World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
46
Citations
8933
World Ranking
11384
National Ranking
2674

Alan R. Krauss publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alan R. Krauss sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 186 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alan R. Krauss D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alan R. Krauss sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Atom

Alan R. Krauss mostly deals with Diamond, Chemical vapor deposition, Analytical chemistry, Thin film and Grain boundary. His work deals with themes such as Electron energy loss spectroscopy and Argon, which intersect with Diamond. The concepts of his Chemical vapor deposition study are interwoven with issues in Carbon film, Inorganic chemistry, Ferric, Transmission electron microscopy and Ion source.

His work is dedicated to discovering how Analytical chemistry, Field electron emission are connected with Optoelectronics, Band gap and Density of states and other disciplines. His Thin film research incorporates themes from Dielectric loss, Dielectric and Permittivity. His Grain boundary research focuses on Electron diffraction and how it connects with Microscopy.

His most cited work include:

  • Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films (406 citations)
  • Field emission from nanotube bundle emitters at low fields (401 citations)
  • Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices (311 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Analytical chemistry, Thin film, Diamond, Sputtering and Chemical vapor deposition. His Analytical chemistry research is multidisciplinary, incorporating elements of Ion beam, Field electron emission and Scanning electron microscope. His Thin film study incorporates themes from Optoelectronics, Deposition and Ferroelectricity.

His research investigates the link between Diamond and topics such as Nanotechnology that cross with problems in Silicon. His Sputtering research integrates issues from Alloy, Substrate, Overlayer and Atomic physics. Alan R. Krauss interconnects Transmission electron microscopy, Grain boundary and Nucleation in the investigation of issues within Chemical vapor deposition.

He most often published in these fields:

  • Analytical chemistry (52.38%)
  • Thin film (41.07%)
  • Diamond (33.33%)

What were the highlights of his more recent work (between 2000-2008)?

  • Diamond (33.33%)
  • Analytical chemistry (52.38%)
  • Chemical vapor deposition (20.83%)

In recent papers he was focusing on the following fields of study:

Alan R. Krauss mainly focuses on Diamond, Analytical chemistry, Chemical vapor deposition, Optoelectronics and Nitrogen. His study of Material properties of diamond is a part of Diamond. Density of states and Band gap is closely connected to Electron in his research, which is encompassed under the umbrella topic of Analytical chemistry.

His Chemical vapor deposition research incorporates themes from Surface finish, Metallurgy, Corrosion and Service life. His study explores the link between Optoelectronics and topics such as Field electron emission that cross with problems in Alloy, Lithium, Work function, Monolayer and Coating. His work in Nanotechnology addresses subjects such as Composite material, which are connected to disciplines such as Thin film.

Between 2000 and 2008, his most popular works were:

  • Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films (406 citations)
  • Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices (311 citations)
  • Electron field emission for ultrananocrystalline diamond films (173 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Atom

Alan R. Krauss spends much of his time researching Diamond, Grain boundary, Analytical chemistry, Chemical vapor deposition and Nitrogen. He has included themes like Cyclic voltammetry, Amorphous carbon, Thin film, Raman spectroscopy and Field electron emission in his Diamond study. His study in Thin film is interdisciplinary in nature, drawing from both Silicon and Microelectromechanical systems.

His Raman spectroscopy research includes elements of Electron energy loss spectroscopy, Mineralogy and Grain size. The study incorporates disciplines such as Optoelectronics, Band gap, Material properties of diamond and Density of states in addition to Field electron emission. Alan R. Krauss integrates Analytical chemistry and Surface states in his studies.

Best Publications

  • Field emission from nanotube bundle emitters at low fields

    Q. H. Wang;T. D. Corrigan;Jiyan Dai;R. P.H. Chang

  • Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

    S. Bhattacharyya;O. Auciello;J. Birrell;J. A. Carlisle

  • Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices

    A.R. Krauss;O. Auciello;D.M. Gruen;A. Jayatissa

  • Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices

    Jaemo Im;O. Auciello;P. K. Baumann;S. K. Streiffer

  • Control of diamond film microstructure by Ar additions to CH4/H2 microwave plasmas

    D. Zhou;D. Zhou;D. M. Gruen;L. C. Qin;T. G. McCauley

  • Fullerenes as precursors for diamond film growth without hydrogen or oxygen additions

    Dieter M. Gruen;Shengzhong Liu;Alan R. Krauss;Jianshu Luo

  • Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma

    D. Zhou;D. Zhou;T. G. McCauley;Lu-Chang Q Qin;A. R. Krauss

  • Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas

    D. Zhou;D. Zhou;A. R. Krauss;L. C. Qin;T. G. McCauley

  • Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

    Lu-Chang Q Qin;D. Zhou;A. R. Krauss;D. M. Gruen

  • Electron field emission for ultrananocrystalline diamond films

    A. R. Krauss;O. Auciello;M. Q. Ding;D. M. Gruen

  • Microstructure of ultrananocrystalline diamond films grown by microwave Ar–CH4 plasma chemical vapor deposition with or without added H2

    S. Jiao;A. Sumant;M. A. Kirk;D. M. Gruen

  • Buckyball microwave plasmas: Fragmentation and diamond‐film growth

    Dieter M. Gruen;Shengzhong Liu;Alan R. Krauss;Xianzheng Pan

  • Tribological properties of nanocrystalline diamond films

    A. Erdemir;G.R. Fenske;A.R. Krauss;D.M. Gruen

  • The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond

    T.D. Corrigan;D.M. Gruen;A.R. Krauss;P. Zapol

  • Temperature dependence of the growth rate for nanocrystalline diamond films deposited from an Ar/CH4 microwave plasma

    Thomas G. McCauley;Dieter M. Gruen;Alan R. Krauss

  • The Structure and Electrochemical Behavior of Nitrogen-Containing Nanocrystalline Diamond Films Deposited from CH4/N2/Ar Mixtures

    Qingyun Chen;Qingyun Chen;Dieter M. Gruen;Alan R. Krauss;Timothy D. Corrigan;Timothy D. Corrigan

  • Characterization of nanocrystalline diamond films by core‐level photoabsorption

    D. M. Gruen;A. R. Krauss;C. D. Zuiker;R. Csencsits

  • Carbon dimer, C2, as a growth species for diamond films from methane/hydrogen/argon microwave plasmas

    Dieter M. Gruen;Chris D. Zuiker;Alan R. Krauss;Xianzheng Pan

  • Initial oxidation of zirconium and Zircaloy-2 with oxygen and water vapor at room temperature

    Yoshitaka Nishino;Alan R. Krauss;Yuping Lin;Dieter M. Gruen

  • Physical and tribological properties of diamond films grown in argoncarbon plasmas

    C. Zuiker;A.R. Krauss;D.M. Gruen;X. Pan

Frequent Co-Authors

Dieter M. Gruen
Dieter M. Gruen Argonne National Laboratory
Orlando Auciello
Orlando Auciello The University of Texas at Dallas
Robert P. H. Chang
Robert P. H. Chang Northwestern University
Eugene A. Irene
Eugene A. Irene University of North Carolina at Chapel Hill
Ali Erdemir
Ali Erdemir Texas A&M University
Angus I. Kingon
Angus I. Kingon Brown University
Anirudha V. Sumant
Anirudha V. Sumant Argonne National Laboratory
Lu Chang Qin
Lu Chang Qin University of North Carolina at Chapel Hill
S. K. Streiffer
S. K. Streiffer Argonne National Laboratory
J. E. Lawler
J. E. Lawler University of Wisconsin–Madison

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Best Scientists Citing Alan R. Krauss