J. F. Schetzina

North Carolina State University
United States

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Materials Science D-index 43 Citations 6,807 206 World Ranking 9173 National Ranking 2361

Research.com Recognitions

Awards & Achievements

1995 - Fellow of American Physical Society (APS) Citation For his extensive contributions to the development and understanding of II VI materials and devices

Overview

What is he best known for?

The fields of study J. F. Schetzina is best known for:

Semiconductor
Electron
Silicon

Sapphire and Quantum well are inherently bound to his Laser studies. He frequently studies issues relating to Laser and Sapphire. In his articles, he combines various disciplines, including Quantum well and Molecular beam epitaxy. His Condensed matter physics research is linked to Band gap and Superlattice, among other subjects. His Band gap study frequently draws connections between related disciplines such as Condensed matter physics. J. F. Schetzina merges Superlattice with Molecular beam epitaxy in his study. His research is interdisciplinary, bridging the disciplines of Wide-bandgap semiconductor and Optoelectronics. Nanotechnology connects with themes related to Cadmium telluride photovoltaics in his study. His research on Cadmium telluride photovoltaics frequently links to adjacent areas such as Nanotechnology.

His most cited work include:

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC (129 citations)
Cd_1−xMn_xTe‐CdTe multilayers grown by molecular beam epitaxy (123 citations)
High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces (116 citations)

What are the main themes of his work throughout his whole career to date

Optoelectronics connects with themes related to Diode in his study. His Nanotechnology study frequently involves adjacent topics like Cadmium telluride photovoltaics. Cadmium telluride photovoltaics connects with themes related to Nanotechnology in his study. His Layer (electronics) study frequently draws parallels with other fields, such as Molecular beam epitaxy. J. F. Schetzina applies his multidisciplinary studies on Molecular beam epitaxy and Thin film in his research. J. F. Schetzina performs integrative study on Thin film and Epitaxy. Epitaxy and Layer (electronics) are frequently intertwined in his study. His study ties his expertise on Photoluminescence together with the subject of Optics. J. F. Schetzina frequently studies issues relating to Optics and Photoluminescence.

J. F. Schetzina most often published in these fields:

Optoelectronics (94.89%)
Nanotechnology (66.42%)
Layer (electronics) (63.50%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Jan Frederick Schetzina.
(1995)

620 Citations

Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

Jan Frederick Schetzina.
(1997)

513 Citations

MBE growth and properties of ZnO on sapphire and SiC substrates

M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes.
Journal of Electronic Materials (1996)

241 Citations

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

W. C. Hughes;W. H. Rowland;M. A. L. Johnson;Shizuo Fujita.
Journal of Vacuum Science & Technology B (1995)

237 Citations

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

J. F. Muth;J. D. Brown;M. A. L. Johnson;Zhonghai Yu.
Mrs Internet Journal of Nitride Semiconductor Research (1999)

195 Citations

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

G.E. Bulman;K. Doverspike;S.T. Sheppard;T.W. Weeks.
Electronics Letters (1997)

164 Citations

Cd1−xMnxTe‐CdTe multilayers grown by molecular beam epitaxy

R. N. Bicknell;R. W. Yanka;N. C. Giles‐Taylor;D. K. Blanks.
Applied Physics Letters (1984)

160 Citations

ZnSe light‐emitting diodes

J. Ren;K. A. Bowers;B. Sneed;D. L. Dreifus.
Applied Physics Letters (1990)

159 Citations

Growth of high mobility n‐type CdTe by photoassisted molecular beam epitaxy

R. N. Bicknell;N. C. Giles;J. F. Schetzina.
Applied Physics Letters (1986)

157 Citations

Photoluminescence of CdTe: A comparison of bulk and epitaxial material

N. C. Giles‐Taylor;R. N. Bicknell;D. K. Blanks;T. H. Myers.
Journal of Vacuum Science and Technology (1985)

139 Citations

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Frequent Co-Authors

External Links

Personal Website for J. F. Schetzina