World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6372
World Ranking
4513
National Ranking
1597

Paul Kirsch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Paul Kirsch sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 273 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Paul Kirsch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Paul Kirsch sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Paul Kirsch is affiliated with Samsung Austin Semiconductor in the United States. Their professional focus is associated with this institution, which is known for its work in semiconductor manufacturing and technology development.

Details about specific recent research papers, co-authors, publication venues, book publications, or particular topics related to Paul Kirsch's work are not available. Similarly, there is no explicit information about awards, fields or subfields of study, or the main subjects of their academic and professional contributions.

The available data does not list recent publication titles or journals, which means it is not possible to outline the specific scholarly contributions by paper or research topic at this time.

Without information on frequent collaborators or research groups, insights into professional networks or ongoing collaborative projects cannot be provided.

There is no record of academic awards or distinctions conferred upon Paul Kirsch, leaving such recognitions unnoted in this profile.

Overall, Paul Kirsch is identified as an active researcher or professional associated with Samsung Austin Semiconductor, suggesting involvement in semiconductor-related activities, though detailed records of scientific output or topic specialization are not currently accessible.

Best Publications

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

    P. D. Kirsch;C. S. Kang;J. Lozano;J. C. Lee

  • Gate stack technology for nanoscale devices

    Byoung Hun Lee;Jungwoo Oh;Hsing Huang Tseng;Rajarao Jammy

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

    S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch

  • ${ m MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts

    Yuchen Du;Lingming Yang;Jingyun Zhang;Han Liu

  • Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

    P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

    Yuchen Du;Lingming Yang;Jingyun Zhang;Han Liu

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Work function engineering using lanthanum oxide interfacial layers

    H. N. Alshareef;M. Quevedo-Lopez;H. C. Wen;R. Harris

  • Microscopy study of the conductive filament in HfO2 resistive switching memory devices

    S. Privitera;G. Bersuker;B. Butcher;A. Kalantarian

  • Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

    Tim S. Böscke;Shrinivas Govindarajan;Paul D. Kirsch;Puiyee Y. Hung

  • Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric

    Anthony I. Chou;Michael P. Chudzik;Toshiharu Furukawa;Oleg Gluschenkov

  • Metal Electrode/High- $k$ Dielectric Gate-Stack Technology for Power Management

    Byoung Hun Lee;Seung Chul Song;Seung Chul Song;Rino Choi;Rino Choi;P. Kirsch

  • Effects of RRAM Stack Configuration on Forming Voltage and Current Overshoot

    D. C. Gilmer;G. Bersuker;H.-Y. Park;C. Park

  • Low power operating bipolar TMO ReRAM for sub 10 nm era

    M. J. Kim;I. G. Baek;Y. H. Ha;S. J. Baik

  • 5GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography

    Unknown

  • Random telegraph noise (RTN) in scaled RRAM devices

    D. Veksler;G. Bersuker;L. Vandelli;A. Padovani

  • Dipole Moment Model Explaining nFET V t Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

    P. Sivasubramani;T.S. Boscke;J. Huang;C.D. Young

  • Effects of ALD HfO2 thickness on charge trapping and mobility

    J. H. Sim;S. C. Song;P. D. Kirsch;C. D. Young

Frequent Co-Authors

Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Prashant Majhi
Prashant Majhi Intel (United States)
Rino Choi
Rino Choi Inha University
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Joseph C. Woicik
Joseph C. Woicik National Institute of Standards and Technology

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