World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
64
Citations
16797
World Ranking
5824
National Ranking
1501

bernd keller publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where bernd keller sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 175 publications — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

bernd keller D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where bernd keller sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Bernd Keller is affiliated with Cree, a company based in the United States. Their research focus pertains to the location of this primary affiliation.

There is no publicly available data on recent papers authored by Bernd Keller, nor are there records of frequent co-authors or recurring publication venues associated with their work.

Information regarding book publications by Bernd Keller is not present, and no specific data exists about the main fields or subfields of study related to their research activities.

Additionally, there are no records of main topics covered in their work or awards received. The lack of detailed publication and research topic data limits insight into their scientific contributions or areas of expertise.

Best Publications

  • Light emitting diodes including optically matched substrates

    David B. Slater;Robert C. Glass;Charles M. Swoboda;Bernd Keller

  • Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

    B. Heying;X. H. Wu;S. Keller;Y. Li

  • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

    J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas

  • Very-high power density AlGaN/GaN HEMTs

    Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh

  • Wafer level phosphor coating method and devices fabricated utilizing method

    Ashay Chitnis;James Ibbetson;Arpan Chakraborty;Eric J. Tarsa

  • Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

    X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller

  • Close loop electrophoretic deposition of phosphors on semiconductor substrates

    Eric Tarsa;Michael Leung;Bernd Keller;Robert Underwood

  • VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS

    Y.‐F. Wu;B. P. Keller;S. Keller;D. Kapolnek

  • Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

    D. Kapolnek;X. H. Wu;B. Heying;S. Keller

  • White light emitting lamp

    Eric Joseph Tarsa;Michael Dunn;Bernd Keller

  • Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same

    Nicholas W. Medendorp;Mark Terrence McClear;Bernd P. Keller;George R. Brandes

  • Solid state lighting component

    Thomas Yuan;Bernd Keller;James Ibbetson;Eric J. Tarsa

  • High Al-content AlGaN/GaN MODFETs for ultrahigh performance

    Y.-F. Wu;B.P. Keller;P. Fini;S. Keller

  • Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

    S. Keller;B. P. Keller;Y.‐F. Wu;B. Heying

  • Low interface trap density for remote plasma deposited SiO2 on n‐type GaN

    H. C. Casey;G. G. Fountain;R. G. Alley;B. P. Keller

  • GaN microwave electronics

    U.K. Mishra;Yi-Feng Wu;B.P. Keller;S. Keller

  • Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices

    Ban P. Loh;Bernd Keller;Nicholas W. Medendorp

  • Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

    X. H. Wu;D. Kapolnek;E. J. Tarsa;B. Heying

  • LIGHT EMITTING DEVICE HAVING AN ENCAPSULANT WITH SCATTERER TO TAILOR SPATIAL EMISSION PATTERN AND COLOR UNIFORMITY

    Chakraborty Arpan;Keller Bernd

  • Leadframe-based packages for solid state emitting devices

    Ban P. Loh;Bernd Keller;Nicholas W. Medendorp

Frequent Co-Authors

Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Gerald H. Negley
Gerald H. Negley Wolfspeed, Inc.
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Antony Paul Van de Ven
Antony Paul Van de Ven Wolfspeed, Inc.
Yifeng Wu
Yifeng Wu Transphorm Inc.
Peter S. Andrews
Peter S. Andrews Wolfspeed, Inc.
James S. Speck
James S. Speck University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
John Adam Edmond
John Adam Edmond Wolfspeed, Inc.
Paul T. Fini
Paul T. Fini Raytheon (United States)

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