World's Best Scientists 2026 revealed!
John W. Palmour

John W. Palmour

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
21451
World Ranking
619
National Ranking
278

Materials Science

D-Index
77
Citations
21756
World Ranking
3123
National Ranking
874

John W. Palmour publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where John W. Palmour sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 504 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

John W. Palmour D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where John W. Palmour sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 77 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

John W. Palmour was affiliated with Wolfspeed, Inc. in the United States. Their research primarily focused on engineering, with a specialization in electrical and electronic engineering. The work covered several subfields including condensed matter physics, electronic, optical and magnetic materials, and materials chemistry.

The scientific topics addressed by Palmour included:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Radiation Effects in Electronics
  • Electrostatic Discharge in Electronics
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design

Their recent publications were presented in notable venues such as "Materials Science Forum," "2022 IEEE International Reliability Physics Symposium (IRPS)," and "Key Engineering Materials." Key papers included:

  • "DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • "Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • "Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs," 2023, Materials Science Forum
  • "Reliability and Standardization for SiC Power Devices," 2023, Materials Science Forum
  • "Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout," 2022, Materials Science Forum

Palmour frequently collaborated with several researchers, publishing multiple works together. Notable coauthors included Daniel J. Lichtenwalner, D. A. Gajewski, Brett Hull, Sei-Hyung Ryu, and Scott T. Allen.

Best Publications

  • Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

    G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  • High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

    S.T. Sheppard;K. Doverspike;W.L. Pribble;S.T. Allen

  • Method of preparing silicon carbide for crystal growth

    Palmour John W;Kong Hua-Shuang;Edmond John A

  • Silicon carbide high-power devices

    C.E. Weitzel;J.W. Palmour;C.H. Carter;K. Moore

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

    R.F. Davis;G. Kelner;M. Shur;J.W. Palmour

  • Nitride based transistors on semi-insulating silicon carbide substrates

    Scott Thomas Sheppard;Scott Thomas Allen;John Williams Palmour

  • Insulator investigation on SiC for improved reliability

    L.A. Lipkin;J.W. Palmour

  • Conductivity Anisotropy in Epitaxial 6H and 4H Sic

    William J. Schaffer;G. H. Negley;K. G. Irvine;J. W. Palmour

  • Dry etching of silicon carbide

    John W. Palmour

  • Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

    J. W. Palmour;L. Cheng;V. Pala;E. V. Brunt

  • Improved oxidation procedures for reduced SiO 2 /SiC defects

    L. A. Lipkin;J. W. Palmour

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

    Samir Hazra;Ankan De;Lin Cheng;John Palmour

  • Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

    R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong

  • SILICIUMCARBID-METALL-ISOLATOR-HALBLEITER- FELDEFFEKTTRANSISTOR

    Singh Ranbir;Palmour W

  • Power MOSFET in silicon carbide

    John W. Palmour

  • N2O Processing Improves the 4H-SiC:SiO2 Interface

    Lori A. Lipkin;Mrinal K. Das;John W. Palmour

  • 6H–silicon carbide devices and applications

    J.W. Palmour;J.A. Edmond;H.S. Kong;C.H. Carter

  • 1800 V NPN bipolar junction transistors in 4H-SiC

    Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour

Frequent Co-Authors

Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Pavel Ivanov
Pavel Ivanov Brigham and Women's Hospital
Sergey Rumyantsev
Sergey Rumyantsev Polish Academy of Sciences
Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Ranbir Singh
Ranbir Singh Indian Institute of Technology Mandi
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Marek Skowronski
Marek Skowronski Carnegie Mellon University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For professionals interested in advancing their knowledge in Electronics and Electrical Engineering, exploring online degrees for working adults is an excellent option. These programs offer flexible schedules to balance study with career and personal commitments.

Those considering a shift towards education or training roles can benefit from a master's in instructional design. This degree prepares graduates to design effective learning experiences, a valuable skill in technical fields like engineering.

Competency-based education is gaining traction, allowing students to progress by demonstrating skills rather than spending fixed time in class. Investigating the list of competency-based colleges can help identify programs that align with self-paced and skill-focused learning.

Additionally, tailored programs such as online degrees for military spouses provide crucial support and flexibility for this unique community, ensuring education remains accessible despite frequent relocations or other challenges.

Best Scientists Citing John W. Palmour

Recently Published Articles