Texas Instruments in the United States. Their professional contributions are associated with this organization within the country.

There are no records of recent papers, co-authors, or frequent publication venues connected to Mark R. Visokay. Likewise, there are no data entries indicating book publications, main or subfields of study, or specific main topics of research work.

No awards have been documented for this individual.

Best Publications

  • Application of HfSiON as a gate dielectric material

    M. R. Visokay;J. J. Chambers;A. L. P. Rotondaro;A. Shanware

  • Effect of nitrogen on band alignment in HfSiON gate dielectrics

    S. Sayan;N. V. Nguyen;J. Ehrstein;J. J. Chambers

  • Annealing of high-k dielectric materials

    Antonio L. P. Rotondaro;Mark R. Visokay;Luigi Colombo

  • Process for manufacturing dual work function metal gates in a microelectronics device

    Luigi Colombo;James J. Chambers;Mark R. Visokay

  • Integrated circuit and method

    Theodore S. Moise;Guoqiang Xing;Mark Visokay;Justin F. Gaynor

  • Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing

    Mark Robert Visokay;Antonio Luis Pacheco Rotondaro;Luigi Colombo

  • Gate structure and method

    Mark R. Visokay;Antonio L. P. Rotondaro;Luigi Colombo

  • Metal gate MOS transistors and methods for making the same

    Mark Visokay;Luigi Colombo;James J. Chambers

  • Advanced CMOS transistors with a novel HfSiON gate dielectric

    A.L.P. Rotondaro;M.R. Visokay;J.J. Chambers;A. Shanware

  • Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

    B. C. Hendrix;A. S. Borovik;C. Xu;J. F. Roeder

  • Gate dielectric and method

    Mark R. Visokay;Antonio L. P. Rotondaro;Luigi Colombo

  • INTERFACE LAYER GROWTH FOR HIGH-K GATE DIELECTRIC AT HIGH TEMPERATURE

    Colombo Luigi;Chambers James J;Rotondaro Antonio L P;Visokay Mark R

  • Anneal sequence for high-k film property optimization

    Mark R. Visokay;Luigi Colombo;Antonio L. P. Rotondaro

  • MOS transistor gates with thin lower metal silicide and methods for making the same

    Robert William Murto;Luigi Colombo;Mark Robert Visokay

  • Method for fabricating transistor gate structures and gate dielectrics thereof

    Mark R. Visokay;Luigi Colombo;James J. Chambers;Antonio L. P. Rotondaro

  • Etchstop for integrated circuits

    Guoqiang Xing;Glenn A. Cerny;Mark R. Visokay

  • Adhesion promoting sacrificial etch stop layer in advanced capacitor structures

    Mark R. Visokay;Luigi Colombo;Paul McIntyre;Scott R. Summerfelt

  • Hafnium interdiffusion studies from hafnium silicate into silicon

    M. Quevedo-Lopez;M. El-Bouanani;S. Addepalli;J. L. Duggan

  • Dual work function CMOS devices utilizing carbide based electrodes

    James Joseph Chambers;Luigi Colombo;Mark Robert Visokay

  • Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

    Ching-Huang Lu;G.M.T. Wong;M.D. Deal;W. Tsai

  • Top surface roughness reduction of high-k dielectric materials using plasma based processes

    Manuel A. Quevedo-Lopez;James J. Chambers;Luigi Colombo;Mark R. Visokay

Frequent Co-Authors

Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Bruce E. Gnade
Bruce E. Gnade The University of Texas at Dallas
Scott R. Summerfelt
Scott R. Summerfelt Texas Instruments (United States)
Thomas H. Baum
Thomas H. Baum IBM (United States)
Paul C. McIntyre
Paul C. McIntyre Stanford University
Igor Levin
Igor Levin National Institute of Standards and Technology
Daniel A. Fischer
Daniel A. Fischer National Institute of Standards and Technology

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