World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
9762
World Ranking
3060
National Ranking
1151

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Voltage

J.A. Cooper spends much of his time researching Wide-bandgap semiconductor, Optoelectronics, Power MOSFET, Silicon carbide and MOSFET. The Wide-bandgap semiconductor study combines topics in areas such as Thermal oxidation, Electrical engineering and Capacitor. His biological study spans a wide range of topics, including Engineering physics and Reliability.

His work in Optoelectronics is not limited to one particular discipline; it also encompasses Transistor. His Silicon carbide study combines topics from a wide range of disciplines, such as Doping and Analytical chemistry. He focuses mostly in the field of MOSFET, narrowing it down to matters related to Electronic engineering and, in some cases, Voltage and Ion implantation.

His most cited work include:

  • Status and prospects for SiC power MOSFETs (327 citations)
  • SiC power-switching devices-the second electronics revolution? (258 citations)
  • High-voltage double-implanted power MOSFET's in 6H-SiC (245 citations)

What are the main themes of his work throughout his whole career to date?

J.A. Cooper mainly investigates Optoelectronics, Electrical engineering, Wide-bandgap semiconductor, Silicon carbide and Transistor. His Optoelectronics research incorporates themes from Field-effect transistor and Power MOSFET, MOSFET. His study in the fields of Power semiconductor device, Bipolar junction transistor, High voltage and Voltage under the domain of Electrical engineering overlaps with other disciplines such as Dynamic random-access memory.

His studies deal with areas such as Electron mobility, Ion implantation and Electronic engineering as well as Wide-bandgap semiconductor. His Silicon carbide study incorporates themes from Non-volatile memory, Electrical resistivity and conductivity, Semiconductor and Argon. His research investigates the link between Transistor and topics such as Integrated circuit that cross with problems in Transistor–transistor logic and Electronic circuit.

He most often published in these fields:

  • Optoelectronics (68.82%)
  • Electrical engineering (45.16%)
  • Wide-bandgap semiconductor (33.33%)

What were the highlights of his more recent work (between 2006-2013)?

  • Electrical engineering (45.16%)
  • Optoelectronics (68.82%)
  • Silicon carbide (31.18%)

In recent papers he was focusing on the following fields of study:

J.A. Cooper mainly focuses on Electrical engineering, Optoelectronics, Silicon carbide, Wide-bandgap semiconductor and Power semiconductor device. His work is connected to Power MOSFET and Bipolar junction transistor, as a part of Electrical engineering. J.A. Cooper has researched Optoelectronics in several fields, including Transistor and MOSFET.

His Voltage research extends to Silicon carbide, which is thematically connected. J.A. Cooper regularly links together related areas like Electronic engineering in his Wide-bandgap semiconductor studies. His research on Power semiconductor device also deals with topics like

  • Insulated-gate bipolar transistor which intersects with area such as High voltage, Epitaxy and Diode,
  • Commutation, Efficient energy use, Engineering physics, Schottky diode and Renewable energy most often made with reference to Power electronics.

Between 2006 and 2013, his most popular works were:

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC (166 citations)
  • High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers (69 citations)
  • Optimization of on -State and Switching Performances for 15–20-kV 4H-SiC IGBTs (56 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Power semiconductor device, Insulated-gate bipolar transistor and JFET. His Electron mobility and Wide-bandgap semiconductor investigations are all subjects of Optoelectronics research. In his research, Graphene is intimately related to Silicon, which falls under the overarching field of Electron mobility.

His Wide-bandgap semiconductor study combines topics in areas such as Diode, Silicon carbide, Bipolar junction transistor and Epitaxy. His research on JFET frequently connects to adjacent areas such as MOSFET. His Logic gate research is multidisciplinary, incorporating elements of Low voltage, Power MOSFET and Breakdown voltage, Avalanche breakdown.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • SiC power-switching devices-the second electronics revolution?

    J.A. Cooper;A. Agarwal

  • High-voltage double-implanted power MOSFET's in 6H-SiC

    J.N. Shenoy;J.A. Cooper;M.R. Melloch

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y Q Wu;P. D. Ye;Michael A Capano;Yi Xuan

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

    K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y. Q. Wu;P. D. Ye;M.A. Capano;Y. Xuan

  • Characterization and optimization of the SiO 2 /SiC metal-oxide semiconductor interface

    J. N. Shenoy;G. L. Chindalore;M. R. Melloch;J. A. Cooper

  • Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

    Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung

  • High-voltage accumulation-layer UMOSFET's in 4H-SiC

    Unknown

  • 2.6 kV 4H-SiC lateral DMOSFETs

    J. Spitz;M.R. Melloch;J.A. Cooper;M.A. Capano

  • Surface roughening in ion implanted 4H-silicon carbide

    M. A. Capano;S. Ryu;J. A. Cooper;N. Nordell

  • Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

    Michael A. Capano;James A. Cooper;M.R. Melloch;Adam W. Saxler

  • Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

    M. A. Capano;S. Ryo;M. R. Melloch;J. A. Cooper

  • A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC

    M. Matin;A. Saha;J.A. Cooper

  • High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers

    Xiaokun Wang;J.A. Cooper

  • Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC

    M.M. Mathur;J.A. Cooper

  • High-voltage (3 kV) UMOSFETs in 4H-SiC

    Y. Li;J.A.Jr. Cooper;M.A. Capano

  • Monolithic NMOS digital integrated circuits in 6H-SiC

    W. Xie;J.A. Cooper;M.R. Melloch

  • METAL-OXIDE-SEMICONDUCTOR CAPACITORS FORMED BY OXIDATION OF POLYCRYSTALLINE SILICON ON SIC

    J. Tan;M. K. Das;J. A. Cooper;M. R. Melloch

Frequent Co-Authors

Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
Salah M. Bedair
Salah M. Bedair North Carolina State University
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Sigbritt Karlsson
Sigbritt Karlsson Royal Institute of Technology

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