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John Adam Edmond

John Adam Edmond

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8129
World Ranking
3106
National Ranking
1165

Overview

John Adam Edmond is a researcher affiliated with Wolfspeed, Inc. in the United States. Their main fields of study include Physics and Astronomy as well as Materials Science, with a particular focus on subfields such as Condensed Matter Physics, Materials Chemistry, and Atomic and Molecular Physics, and Optics.

The scientist's research primarily covers topics related to GaN-based semiconductor devices and materials, machine learning applications in materials science, and semiconductor quantum structures and devices. These areas indicate an emphasis on advanced materials and the integration of computational methods within materials research.

Frequent collaborators include F. A. Ponce, Russell D. Dupuis, and Shuji Nakamura, reflecting a network of professionals working in semiconductor and materials science fields.

John Adam Edmond has contributed to academic literature through various papers, though specific titles and venues of recent papers are not listed. However, they have authored a book published by Springer International Publishing entitled Gallium Nitride and Related Materials, scheduled for 2025, which has already garnered citations, indicating its relevance to the field.

Frequent publication venues are not specifically documented for this scientist, but the breadth of their collaborative network and book publication suggests linkage to well-regarded sources in materials science and applied physics.

  • Frequent coauthors: F. A. Ponce, Russell D. Dupuis, Shuji Nakamura
  • Main fields of study: Physics and Astronomy, Materials Science
  • Subfields of study: Condensed Matter Physics, Materials Chemistry, Atomic and Molecular Physics, and Optics
  • Main topics: GaN-based semiconductor devices and materials, Machine Learning in Materials Science, Semiconductor Quantum Structures and Devices

Best Publications

  • Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

    John Adam Edmond;Hua-Shuang Kong;Kathleen Marie Doverspike;Michelle Turner Leonard

  • Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

    R.F. Davis;G. Kelner;M. Shur;J.W. Palmour

  • Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

    R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong

  • Method of forming a light emitting diode having an improved external extraction based upon crystallographic faceted surfaces

    Edmond John A;Slater David B;Kong Hua-Shuang;Donofrio Matthew

  • Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures

    Hua-Shuang Kong;John Adam Edmond;Kevin Ward Haberern;David Todd Emerson

  • 6H–silicon carbide devices and applications

    J.W. Palmour;J.A. Edmond;H.S. Kong;C.H. Carter

  • Vertical Geometry InGaN LED

    Kathleen Marie Doverspike;John Adam Edmond;Hua-Shuang Kong;Heidi Marie Dieringer

  • Method of removing substrate for high light extraction led

    Edmond John;エドモンド ジョン

  • Group iii nitride led with undoped cladding layer and multiple quantum well

    John Adam Edmond;Kathleen Marie Doverspike;Hua-Shuang Kong;Michael John Bergmann

  • Nickel tin bonding system with barrier layer for semiconductor wafers and devices

    Matthew Donofrio;David B. Slater;John A. Edmond;Hua-Shuang Kong

  • High efficiency GaN-based LEDs and lasers on SiC

    John Edmond;Amber Abare;Mike Bergman;Jayesh Bharathan

  • Contact resistance measurements on p‐type 6H‐SiC

    J. Crofton;P. A. Barnes;J. R. Williams;J. A. Edmond

  • Progress in SiC : from material growth to commercial device development

    C.H. Carter;V.F. Tsvetkov;R.C. Glass;D. Henshall

  • Silicon carbide UV photodiodes

    Unknown

  • Gas cooled led lamp

    Christopher P. Hussell;John Adam Edmond;Gerald H. Negley;Curt Progl

  • High Efficiency Group III Nitride LED with Lenticular Surface

    John Adam Edmond;David Beardsley Slater;Jayesh Bharathan;Matthew Donofrio

  • Light emitting devices and methods of forming light emitting devices

    Emerson David Todd;Haberern Kevin;Bergmann Michael John;Slater David

  • High output group III nitride light emitting diodes

    John Adam Edmond;Michael John Bergmann;David Todd Emerson;Kevin Ward Haberern

  • Electrical properties of ion-implanted p-n junction diodes in β-SiC

    J. A. Edmond;K. Das;R. F. Davis

  • Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies

    Matthew Donofrio;Christopher P. Hussell;John Adam Edmond

  • Light emitting diodes including current spreading layer and barrier sublayers

    David B. Slater;Bradley E. Williams;Peter S. Andrews;John A. Edmond

  • Electrical contacts to beta silicon carbide thin films

    J. A. Edmond;J. Ryu;J. T. Glass;R. F. Davis

  • Light emitting devices suitable for flip-chip bonding

    David B. Slater;Jayesh Bharathan;John Edmond;Mark Raffetto

Frequent Co-Authors

Gerald H. Negley
Gerald H. Negley Wolfspeed, Inc.
Peter S. Andrews
Peter S. Andrews Wolfspeed, Inc.
bernd keller
bernd keller Cree (United States)
Antony Paul Van de Ven
Antony Paul Van de Ven Wolfspeed, Inc.
Brian Thibeault
Brian Thibeault University of California, Santa Barbara

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