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D-Index & Metrics

Materials Science

D-Index
56
Citations
11116
World Ranking
8262
National Ranking
2033

Albert V. Davydov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Albert V. Davydov sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 317 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Albert V. Davydov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Albert V. Davydov sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Albert V. Davydov is affiliated with the National Institute of Standards and Technology in the United States. Their research primarily spans the fields of Materials Science and Engineering, with significant contributions to the subfields of Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

The scientist's work covers several main topics, including:

  • 2D Materials and Applications
  • Graphene research and applications
  • Topological Materials and Phenomena
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Magnetic properties of thin films
  • Advanced Thermoelectric Materials and Devices

Frequent publication venues for this researcher reflect a focus on cutting-edge physical sciences and materials engineering, including:

  • arXiv (Cornell University)
  • ACS Nano
  • Advanced Materials
  • The Journal of Physical Chemistry C
  • Applied Physics Letters

Notable recent papers authored or co-authored by Albert V. Davydov include:

  • "Facile route to bulk ultrafine-grain steels for high strength and ductility," 2021, Nature
  • "Photocurrent detection of the orbital angular momentum of light," 2020, Science
  • "Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory," 2024, Nature Communications
  • "Tuning the hysteresis of a metal-insulator transition via lattice compatibility," 2020, Digital Repository at the University of Maryland (University of Maryland College Park)
  • "Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon," 2022, Nature Electronics

The scientist regularly collaborates with a select group of co-authors, with the most frequent partners being:

  • Sergiy Krylyuk
  • H. R. Zhang
  • Deep Jariwala
  • Angela R. Hight Walker
  • Patrick M. Vora

Best Publications

  • In situ atomic-scale imaging of electrochemical lithiation in silicon

    Xiao Hua Liu;Jiang Wei Wang;Shan Huang;Feifei Fan

  • Electric-field induced structural transition in vertical MoTe 2 - and Mo 1-x W x Te 2 -based resistive memories

    Feng Zhang;Huairuo Zhang;Sergiy Krylyuk;Cory A. Milligan

  • JARVIS: An Integrated Infrastructure for Data-driven Materials Design

    Kamal Choudhary;Kevin F. Garrity;Andrew C. E. Reid;Brian DeCost

  • The 2019 materials by design roadmap

    Kirstin Alberi;Marco Buongiorno Nardelli;Andriy Zakutayev;Lubos Mitas

  • On-the-fly Closed-loop Autonomous Materials Discovery via Bayesian Active Learning

    A. Gilad Kusne;Heshan Yu;Changming Wu;Huairuo Zhang

  • On-the-fly closed-loop materials discovery via Bayesian active learning.

    A. Gilad Kusne;A. Gilad Kusne;Heshan Yu;Changming Wu;Huairuo Zhang

  • Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    Dmitry Ruzmetov;Dmitry Ruzmetov;Kehao Zhang;Gheorghe Stan;Berc Kalanyan

  • Facile route to bulk ultrafine-grain steels for high strength and ductility

    Junheng Gao;Suihe Jiang;Huairuo Zhang;Yuhe Huang

  • The joint automated repository for various integrated simulations (JARVIS) for data-driven materials design

    Kamal Choudhary;Kamal Choudhary;Kevin F. Garrity;Andrew C.E. Reid;Brian DeCost

  • Spontaneously grown GaN and AlGaN nanowires

    K.A. Bertness;A. Roshko;N.A. Sanford;J.M. Barker

  • Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering

    Ryan Beams;Luiz Gustavo Cançado;Sergiy Krylyuk;Irina Kalish

  • Photocurrent detection of the orbital angular momentum of light.

    Zhurun Ji;Wenjing Liu;Sergiy Krylyuk;Xiaopeng Fan;Xiaopeng Fan

  • Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

    N. V. Nguyen;Albert V. Davydov;Deane Chandler-Horowitz;Martin M. Frank

  • Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials

    Sam Vaziri;Eilam Yalon;Miguel Muñoz Rojo;Saurabh V. Suryavanshi

  • Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries.

    Dmitry Ruzmetov;Vladimir P Oleshko;Paul M Haney;Henri J Lezec

  • Catalyst-free growth of GaN nanowires

    Kristine A. Bertness;Norman A. Sanford;Joy Barker;John B. Schlager

  • GaN Nanowires Grown by Molecular Beam Epitaxy

    K. A. Bertness;N. A. Sanford;A. V. Davydov

  • Thermodynamics and Phase Stability in the Ga–N System

    J. Unland;B. Onderka;A. Davydov;R. Schmid-Fetzer

  • Immobilization of streptavidin on 4H-SiC for biosensor development

    Elissa H. Williams;Elissa H. Williams;Albert V. Davydov;Abhishek Motayed;Siddarth G. Sundaresan

  • MPInterfaces: A Materials Project based Python tool for high-throughput computational screening of interfacial systems

    Kiran Mathew;Kiran Mathew;Arunima K. Singh;Joshua J. Gabriel;Kamal Choudhary

  • Diameter dependent transport properties of gallium nitride nanowire field effect transistors

    Abhishek Motayed;Mark Vaudin;Albert V. Davydov;John Melngailis

  • Complementary Black Phosphorus Tunneling Field-Effect Transistors.

    Peng Wu;Tarek Ameen;Huairuo Zhang;Leonid A. Bendersky

  • Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

    Sergiy Krylyuk;Albert V. Davydov;Igor Levin

  • Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition

    Abhishek Motayed;Albert V. Davydov;Mark D. Vaudin;Igor Levin

Frequent Co-Authors

Igor Levin
Igor Levin National Institute of Standards and Technology
A. Alec Talin
A. Alec Talin Sandia National Laboratories
Leonid A. Bendersky
Leonid A. Bendersky National Institute of Standards and Technology
Mona E. Zaghloul
Mona E. Zaghloul George Washington University
Robert F. Cook
Robert F. Cook National Institute of Standards and Technology
Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette
William J. Boettinger
William J. Boettinger National Institute of Standards and Technology
Joshua A. Robinson
Joshua A. Robinson Pennsylvania State University
Ursula R. Kattner
Ursula R. Kattner National Institute of Standards and Technology
Ichiro Takeuchi
Ichiro Takeuchi University of Maryland, College Park

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