World's Best Scientists 2026 revealed!
John W. Palmour

John W. Palmour

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
21451
World Ranking
619
National Ranking
277

Materials Science

D-Index
77
Citations
21756
World Ranking
3125
National Ranking
876

Overview

John W. Palmour was affiliated with Wolfspeed, Inc. in the United States. Their research primarily focused on engineering, with a specialization in electrical and electronic engineering. The work covered several subfields including condensed matter physics, electronic, optical and magnetic materials, and materials chemistry.

The scientific topics addressed by Palmour included:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Radiation Effects in Electronics
  • Electrostatic Discharge in Electronics
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design

Their recent publications were presented in notable venues such as "Materials Science Forum," "2022 IEEE International Reliability Physics Symposium (IRPS)," and "Key Engineering Materials." Key papers included:

  • "DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • "Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs," 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • "Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs," 2023, Materials Science Forum
  • "Reliability and Standardization for SiC Power Devices," 2023, Materials Science Forum
  • "Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout," 2022, Materials Science Forum

Palmour frequently collaborated with several researchers, publishing multiple works together. Notable coauthors included Daniel J. Lichtenwalner, D. A. Gajewski, Brett Hull, Sei-Hyung Ryu, and Scott T. Allen.

Best Publications

  • Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

    G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  • High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

    S.T. Sheppard;K. Doverspike;W.L. Pribble;S.T. Allen

  • Method of preparing silicon carbide for crystal growth

    Palmour John W;Kong Hua-Shuang;Edmond John A

  • Silicon carbide high-power devices

    C.E. Weitzel;J.W. Palmour;C.H. Carter;K. Moore

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

    R.F. Davis;G. Kelner;M. Shur;J.W. Palmour

  • Nitride based transistors on semi-insulating silicon carbide substrates

    Scott Thomas Sheppard;Scott Thomas Allen;John Williams Palmour

  • Insulator investigation on SiC for improved reliability

    L.A. Lipkin;J.W. Palmour

  • Conductivity Anisotropy in Epitaxial 6H and 4H Sic

    William J. Schaffer;G. H. Negley;K. G. Irvine;J. W. Palmour

  • Dry etching of silicon carbide

    John W. Palmour

  • Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

    J. W. Palmour;L. Cheng;V. Pala;E. V. Brunt

  • Improved oxidation procedures for reduced SiO 2 /SiC defects

    L. A. Lipkin;J. W. Palmour

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

    Samir Hazra;Ankan De;Lin Cheng;John Palmour

  • Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

    R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong

  • SILICIUMCARBID-METALL-ISOLATOR-HALBLEITER- FELDEFFEKTTRANSISTOR

    Singh Ranbir;Palmour W

  • Power MOSFET in silicon carbide

    John W. Palmour

  • N2O Processing Improves the 4H-SiC:SiO2 Interface

    Lori A. Lipkin;Mrinal K. Das;John W. Palmour

  • 6H–silicon carbide devices and applications

    J.W. Palmour;J.A. Edmond;H.S. Kong;C.H. Carter

  • 1800 V NPN bipolar junction transistors in 4H-SiC

    Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour

Frequent Co-Authors

Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Pavel Ivanov
Pavel Ivanov Brigham and Women's Hospital
Sergey Rumyantsev
Sergey Rumyantsev Polish Academy of Sciences
Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Ranbir Singh
Ranbir Singh Indian Institute of Technology Mandi
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Marek Skowronski
Marek Skowronski Carnegie Mellon University

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