Paul Kirsch mainly focuses on Optoelectronics, Dielectric, Analytical chemistry, High-κ dielectric and Permittivity. He combines subjects such as Resistive random-access memory, Protein filament, Metal, Transistor and Electrical engineering with his study of Optoelectronics. His Dielectric research includes elements of Amorphous solid, Electrical conductor, Condensed matter physics and Gate oxide.
The various areas that he examines in his Analytical chemistry study include Atomic layer deposition, Electron mobility, Annealing and MOSFET. His studies deal with areas such as Threshold voltage, Figure of merit and Amplitude as well as High-κ dielectric. His study in Permittivity is interdisciplinary in nature, drawing from both Tetragonal crystal system, Thin film and Equivalent oxide thickness.
Paul Kirsch mostly deals with Optoelectronics, MOSFET, High-κ dielectric, Electronic engineering and Dielectric. His Optoelectronics research integrates issues from Metal gate, Transistor and Electrical engineering. His work deals with themes such as NMOS logic, Silicon, Field-effect transistor, Logic gate and Atomic layer deposition, which intersect with MOSFET.
His High-κ dielectric research incorporates elements of Tin, Metal, Time-dependent gate oxide breakdown and Leakage. His work carried out in the field of Electronic engineering brings together such families of science as Doping, SILC, Node, Threshold voltage and Substrate. His studies in Dielectric integrate themes in fields like Amorphous solid, Gate dielectric, Condensed matter physics and Analytical chemistry.
Paul Kirsch focuses on Optoelectronics, Electronic engineering, MOSFET, Dielectric and Resistive random-access memory. His Optoelectronics research is multidisciplinary, incorporating perspectives in Field-effect transistor and Transistor. His MOSFET study also includes
In his study, Substrate is strongly linked to Threshold voltage, which falls under the umbrella field of Dielectric. His Resistive random-access memory research includes themes of Reset, Parasitic extraction and Hafnium compounds. Paul Kirsch focuses mostly in the field of Gate dielectric, narrowing it down to topics relating to Metal gate and, in certain cases, High-κ dielectric.
Optoelectronics, Transistor, MOSFET, Dielectric and Electronic engineering are his primary areas of study. His work focuses on many connections between Optoelectronics and other disciplines, such as Current crowding, that overlap with his field of interest in Silicide. His Silicide research is multidisciplinary, incorporating elements of High-κ dielectric and Doping.
His research investigates the connection between MOSFET and topics such as Threshold voltage that intersect with problems in Transconductance, Substrate and CMOS. Paul Kirsch has included themes like Stress, Protein filament and Analytical chemistry in his Dielectric study. His Electronic engineering study integrates concerns from other disciplines, such as Wafer, Capacitor, Molecular physics, Electrical resistivity and conductivity and Dielectric strength.
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Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch.
Journal of Applied Physics (2011)
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch.
Journal of Applied Physics (2011)
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young.
Applied Physics Letters (2008)
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young.
Applied Physics Letters (2008)
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght.
Journal of Applied Physics (2006)
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght.
Journal of Applied Physics (2006)
Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch.
Applied Physics Letters (2007)
Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
S. Govindarajan;T. S. Böscke;P. Sivasubramani;P. D. Kirsch;P. D. Kirsch.
Applied Physics Letters (2007)
Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility
P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki.
Journal of Applied Physics (2006)
Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility
P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki.
Journal of Applied Physics (2006)
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