D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 30 Citations 4,835 163 World Ranking 3823 National Ranking 65

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Light-emitting diode
  • Optoelectronics

His primary scientific interests are in Optoelectronics, Light-emitting diode, Diode, Nitride and Epitaxy. His primary area of study in Optoelectronics is in the field of Wide-bandgap semiconductor. The various areas that he examines in his Light-emitting diode study include Doping, Etching, Rough surface, Electrostatic discharge and Indium tin oxide.

The concepts of his Diode study are interwoven with issues in Color temperature, Photoluminescence, Color rendering index, Ohmic contact and Quantum tunnelling. His Nitride research incorporates elements of Forward voltage and Schottky barrier. His work carried out in the field of Epitaxy brings together such families of science as Photodiode, Dark current, Responsivity, Photocurrent and Superlattice.

His most cited work include:

  • White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors (547 citations)
  • InGaN-GaN multiquantum-well blue and green light-emitting diodes (234 citations)
  • 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes (213 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Light-emitting diode, Diode, Gallium nitride and Wide-bandgap semiconductor. His work deals with themes such as Layer, Metalorganic vapour phase epitaxy, Nitride, Epitaxy and Sapphire, which intersect with Optoelectronics. His study on Light-emitting diode also encompasses disciplines like

  • Electroluminescence, which have a strong connection to Wavelength,
  • Doping which is related to area like Electrical resistivity and conductivity.

His Diode research is multidisciplinary, relying on both Quantum efficiency, Green-light, Ohmic contact, Voltage and Contact resistance. Wei-Chih Lai studied Gallium nitride and Schottky barrier that intersect with Photodiode. The various areas that Wei-Chih Lai examines in his Wide-bandgap semiconductor study include Etching, Optical fiber, Cascade and Biasing.

He most often published in these fields:

  • Optoelectronics (89.71%)
  • Light-emitting diode (56.37%)
  • Diode (38.73%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (89.71%)
  • Light-emitting diode (56.37%)
  • Diode (38.73%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Light-emitting diode, Diode, Thin-film transistor and Layer. His Optoelectronics study integrates concerns from other disciplines, such as Gallium nitride, Substrate and Epitaxy. His Light-emitting diode research is multidisciplinary, incorporating elements of Photonic crystal, Quantum well, Multiple quantum, Nanorod and Indium tin oxide.

His research integrates issues of Indium, Ohmic contact, Ultraviolet, Nitride and Contact resistance in his study of Diode. His Thin-film transistor study combines topics in areas such as Silicon, Polycrystalline silicon, Active layer and Threshold voltage, Transistor. His biological study spans a wide range of topics, including X-ray crystallography, Perovskite and Forward voltage.

Between 2013 and 2021, his most popular works were:

  • Oxidized Ni/Au Transparent Electrode in Efficient CH3NH3PbI3 Perovskite/Fullerene Planar Heterojunction Hybrid Solar Cells (44 citations)
  • Perovskite-Based Solar Cells With Nickel-Oxidized Nickel Oxide Hole Transfer Layer (28 citations)
  • Conversion efficiency improvement of inverted CH3NH3PbI3 perovskite solar cells with room temperature sputtered ZnO by adding the C60 interlayer (26 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Light-emitting diode
  • Optoelectronics

Optoelectronics, Energy conversion efficiency, Light-emitting diode, Perovskite and Heterojunction are his primary areas of study. Wei-Chih Lai is studying Lasing threshold, which is a component of Optoelectronics. His work investigates the relationship between Energy conversion efficiency and topics such as Sputtering that intersect with problems in Diffusion barrier, Spin coating and Wide-bandgap semiconductor.

His Light-emitting diode research is multidisciplinary, incorporating perspectives in Diode, Semiconductor laser theory, Photonic crystal, Electron blocking layer and Indium tin oxide. The study incorporates disciplines such as Indium, Epitaxy, Scanning electron microscope, Quantum well and Transmission electron microscopy in addition to Diode. His Perovskite study also includes

  • Open-circuit voltage that intertwine with fields like Nickel oxide,
  • Analytical chemistry together with Ferromagnetism and Doping.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su.
IEEE Photonics Technology Letters (2003)

722 Citations

InGaN-GaN multiquantum-well blue and green light-emitting diodes

S.J. Chang;W.C. Lai;Y.K. Su;J.F. Chen.
IEEE Journal of Selected Topics in Quantum Electronics (2002)

280 Citations

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu.
IEEE Journal of Selected Topics in Quantum Electronics (2002)

249 Citations

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai.
IEEE Electron Device Letters (2001)

157 Citations

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su.
IEEE Journal of Quantum Electronics (2002)

148 Citations

InGaN-AlInGaN multiquantum-well LEDs

Wei-Chih Lai;Shoou-Jinn Chang;M. Yokoyam;Jinn-Kong Sheu.
IEEE Photonics Technology Letters (2001)

136 Citations

Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

S.J. Chang;C.H. Chen;Y.K. Su;J.K. Sheu.
IEEE Electron Device Letters (2003)

128 Citations

Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers

S.J. Chang;L.W. Wu;Y.K. Su;Y.P. Hsu.
IEEE Photonics Technology Letters (2004)

123 Citations

Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Jinn Kong Sheu;Y. S. Lu;Min Lum Lee;W. C. Lai.
Applied Physics Letters (2007)

106 Citations

High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD

C.M. Tsai;J.K. Sheu;P.T. Wang;W.C. Lai.
IEEE Photonics Technology Letters (2006)

99 Citations

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