World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
51
Citations
8416
World Ranking
9992
National Ranking
2396

Robert L. Gunshor publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert L. Gunshor sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 330 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Robert L. Gunshor D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert L. Gunshor sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1990 - Fellow of American Physical Society (APS) Citation For creative and pioneering contributions to heteroepitaxy, LLVI semiconductors accomplished though imaginative applications of molecularbeam epitaxy

Overview

Robert L. Gunshor was affiliated with Purdue University West Lafayette in the United States. Their professional career included work in various aspects of physical sciences and semiconductor research.

In 1990, they were recognized as a Fellow of the American Physical Society (APS) for creative and pioneering contributions to heteroepitaxy and low-level vapor phase (LLVI) semiconductors. This recognition highlighted their imaginative applications of molecular beam epitaxy techniques.

Details regarding published papers, co-authors, specific research fields, subfields, and topics were not available, limiting a comprehensive understanding of their publication record and research collaborations.

Best Publications

  • Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

    H. Jeon;J. Ding;W. Patterson;A. V. Nurmikko

  • Graded band gap ohmic contact to p‐ZnSe

    Y. Fan;J. Han;L. He;J. Saraie

  • Blue and green diode lasers in ZnSe‐based quantum wells

    H. Jeon;J. Ding;A. V. Nurmikko;W. Xie

  • Continuous-wave, room temperature, ridge waveguide green-blue diode laser

    A. Salokatve;H. Jeon;J. Ding;M. Hovinen

  • Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode

    G. C. Hua;N. Otsuka;D. C. Grillo;Y. Fan

  • Molecular beam epitaxy of diluted magnetic semiconductor (Cd1−xMnxTe) superlattices

    L. A. Kolodziejski;T. C. Bonsett;R. L. Gunshor;S. Datta

  • Band offsets and excitons in CdTe/(Cd,Mn)Te quantum wells.

    S.-K. Chang;A. V. Nurmikko;J.-W. Wu;L. A. Kolodziejski

  • New class of materials for optical isolators

    Allen E. Turner;Robert L. Gunshor;Supriyo Datta

  • Zinc‐blende MnTe: Epilayers and quantum well structures

    S. M. Durbin;J. Han;Sungki O;M. Kobayashi

  • High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces

    N. Otsuka;L. A. Kolodziejski;R. L. Gunshor;S. Datta

  • Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers

    R. L. Gunshor;L. A. Kolodziejski;M. R. Melloch;M. Vaziri

  • Excitons in a II-VI semiconductor microcavity in the strong-coupling regime.

    P. Kelkar;V. Kozlov;H. Jeon;A. V. Nurmikko

  • Room temperature blue light emitting p‐n diodes from Zn(S,Se)‐based multiple quantum well structures

    W. Xie;D. C. Grillo;R. L. Gunshor;M. Kobayashi

  • Wide gap II‐VI superlattices of ZnSe‐Zn1−xMnxSe

    L. A. Kolodziejski;R. L. Gunshor;T. C. Bonsett;R. Venkatasubramanian

  • Structure of the ZnSe/GaAs heteroepitaxial interface

    D. Li;J. M. Gonsalves;N. Otsuka;J. Qiu

  • Two-dimensional metastable magnetic semiconductor structures

    L. A. Kolodziejski;R. L. Gunshor;N. Otsuka;B. P. Gu

  • Molecular beam epitaxy of Cd1−xMnxTe

    L. A. Kolodziejski;T. Sakamoto;R. L. Gunshor;S. Datta

  • Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

    J. Qiu;Q.‐D. Qian;R. L. Gunshor;M. Kobayashi

  • Heavy p‐doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

    J. Han;T. S. Stavrinides;M. Kobayashi;R. L. Gunshor

  • Interface localization of excitons in CdTe/Cd1-xMnxTe multiple quantum wells.

    X.-C. Zhang;S.-K. Chang;A. V. Nurmikko;L. A. Kolodziejski

  • Stimulated emission and laser oscillations in ZnSe‐Zn1−xMnxSe multiple quantum wells at ∼453 nm

    R. B. Bylsma;W. M. Becker;T. C. Bonsett;L. A. Kolodziejski

Frequent Co-Authors

Arto V. Nurmikko
Arto V. Nurmikko Brown University
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
Heonsu Jeon
Heonsu Jeon Seoul National University
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Rama Venkatasubramanian
Rama Venkatasubramanian Johns Hopkins University
Masamichi Yamanishi
Masamichi Yamanishi Hamamatsu Photonics (Japan)
J.A. Cooper
J.A. Cooper Purdue University West Lafayette
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
J. F. Schetzina
J. F. Schetzina North Carolina State University

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