World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6372
World Ranking
4513
National Ranking
1596

Overview

Paul Kirsch is affiliated with Samsung Austin Semiconductor in the United States. Their professional focus is associated with this institution, which is known for its work in semiconductor manufacturing and technology development.

Details about specific recent research papers, co-authors, publication venues, book publications, or particular topics related to Paul Kirsch's work are not available. Similarly, there is no explicit information about awards, fields or subfields of study, or the main subjects of their academic and professional contributions.

The available data does not list recent publication titles or journals, which means it is not possible to outline the specific scholarly contributions by paper or research topic at this time.

Without information on frequent collaborators or research groups, insights into professional networks or ongoing collaborative projects cannot be provided.

There is no record of academic awards or distinctions conferred upon Paul Kirsch, leaving such recognitions unnoted in this profile.

Overall, Paul Kirsch is identified as an active researcher or professional associated with Samsung Austin Semiconductor, suggesting involvement in semiconductor-related activities, though detailed records of scientific output or topic specialization are not currently accessible.

Best Publications

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

    P. D. Kirsch;C. S. Kang;J. Lozano;J. C. Lee

  • Gate stack technology for nanoscale devices

    Byoung Hun Lee;Jungwoo Oh;Hsing Huang Tseng;Rajarao Jammy

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

    S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch

  • ${ m MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts

    Yuchen Du;Lingming Yang;Jingyun Zhang;Han Liu

  • Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

    P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

    Yuchen Du;Lingming Yang;Jingyun Zhang;Han Liu

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Work function engineering using lanthanum oxide interfacial layers

    H. N. Alshareef;M. Quevedo-Lopez;H. C. Wen;R. Harris

  • Microscopy study of the conductive filament in HfO2 resistive switching memory devices

    S. Privitera;G. Bersuker;B. Butcher;A. Kalantarian

  • Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

    Tim S. Böscke;Shrinivas Govindarajan;Paul D. Kirsch;Puiyee Y. Hung

  • Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric

    Anthony I. Chou;Michael P. Chudzik;Toshiharu Furukawa;Oleg Gluschenkov

  • Metal Electrode/High- $k$ Dielectric Gate-Stack Technology for Power Management

    Byoung Hun Lee;Seung Chul Song;Seung Chul Song;Rino Choi;Rino Choi;P. Kirsch

  • Effects of RRAM Stack Configuration on Forming Voltage and Current Overshoot

    D. C. Gilmer;G. Bersuker;H.-Y. Park;C. Park

  • Low power operating bipolar TMO ReRAM for sub 10 nm era

    M. J. Kim;I. G. Baek;Y. H. Ha;S. J. Baik

  • 5GHz surface acoustic wave devices based on aluminum nitride/diamond layered structure realized using electron beam lithography

    Unknown

  • Random telegraph noise (RTN) in scaled RRAM devices

    D. Veksler;G. Bersuker;L. Vandelli;A. Padovani

  • Dipole Moment Model Explaining nFET V t Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

    P. Sivasubramani;T.S. Boscke;J. Huang;C.D. Young

  • Effects of ALD HfO2 thickness on charge trapping and mobility

    J. H. Sim;S. C. Song;P. D. Kirsch;C. D. Young

Frequent Co-Authors

Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Prashant Majhi
Prashant Majhi Intel (United States)
Rino Choi
Rino Choi Inha University
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Joseph C. Woicik
Joseph C. Woicik National Institute of Standards and Technology
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology

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Best Scientists Citing Paul Kirsch