John W. Palmour

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard;K. Doverspike;W.L. Pribble;S.T. Allen.
IEEE Electron Device Letters (1999)

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard;K. Doverspike;W.L. Pribble;S.T. Allen.
IEEE Electron Device Letters (1999)

Method of preparing silicon carbide for crystal growth

Palmour John W;Kong Hua-Shuang;Edmond John A.
(1996)

Method of preparing silicon carbide for crystal growth

Palmour John W;Kong Hua-Shuang;Edmond John A.
(1996)

Silicon carbide high-power devices

C.E. Weitzel;J.W. Palmour;C.H. Carter;K. Moore.
IEEE Transactions on Electron Devices (1996)

Silicon carbide high-power devices

C.E. Weitzel;J.W. Palmour;C.H. Carter;K. Moore.
IEEE Transactions on Electron Devices (1996)

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

R.F. Davis;G. Kelner;M. Shur;J.W. Palmour.
Proceedings of the IEEE (1991)

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

R.F. Davis;G. Kelner;M. Shur;J.W. Palmour.
Proceedings of the IEEE (1991)