World's Best Scientists 2026 revealed!
James Mckell Edwin Harper

James Mckell Edwin Harper

D-Index & Metrics

Materials Science

D-Index
56
Citations
10890
World Ranking
8274
National Ranking
2035

James Mckell Edwin Harper publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where James Mckell Edwin Harper sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 208 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

James Mckell Edwin Harper D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where James Mckell Edwin Harper sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

James Mckell Edwin Harper was affiliated with IBM in the United States during their career. Their research output, collaborations, and publication venues have not been documented in the available data set.

There are no recorded recent papers, frequent co-authors, or details about publication venues associated with Harper. The absence of these data points limits the ability to outline specific research contributions or academic relationships.

The scientist's work did not have any listed main fields of study, subfields, or primary topics associated with it, thus no detailed overview of areas of expertise can be provided based on the current information.

Similarly, there are no details about any book publications or notable awards received documented for Harper.

Given that James Mckell Edwin Harper is deceased, all references to their career and contributions are presented in the past tense.

Best Publications

  • Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

    Karen Holloway;Peter M. Fryer;Cyril Cabral;J. M. E. Harper

  • Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

    J. M. E. Harper;C. Cabral;P. C. Andricacos;L. Gignac

  • Copper interconnections and reliability

    C.-K. Hu;J.M.E. Harper

  • Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering

    F.M. D'Heurle;F.M. D'Heurle;J.M.E. Harper

  • Method of electrochemical mechanical planarization

    Cyprian Emeka Uzoh;James Mckell Edwin Harper

  • Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology

    H. R. Kaufman;J. J. Cuomo;J. M. E. Harper

  • Method and apparatus for planarizing workpiece

    Mackail Edwin Harper James;Emeka Uzoo Saipryan;サイプライアン・エメカ・ウゾー;ジェイムス・マッケル・エドウィン・ハーパー

  • Technology and applications of broad-beam ion sources used in sputtering. Part II. Applications

    J. M. E. Harper;J. J. Cuomo;H. R. Kaufman

  • The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

    L. A. Clevenger;A. Mutscheller;J. M. E. Harper;C. Cabral

  • Modification of niobium film stress by low‐energy ion bombardment during deposition

    J. J. Cuomo;J. M. E. Harper;C. R. Guarnieri;D. S. Yee

  • Thermal properties of layered transition-metal dichalcogenides at charge-density-wave transitions

    J. M. E. Harper;T. H. Geballe;F. J. DiSalvo

  • Copper alloys for chip and package interconnections

    Panayotis Constantinou Andricacos;Hariklia Deligianni;James Mckell Edwin Harper;Chao-Kun Hu

  • Control of thin film orientation by glancing angle ion bombardment during growth

    Lock See Yu;James M. E. Harper;Jerome J. Cuomo;David A. Smith

  • Reflective spatial light modulator array

    Evan George Colgan;James Mckell Edwin Harper;Frank Benjamin Kaufman;Margaret Paggi Manny

  • Alignment of thin films by glancing angle ion bombardment during deposition

    Lock See Yu;James M. E. Harper;Jerome J. Cuomo;David A. Smith

  • Quantitative ion beam process for the deposition of compound thin films

    J. M. E. Harper;J. J. Cuomo;H. T. G. Hentzell

  • Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

    C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

  • Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

    R. W. Mann;G. L. Miles;T. A. Knotts;D. W. Rakowski

  • On the use of alloying elements for Cu interconnect applications

    K. Barmak;C. Cabral;K. P. Rodbell;J. M. E. Harper

  • Copper alloy metallurgies for VLSI interconnection structures

    James Mckell Edwin Harper;Karen Lynne Holloway;Thomas Yu-Kiu Kwok

  • Higher nitrides of hafnium, zirconium, and titanium synthesized by dual ion beam deposition

    B. O. Johansson;H. T. G. Hentzell;J. M. E. Harper;J. J. Cuomo

Frequent Co-Authors

Cyril Cabral
Cyril Cabral IBM (United States)
Jerome J. Cuomo
Jerome J. Cuomo North Carolina State University
Christian Lavoie
Christian Lavoie IBM (United States)
François M. d'Heurle
François M. d'Heurle IBM (United States)
Cyprian Emeka Uzoh
Cyprian Emeka Uzoh IBM (United States)
Evan G. Colgan
Evan G. Colgan IBM (United States)
Scott K. Reynolds
Scott K. Reynolds IBM (United States)
David Smith
David Smith University of Oxford
Katayun Barmak
Katayun Barmak Columbia University
Katherine L. Saenger
Katherine L. Saenger Auburn University

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