John Adam Edmond focuses on Optoelectronics, Light-emitting diode, Nitride, Substrate and Layer. In his study, which falls under the umbrella issue of Optoelectronics, Electronic engineering is strongly linked to Gallium nitride. The concepts of his Light-emitting diode study are interwoven with issues in Diode, Substrate and Wafer.
He has included themes like Multiple quantum, Band gap and Superlattice in his Nitride study. As a part of the same scientific study, John Adam Edmond usually deals with the Substrate, concentrating on Silicon carbide and frequently concerns with Ohmic contact, Radiant flux and Nanometre. His study in the field of Depletion region and Light emitting device also crosses realms of Conductivity and Extraction.
His primary areas of investigation include Optoelectronics, Light-emitting diode, Layer, Nitride and Optics. His Optoelectronics research includes elements of Electrical conductor, Ohmic contact, Substrate and Substrate. His Light-emitting diode research includes themes of Diode, Epitaxy and LED lamp.
His study in the field of Semiconductor device is also linked to topics like Wire bonding. The study incorporates disciplines such as Semiconductor structure, Silicon carbide and Active layer in addition to Nitride. His Optics research is multidisciplinary, incorporating perspectives in Perpendicular and Phosphor.
John Adam Edmond mostly deals with Optoelectronics, Light-emitting diode, Optics, Substrate and Enclosure. John Adam Edmond studied Optoelectronics and Light emitting device that intersect with Phosphor. His Light-emitting diode research is multidisciplinary, relying on both Barrier layer and Diode.
His work deals with themes such as Ohmic contact, Substrate and Reflectivity, which intersect with Barrier layer. His work on Light extraction in LEDs as part of his general Optics study is frequently connected to Solid-state, thereby bridging the divide between different branches of science. His research in Substrate intersects with topics in Lens, Die and Parallel.
His primary scientific interests are in Optoelectronics, Optics, Light-emitting diode, Substrate and Die. In general Optics study, his work on Light extraction in LEDs, Led array and LED lamp often relates to the realm of Enclosure and Solid-state, thereby connecting several areas of interest. The various areas that John Adam Edmond examines in his Led array study include Electrical conductor, Lead frame and Core.
He has researched Light-emitting diode in several fields, including Barrier layer, Reflectivity and Insulator. His Substrate study integrates concerns from other disciplines, such as Anode and Electrically conductive. His studies deal with areas such as Lens and Reflective layer as well as Flip chip.
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Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
John Adam Edmond;Hua-Shuang Kong;Kathleen Marie Doverspike;Michelle Turner Leonard.
Method of forming a light emitting diode having an improved external extraction based upon crystallographic faceted surfaces
Edmond John A;Slater David B;Kong Hua-Shuang;Donofrio Matthew.
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
Hua-Shuang Kong;John Adam Edmond;Kevin Ward Haberern;David Todd Emerson.
Vertical Geometry InGaN LED
Kathleen Marie Doverspike;John Adam Edmond;Hua-Shuang Kong;Heidi Marie Dieringer.
Method of removing substrate for high light extraction led
Edmond John;エドモンド ジョン.
Group iii nitride led with undoped cladding layer and multiple quantum well
John Adam Edmond;Kathleen Marie Doverspike;Hua-Shuang Kong;Michael John Bergmann.
Nickel tin bonding system with barrier layer for semiconductor wafers and devices
Matthew Donofrio;David B. Slater;John A. Edmond;Hua-Shuang Kong.
High efficiency GaN-based LEDs and lasers on SiC
John Edmond;Amber Abare;Mike Bergman;Jayesh Bharathan.
Journal of Crystal Growth (2004)
Gas cooled led lamp
Christopher P. Hussell;John Adam Edmond;Gerald H. Negley;Curt Progl.
High Efficiency Group III Nitride LED with Lenticular Surface
John Adam Edmond;David Beardsley Slater;Jayesh Bharathan;Matthew Donofrio.
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