Nobuo Otsuka

Overview

Best Publications

• Gallium arsenide and other compound semiconductors on silicon

  S. F. Fang;K. Adomi;S. Iyer;H. Morkoç

  814
  Citations

• Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

  A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky

  577
  Citations

• Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

  R. Fischer;H. Morkoç;D. A. Neumann;H. Zabel

  340
  Citations

• Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

  M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren

  302
  Citations

• Graded band gap ohmic contact to p‐ZnSe

  Y. Fan;J. Han;L. He;J. Saraie

  301
  Citations

• Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

  N. Samarth;H. Luo;J. K. Furdyna;S. B. Qadri

  266
  Citations

• Carrier lifetime versus anneal in low temperature growth GaAs

  E. S. Harmon;M. R. Melloch;J. M. Woodall;D. D. Nolte

  240
  Citations

• Dislocation reduction in epitaxial GaAs on Si(100)

  R. Fischer;D. Neuman;H. Zabel;H. Morkoç

  224
  Citations

• Blue and green diode lasers in ZnSe‐based quantum wells

  H. Jeon;J. Ding;A. V. Nurmikko;W. Xie

  222
  Citations

• Continuous-wave, room temperature, ridge waveguide green-blue diode laser

  A. Salokatve;H. Jeon;J. Ding;M. Hovinen

  195
  Citations

• Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

  A. C. Warren;N. Katzenellenbogen;D. Grischkowsky;J. M. Woodall

  190
  Citations

• Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlattices

  N. Samarth;H. Luo;J. K. Furdyna;R. G. Alonso

  183
  Citations

• Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates

  C. Choi;N. Otsuka;G. Munns;R. Houdre

  182
  Citations

• Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode

  G. C. Hua;N. Otsuka;D. C. Grillo;Y. Fan

  178
  Citations

• Low-Temperature Grown III-V Materials

  M. R. Melloch;J. M. Woodall;E. S. Harmon;N. Otsuka

  176
  Citations

• Ordering in GaAs1−xSbx grown by molecular beam epitaxy

  Yeong‐Eon Ihm;N. Otsuka;J. Klem;H. Morkoç

  159
  Citations

• Molecular beam epitaxy of diluted magnetic semiconductor (Cd1−xMnxTe) superlattices

  L. A. Kolodziejski;T. C. Bonsett;R. L. Gunshor;S. Datta

  158
  Citations

• High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

  N. Otsuka;C. Choi;Y. Nakamura;S. Nagakura

  147
  Citations

• Zinc‐blende MnTe: Epilayers and quantum well structures

  S. M. Durbin;J. Han;Sungki O;M. Kobayashi

  143
  Citations

• High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces

  N. Otsuka;L. A. Kolodziejski;R. L. Gunshor;S. Datta

  136
  Citations

• Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers

  R. L. Gunshor;L. A. Kolodziejski;M. R. Melloch;M. Vaziri

  133
  Citations