D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 32 Citations 4,658 234 World Ranking 4411 National Ranking 1646

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

Paul Kirsch mainly focuses on Optoelectronics, Dielectric, Analytical chemistry, High-κ dielectric and Permittivity. He combines subjects such as Resistive random-access memory, Protein filament, Metal, Transistor and Electrical engineering with his study of Optoelectronics. His Dielectric research includes elements of Amorphous solid, Electrical conductor, Condensed matter physics and Gate oxide.

The various areas that he examines in his Analytical chemistry study include Atomic layer deposition, Electron mobility, Annealing and MOSFET. His studies deal with areas such as Threshold voltage, Figure of merit and Amplitude as well as High-κ dielectric. His study in Permittivity is interdisciplinary in nature, drawing from both Tetragonal crystal system, Thin film and Equivalent oxide thickness.

His most cited work include:

  • Metal oxide resistive memory switching mechanism based on conductive filament properties (313 citations)
  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning (141 citations)
  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices (130 citations)

What are the main themes of his work throughout his whole career to date?

Paul Kirsch mostly deals with Optoelectronics, MOSFET, High-κ dielectric, Electronic engineering and Dielectric. His Optoelectronics research integrates issues from Metal gate, Transistor and Electrical engineering. His work deals with themes such as NMOS logic, Silicon, Field-effect transistor, Logic gate and Atomic layer deposition, which intersect with MOSFET.

His High-κ dielectric research incorporates elements of Tin, Metal, Time-dependent gate oxide breakdown and Leakage. His work carried out in the field of Electronic engineering brings together such families of science as Doping, SILC, Node, Threshold voltage and Substrate. His studies in Dielectric integrate themes in fields like Amorphous solid, Gate dielectric, Condensed matter physics and Analytical chemistry.

He most often published in these fields:

  • Optoelectronics (71.43%)
  • MOSFET (34.75%)
  • High-κ dielectric (34.75%)

What were the highlights of his more recent work (between 2012-2014)?

  • Optoelectronics (71.43%)
  • Electronic engineering (29.73%)
  • MOSFET (34.75%)

In recent papers he was focusing on the following fields of study:

Paul Kirsch focuses on Optoelectronics, Electronic engineering, MOSFET, Dielectric and Resistive random-access memory. His Optoelectronics research is multidisciplinary, incorporating perspectives in Field-effect transistor and Transistor. His MOSFET study also includes

  • Insulator most often made with reference to Atomic layer deposition,
  • Quantum well that connect with fields like Subthreshold swing.

In his study, Substrate is strongly linked to Threshold voltage, which falls under the umbrella field of Dielectric. His Resistive random-access memory research includes themes of Reset, Parasitic extraction and Hafnium compounds. Paul Kirsch focuses mostly in the field of Gate dielectric, narrowing it down to topics relating to Metal gate and, in certain cases, High-κ dielectric.

Between 2012 and 2014, his most popular works were:

  • ${ m MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts (111 citations)
  • MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts (96 citations)
  • Microscopy study of the conductive filament in HfO2 resistive switching memory devices (53 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Optoelectronics, Transistor, MOSFET, Dielectric and Electronic engineering are his primary areas of study. His work focuses on many connections between Optoelectronics and other disciplines, such as Current crowding, that overlap with his field of interest in Silicide. His Silicide research is multidisciplinary, incorporating elements of High-κ dielectric and Doping.

His research investigates the connection between MOSFET and topics such as Threshold voltage that intersect with problems in Transconductance, Substrate and CMOS. Paul Kirsch has included themes like Stress, Protein filament and Analytical chemistry in his Dielectric study. His Electronic engineering study integrates concerns from other disciplines, such as Wafer, Capacitor, Molecular physics, Electrical resistivity and conductivity and Dielectric strength.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch.
Journal of Applied Physics (2011)

466 Citations

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch.
Journal of Applied Physics (2011)

466 Citations

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young.
Applied Physics Letters (2008)

199 Citations

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young.
Applied Physics Letters (2008)

199 Citations

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght.
Journal of Applied Physics (2006)

192 Citations

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght.
Journal of Applied Physics (2006)

192 Citations

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch.
Applied Physics Letters (2007)

180 Citations

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch.
Applied Physics Letters (2007)

180 Citations

Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki.
Journal of Applied Physics (2006)

163 Citations

Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki.
Journal of Applied Physics (2006)

163 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Paul Kirsch

Gennadi Bersuker

Gennadi Bersuker

The Aerospace Corporation

Publications: 89

Luca Larcher

Luca Larcher

University of Modena and Reggio Emilia

Publications: 61

Guido Groeseneken

Guido Groeseneken

KU Leuven

Publications: 41

Byoung Hun Lee

Byoung Hun Lee

Pohang University of Science and Technology

Publications: 35

Nadine Collaert

Nadine Collaert

Imec

Publications: 32

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 31

Rino Choi

Rino Choi

Inha University

Publications: 31

Mario Lanza

Mario Lanza

King Abdullah University of Science and Technology

Publications: 26

Aaron Thean

Aaron Thean

National University of Singapore

Publications: 26

Daniele Ielmini

Daniele Ielmini

Polytechnic University of Milan

Publications: 24

Robin Degraeve

Robin Degraeve

Imec

Publications: 22

Cheol Seong Hwang

Cheol Seong Hwang

Seoul National University

Publications: 21

Malgorzata Jurczak

Malgorzata Jurczak

Lam Research (United States)

Publications: 20

Yoshio Nishi

Yoshio Nishi

Stanford University

Publications: 19

Sanjay K. Banerjee

Sanjay K. Banerjee

The University of Texas at Austin

Publications: 19

John Robertson

John Robertson

University of Cambridge

Publications: 19

Trending Scientists

Laura M. Haas

Laura M. Haas

University of Massachusetts Amherst

Junqing Li

Junqing Li

Liaocheng University

So Yeon Kim

So Yeon Kim

LG (United States)

Heraldo L. Vasconcelos

Heraldo L. Vasconcelos

Federal University of Uberlândia

Edgar B. Cahoon

Edgar B. Cahoon

University of Nebraska–Lincoln

Felix Randow

Felix Randow

MRC Laboratory of Molecular Biology

Suzanne Benjannet

Suzanne Benjannet

University of Montreal

Bin Zhang

Bin Zhang

Icahn School of Medicine at Mount Sinai

Claudio Soto

Claudio Soto

The University of Texas Health Science Center at Houston

Paul Berbigier

Paul Berbigier

INRAE : Institut national de recherche pour l'agriculture, l'alimentation et l'environnement

Perrine Plouin

Perrine Plouin

Necker-Enfants Malades Hospital

Guy Chouvet

Guy Chouvet

Inserm : Institut national de la santé et de la recherche médicale

François Mauguière

François Mauguière

University of Lyon System

Laurie R. Weingart

Laurie R. Weingart

Carnegie Mellon University

Tai Hing Lam

Tai Hing Lam

University of Hong Kong

Heidi Hjelmeland

Heidi Hjelmeland

Norwegian University of Science and Technology

Something went wrong. Please try again later.