His primary scientific interests are in Optoelectronics, Light-emitting diode, Diode, Nitride and Epitaxy. His primary area of study in Optoelectronics is in the field of Wide-bandgap semiconductor. The various areas that he examines in his Light-emitting diode study include Doping, Etching, Rough surface, Electrostatic discharge and Indium tin oxide.
The concepts of his Diode study are interwoven with issues in Color temperature, Photoluminescence, Color rendering index, Ohmic contact and Quantum tunnelling. His Nitride research incorporates elements of Forward voltage and Schottky barrier. His work carried out in the field of Epitaxy brings together such families of science as Photodiode, Dark current, Responsivity, Photocurrent and Superlattice.
The scientist’s investigation covers issues in Optoelectronics, Light-emitting diode, Diode, Gallium nitride and Wide-bandgap semiconductor. His work deals with themes such as Layer, Metalorganic vapour phase epitaxy, Nitride, Epitaxy and Sapphire, which intersect with Optoelectronics. His study on Light-emitting diode also encompasses disciplines like
His Diode research is multidisciplinary, relying on both Quantum efficiency, Green-light, Ohmic contact, Voltage and Contact resistance. Wei-Chih Lai studied Gallium nitride and Schottky barrier that intersect with Photodiode. The various areas that Wei-Chih Lai examines in his Wide-bandgap semiconductor study include Etching, Optical fiber, Cascade and Biasing.
His primary areas of study are Optoelectronics, Light-emitting diode, Diode, Thin-film transistor and Layer. His Optoelectronics study integrates concerns from other disciplines, such as Gallium nitride, Substrate and Epitaxy. His Light-emitting diode research is multidisciplinary, incorporating elements of Photonic crystal, Quantum well, Multiple quantum, Nanorod and Indium tin oxide.
His research integrates issues of Indium, Ohmic contact, Ultraviolet, Nitride and Contact resistance in his study of Diode. His Thin-film transistor study combines topics in areas such as Silicon, Polycrystalline silicon, Active layer and Threshold voltage, Transistor. His biological study spans a wide range of topics, including X-ray crystallography, Perovskite and Forward voltage.
Optoelectronics, Energy conversion efficiency, Light-emitting diode, Perovskite and Heterojunction are his primary areas of study. Wei-Chih Lai is studying Lasing threshold, which is a component of Optoelectronics. His work investigates the relationship between Energy conversion efficiency and topics such as Sputtering that intersect with problems in Diffusion barrier, Spin coating and Wide-bandgap semiconductor.
His Light-emitting diode research is multidisciplinary, incorporating perspectives in Diode, Semiconductor laser theory, Photonic crystal, Electron blocking layer and Indium tin oxide. The study incorporates disciplines such as Indium, Epitaxy, Scanning electron microscope, Quantum well and Transmission electron microscopy in addition to Diode. His Perovskite study also includes
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White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su.
IEEE Photonics Technology Letters (2003)
InGaN-GaN multiquantum-well blue and green light-emitting diodes
S.J. Chang;W.C. Lai;Y.K. Su;J.F. Chen.
IEEE Journal of Selected Topics in Quantum Electronics (2002)
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu.
IEEE Journal of Selected Topics in Quantum Electronics (2002)
Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai.
IEEE Electron Device Letters (2001)
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su.
IEEE Journal of Quantum Electronics (2002)
InGaN-AlInGaN multiquantum-well LEDs
Wei-Chih Lai;Shoou-Jinn Chang;M. Yokoyam;Jinn-Kong Sheu.
IEEE Photonics Technology Letters (2001)
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
S.J. Chang;C.H. Chen;Y.K. Su;J.K. Sheu.
IEEE Electron Device Letters (2003)
Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers
S.J. Chang;L.W. Wu;Y.K. Su;Y.P. Hsu.
IEEE Photonics Technology Letters (2004)
Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
Jinn Kong Sheu;Y. S. Lu;Min Lum Lee;W. C. Lai.
Applied Physics Letters (2007)
High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD
C.M. Tsai;J.K. Sheu;P.T. Wang;W.C. Lai.
IEEE Photonics Technology Letters (2006)
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