1995 - Fellow of American Physical Society (APS) Citation For his extensive contributions to the development and understanding of II VI materials and devices
Sapphire and Quantum well are inherently bound to his Laser studies. He frequently studies issues relating to Laser and Sapphire. In his articles, he combines various disciplines, including Quantum well and Molecular beam epitaxy. His Condensed matter physics research is linked to Band gap and Superlattice, among other subjects. His Band gap study frequently draws connections between related disciplines such as Condensed matter physics. J. F. Schetzina merges Superlattice with Molecular beam epitaxy in his study. His research is interdisciplinary, bridging the disciplines of Wide-bandgap semiconductor and Optoelectronics. Nanotechnology connects with themes related to Cadmium telluride photovoltaics in his study. His research on Cadmium telluride photovoltaics frequently links to adjacent areas such as Nanotechnology.
Optoelectronics connects with themes related to Diode in his study. His Nanotechnology study frequently involves adjacent topics like Cadmium telluride photovoltaics. Cadmium telluride photovoltaics connects with themes related to Nanotechnology in his study. His Layer (electronics) study frequently draws parallels with other fields, such as Molecular beam epitaxy. J. F. Schetzina applies his multidisciplinary studies on Molecular beam epitaxy and Thin film in his research. J. F. Schetzina performs integrative study on Thin film and Epitaxy. Epitaxy and Layer (electronics) are frequently intertwined in his study. His study ties his expertise on Photoluminescence together with the subject of Optics. J. F. Schetzina frequently studies issues relating to Optics and Photoluminescence.
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Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
Jan Frederick Schetzina.
Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
Jan Frederick Schetzina.
MBE growth and properties of ZnO on sapphire and SiC substrates
M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes.
Journal of Electronic Materials (1996)
Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates
W. C. Hughes;W. H. Rowland;M. A. L. Johnson;Shizuo Fujita.
Journal of Vacuum Science & Technology B (1995)
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
J. F. Muth;J. D. Brown;M. A. L. Johnson;Zhonghai Yu.
Mrs Internet Journal of Nitride Semiconductor Research (1999)
Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
G.E. Bulman;K. Doverspike;S.T. Sheppard;T.W. Weeks.
Electronics Letters (1997)
Cd1−xMnxTe‐CdTe multilayers grown by molecular beam epitaxy
R. N. Bicknell;R. W. Yanka;N. C. Giles‐Taylor;D. K. Blanks.
Applied Physics Letters (1984)
ZnSe light‐emitting diodes
J. Ren;K. A. Bowers;B. Sneed;D. L. Dreifus.
Applied Physics Letters (1990)
Growth of high mobility n‐type CdTe by photoassisted molecular beam epitaxy
R. N. Bicknell;N. C. Giles;J. F. Schetzina.
Applied Physics Letters (1986)
Photoluminescence of CdTe: A comparison of bulk and epitaxial material
N. C. Giles‐Taylor;R. N. Bicknell;D. K. Blanks;T. H. Myers.
Journal of Vacuum Science and Technology (1985)
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