World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
9762
World Ranking
3060
National Ranking
1152

J.A. Cooper publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where J.A. Cooper sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 192 publications — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

J.A. Cooper D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where J.A. Cooper sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Voltage

J.A. Cooper spends much of his time researching Wide-bandgap semiconductor, Optoelectronics, Power MOSFET, Silicon carbide and MOSFET. The Wide-bandgap semiconductor study combines topics in areas such as Thermal oxidation, Electrical engineering and Capacitor. His biological study spans a wide range of topics, including Engineering physics and Reliability.

His work in Optoelectronics is not limited to one particular discipline; it also encompasses Transistor. His Silicon carbide study combines topics from a wide range of disciplines, such as Doping and Analytical chemistry. He focuses mostly in the field of MOSFET, narrowing it down to matters related to Electronic engineering and, in some cases, Voltage and Ion implantation.

His most cited work include:

  • Status and prospects for SiC power MOSFETs (327 citations)
  • SiC power-switching devices-the second electronics revolution? (258 citations)
  • High-voltage double-implanted power MOSFET's in 6H-SiC (245 citations)

What are the main themes of his work throughout his whole career to date?

J.A. Cooper mainly investigates Optoelectronics, Electrical engineering, Wide-bandgap semiconductor, Silicon carbide and Transistor. His Optoelectronics research incorporates themes from Field-effect transistor and Power MOSFET, MOSFET. His study in the fields of Power semiconductor device, Bipolar junction transistor, High voltage and Voltage under the domain of Electrical engineering overlaps with other disciplines such as Dynamic random-access memory.

His studies deal with areas such as Electron mobility, Ion implantation and Electronic engineering as well as Wide-bandgap semiconductor. His Silicon carbide study incorporates themes from Non-volatile memory, Electrical resistivity and conductivity, Semiconductor and Argon. His research investigates the link between Transistor and topics such as Integrated circuit that cross with problems in Transistor–transistor logic and Electronic circuit.

He most often published in these fields:

  • Optoelectronics (68.82%)
  • Electrical engineering (45.16%)
  • Wide-bandgap semiconductor (33.33%)

What were the highlights of his more recent work (between 2006-2013)?

  • Electrical engineering (45.16%)
  • Optoelectronics (68.82%)
  • Silicon carbide (31.18%)

In recent papers he was focusing on the following fields of study:

J.A. Cooper mainly focuses on Electrical engineering, Optoelectronics, Silicon carbide, Wide-bandgap semiconductor and Power semiconductor device. His work is connected to Power MOSFET and Bipolar junction transistor, as a part of Electrical engineering. J.A. Cooper has researched Optoelectronics in several fields, including Transistor and MOSFET.

His Voltage research extends to Silicon carbide, which is thematically connected. J.A. Cooper regularly links together related areas like Electronic engineering in his Wide-bandgap semiconductor studies. His research on Power semiconductor device also deals with topics like

  • Insulated-gate bipolar transistor which intersects with area such as High voltage, Epitaxy and Diode,
  • Commutation, Efficient energy use, Engineering physics, Schottky diode and Renewable energy most often made with reference to Power electronics.

Between 2006 and 2013, his most popular works were:

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC (166 citations)
  • High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers (69 citations)
  • Optimization of on -State and Switching Performances for 15–20-kV 4H-SiC IGBTs (56 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Power semiconductor device, Insulated-gate bipolar transistor and JFET. His Electron mobility and Wide-bandgap semiconductor investigations are all subjects of Optoelectronics research. In his research, Graphene is intimately related to Silicon, which falls under the overarching field of Electron mobility.

His Wide-bandgap semiconductor study combines topics in areas such as Diode, Silicon carbide, Bipolar junction transistor and Epitaxy. His research on JFET frequently connects to adjacent areas such as MOSFET. His Logic gate research is multidisciplinary, incorporating elements of Low voltage, Power MOSFET and Breakdown voltage, Avalanche breakdown.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • SiC power-switching devices-the second electronics revolution?

    J.A. Cooper;A. Agarwal

  • High-voltage double-implanted power MOSFET's in 6H-SiC

    J.N. Shenoy;J.A. Cooper;M.R. Melloch

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y Q Wu;P. D. Ye;Michael A Capano;Yi Xuan

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

    K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y. Q. Wu;P. D. Ye;M.A. Capano;Y. Xuan

  • Characterization and optimization of the SiO 2 /SiC metal-oxide semiconductor interface

    J. N. Shenoy;G. L. Chindalore;M. R. Melloch;J. A. Cooper

  • Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

    Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung

  • High-voltage accumulation-layer UMOSFET's in 4H-SiC

    Unknown

  • 2.6 kV 4H-SiC lateral DMOSFETs

    J. Spitz;M.R. Melloch;J.A. Cooper;M.A. Capano

  • Surface roughening in ion implanted 4H-silicon carbide

    M. A. Capano;S. Ryu;J. A. Cooper;N. Nordell

  • Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

    Michael A. Capano;James A. Cooper;M.R. Melloch;Adam W. Saxler

  • Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

    M. A. Capano;S. Ryo;M. R. Melloch;J. A. Cooper

  • A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC

    M. Matin;A. Saha;J.A. Cooper

  • High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers

    Xiaokun Wang;J.A. Cooper

  • Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC

    M.M. Mathur;J.A. Cooper

  • High-voltage (3 kV) UMOSFETs in 4H-SiC

    Y. Li;J.A.Jr. Cooper;M.A. Capano

  • Monolithic NMOS digital integrated circuits in 6H-SiC

    W. Xie;J.A. Cooper;M.R. Melloch

  • METAL-OXIDE-SEMICONDUCTOR CAPACITORS FORMED BY OXIDATION OF POLYCRYSTALLINE SILICON ON SIC

    J. Tan;M. K. Das;J. A. Cooper;M. R. Melloch

Frequent Co-Authors

Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
Salah M. Bedair
Salah M. Bedair North Carolina State University
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Sigbritt Karlsson
Sigbritt Karlsson Royal Institute of Technology

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