J. F. Schetzina

Research.com Recognitions

• 1995 - Fellow of American Physical Society (APS) Citation For his extensive contributions to the development and understanding of II VI materials and devices

Overview

Best Publications

• Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

  Jan Frederick Schetzina

  620
  Citations

• Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

  Jan Frederick Schetzina

  513
  Citations

• Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

  J. F. Muth;J. D. Brown;M. A. L. Johnson;Zhonghai Yu

  260
  Citations

• Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

  W. C. Hughes;W. H. Rowland;M. A. L. Johnson;Shizuo Fujita

  253
  Citations

• MBE growth and properties of ZnO on sapphire and SiC substrates

  M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes

  242
  Citations

• Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

  G.E. Bulman;K. Doverspike;S.T. Sheppard;T.W. Weeks

  164
  Citations

• Cd1−xMnxTe‐CdTe multilayers grown by molecular beam epitaxy

  R. N. Bicknell;R. W. Yanka;N. C. Giles‐Taylor;D. K. Blanks

  161
  Citations

• ZnSe light‐emitting diodes

  J. Ren;K. A. Bowers;B. Sneed;D. L. Dreifus

  161
  Citations

• Growth of high mobility n‐type CdTe by photoassisted molecular beam epitaxy

  R. N. Bicknell;N. C. Giles;J. F. Schetzina

  158
  Citations

• Photoluminescence of CdTe: A comparison of bulk and epitaxial material

  N. C. Giles‐Taylor;R. N. Bicknell;D. K. Blanks;T. H. Myers

  147
  Citations

• High‐brightness blue and green light‐emitting diodes

  D. B. Eason;Z. Yu;W. C. Hughes;W. H. Roland

  141
  Citations

• Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

  R. N. Bicknell;R. W. Yanka;N. C. Giles;J. F. Schetzina

  137
  Citations

• High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces

  N. Otsuka;L. A. Kolodziejski;R. L. Gunshor;S. Datta

  136
  Citations

• Optical properties of polycrystalline CdTe films

  T. H. Myers;S. W. Edwards;J. F. Schetzina

  134
  Citations

• Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures

  Y. Lansari;J. Ren;B. Sneed;K. A. Bowers

  134
  Citations

• Growth of CdTe films on sapphire by molecular beam epitaxy

  T. H. Myers;Yawcheng Lo;R. N. Bicknell;J. F. Schetzina

  120
  Citations

• Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

  J.D. Brown;Zhonghai Yu;J. Matthews;S. Harney

  112
  Citations

• p‐type CdTe epilayers grown by photoassisted molecular beam epitaxy

  R. N. Bicknell;N. C. Giles;J. F. Schetzina

  108
  Citations

• Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxy

  R. L. Harper;S. Hwang;N. C. Giles;J. F. Schetzina

  101
  Citations

• Growth of device quality GaN at 550 °C by atomic layer epitaxy

  N. H. Karam;T. Parodos;P. Colter;D. McNulty

  92
  Citations

• MBE Growth and Properties of ZnO on Sapphire and SiC Substrates

  M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes

  0
  Citations