J. F. Schetzina

J. F. Schetzina publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where J. F. Schetzina sits on this spectrum.

J. F. Schetzina D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where J. F. Schetzina sits on this spectrum.

Research.com Recognitions

• 1995 - Fellow of American Physical Society (APS) Citation For his extensive contributions to the development and understanding of II VI materials and devices

Overview

Best Publications

• Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

  Jan Frederick Schetzina

  620
  Citations

• Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

  Jan Frederick Schetzina

  513
  Citations

• Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

  J. F. Muth;J. D. Brown;M. A. L. Johnson;Zhonghai Yu

  260
  Citations

• Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

  W. C. Hughes;W. H. Rowland;M. A. L. Johnson;Shizuo Fujita

  253
  Citations

• MBE growth and properties of ZnO on sapphire and SiC substrates

  M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes

  242
  Citations

• Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

  G.E. Bulman;K. Doverspike;S.T. Sheppard;T.W. Weeks

  164
  Citations

• Cd1−xMnxTe‐CdTe multilayers grown by molecular beam epitaxy

  R. N. Bicknell;R. W. Yanka;N. C. Giles‐Taylor;D. K. Blanks

  161
  Citations

• ZnSe light‐emitting diodes

  J. Ren;K. A. Bowers;B. Sneed;D. L. Dreifus

  161
  Citations

• Growth of high mobility n‐type CdTe by photoassisted molecular beam epitaxy

  R. N. Bicknell;N. C. Giles;J. F. Schetzina

  158
  Citations

• Photoluminescence of CdTe: A comparison of bulk and epitaxial material

  N. C. Giles‐Taylor;R. N. Bicknell;D. K. Blanks;T. H. Myers

  147
  Citations

• High‐brightness blue and green light‐emitting diodes

  D. B. Eason;Z. Yu;W. C. Hughes;W. H. Roland

  141
  Citations

• Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

  R. N. Bicknell;R. W. Yanka;N. C. Giles;J. F. Schetzina

  137
  Citations

• High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces

  N. Otsuka;L. A. Kolodziejski;R. L. Gunshor;S. Datta

  136
  Citations

• Optical properties of polycrystalline CdTe films

  T. H. Myers;S. W. Edwards;J. F. Schetzina

  134
  Citations

• Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures

  Y. Lansari;J. Ren;B. Sneed;K. A. Bowers

  134
  Citations

• Growth of CdTe films on sapphire by molecular beam epitaxy

  T. H. Myers;Yawcheng Lo;R. N. Bicknell;J. F. Schetzina

  120
  Citations

• Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

  J.D. Brown;Zhonghai Yu;J. Matthews;S. Harney

  112
  Citations

• p‐type CdTe epilayers grown by photoassisted molecular beam epitaxy

  R. N. Bicknell;N. C. Giles;J. F. Schetzina

  108
  Citations

• Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxy

  R. L. Harper;S. Hwang;N. C. Giles;J. F. Schetzina

  101
  Citations

• Growth of device quality GaN at 550 °C by atomic layer epitaxy

  N. H. Karam;T. Parodos;P. Colter;D. McNulty

  92
  Citations

• MBE Growth and Properties of ZnO on Sapphire and SiC Substrates

  M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes

  0
  Citations