Thomas H. Baum is affiliated with IBM in the United States, focusing on research in engineering and materials science. Their work primarily intersects the fields of Electrical and Electronic Engineering and Materials Chemistry.
They have published on topics related to semiconductor materials and devices, ferroelectric and negative capacitance devices, as well as the electronic and structural properties of oxides.
Thomas H. Baum's recent scholarly contributions include the paper titled Selective ALD of SiN using SiI4 and NH3: The effect of temperature, plasma treatment, and oxide underlayer, published in 2020 in the Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
Their frequent coauthors include Han Wang and B. C. Hendrix, indicating collaboration within specialized domains of materials and surface sciences.
Their publications have appeared in focused scientific venues, notably in the Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, where they have contributed research work related to thin film technologies and surface modification techniques.
Buskirk Peter C. Van;Michael W. Russell;Steven M. Bilodeau;Thomas H. Baum
Robin A. Gardiner;Peter S. Kirlin;Thomas H. Baum;Douglas Gordon
Frank Dimeo;Philip S H Chen;Jeffrey W Neuner;James Welch
Chongying Xu;Thomas H. Baum;Michael B. Korzenski
Frank DiMeo;Thomas Baum
Scott K. Reynolds;Christopher J. Smart;Emil F. Baran;Thomas H. Baum
F. A. Houle;C. R. Jones;T. Baum;C. Pico
B. C. Hendrix;A. S. Borovik;C. Xu;J. F. Roeder
Thomas H. Baum;Carol R. Jones
Gregory T. Stauf;Jeffrey F. Roeder;Thomas H. Baum
Ziyun Wang;Chongying Xu;Ravi K. Laxman;Thomas H. Baum
Gautam Bhandari;Thomas H. Baum
Peter C. Van Buskirk;Michael W. Russell;Steven M. Bilodeau;Thomas H. Baum
C. R. Jones;F. A. Houle;C. A. Kovac;T. H. Baum
Melissa K. Rath;David D. Bernhard;David Minsek;Michael B. Korzenski
Thomas H. Baum;Carl E. Larson;Robert L. Jackson
Pascal Doppelt;Thomas H. Baum
Thomas H. Baum;Carl E. Larson
T. T. Kodas;E. M. Engler;V. Y. Lee;R. Jacowitz
Michael B. Korzenski;Thomas H. Baum;Chongying Xu;Eliodor G. Ghenciu
David D. Bernhard;Weihua Wang;Thomas H. Baum
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