World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
6657
World Ranking
4681
National Ranking
81

Wei-Chih Lai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wei-Chih Lai sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 281 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Wei-Chih Lai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wei-Chih Lai sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Wei-Chih Lai is affiliated with National Cheng Kung University in Taiwan, focusing on research in engineering and materials science. Their work spans 42 publications in engineering and 27 in materials science, with a specialization in several subfields including electrical and electronic engineering, materials chemistry, polymers and plastics, condensed matter physics, and electronic, optical, and magnetic materials.

The main topics covered in Lai's research include:

  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices

Wei-Chih Lai has contributed to several papers across prominent journals, with notable publications such as:

  • "Hydrogen Diffusion and Threshold Voltage Shifts in Top-Gate Amorphous InGaZnO Thin-Film Transistors," 2020, IEEE Transactions on Electron Devices
  • "AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier," 2020, Applied Physics Letters
  • "Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs," 2020, IEEE Transactions on Electron Devices
  • "Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors," 2020, IEEE Transactions on Electron Devices
  • "Conversion efficiency enhancement of methylammonium lead triiodide perovskite solar cells converted from thermally deposited lead iodide via thin methylammonium iodide interlayer," 2020, Organic Electronics

The frequent venues where Lai's research has been published include:

  • ACS Omega
  • IEEE Transactions on Electron Devices
  • ACS Applied Electronic Materials
  • ECS Journal of Solid State Science and Technology
  • Organic Electronics

Frequent collaborators in Lai's research include:

  • Sheng-Po Chang
  • Jinn-Kong Sheu
  • Shoou-Jinn Chang
  • Hong-Chih Chen
  • Yu-Shan Shih

Wei-Chih Lai's research demonstrates multidisciplinary expertise within the fields of electrical and electronic engineering and materials chemistry, contributing to a range of topics relevant to semiconductor devices, thin-film transistors, and advanced materials for electronics and photovoltaics.

Best Publications

  • White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

    J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su

  • InGaN-GaN multiquantum-well blue and green light-emitting diodes

    S.J. Chang;W.C. Lai;Y.K. Su;J.F. Chen

  • 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

    S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu

  • NiOx Electrode Interlayer and CH3NH2/CH3NH3PbBr3 Interface Treatment to Markedly Advance Hybrid Perovskite-Based Light-Emitting Diodes

    Yi Kai Chih;Jian Chih Wang;Rei Ting Yang;Chi Ching Liu

  • Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

    J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai

  • Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

    L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su

  • InGaN-AlInGaN multiquantum-well LEDs

    Wei-Chih Lai;Shoou-Jinn Chang;M. Yokoyam;Jinn-Kong Sheu

  • GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

    Y.K. Su;S.J. Chang;C.H. Chen;J.F. Chen

  • Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

    S.J. Chang;C.H. Chen;Y.K. Su;J.K. Sheu

  • Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers

    S.J. Chang;L.W. Wu;Y.K. Su;Y.P. Hsu

  • Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

    Jinn Kong Sheu;Y. S. Lu;Min Lum Lee;W. C. Lai

  • GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

    S.J. Chang;M.L. Lee;J.K. Sheu;W.C. Lai

  • Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

    Jinn-Kong Sheu;Chih-Ciao Yang;Shang-Ju Tu;Kuo-Hua Chang

  • High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD

    C.M. Tsai;J.K. Sheu;P.T. Wang;W.C. Lai

  • Oxidized Ni/Au Transparent Electrode in Efficient CH3NH3PbI3 Perovskite/Fullerene Planar Heterojunction Hybrid Solar Cells

    Wei Chih Lai;Kun Wei Lin;Yuan Ting Wang;Tsung Yu Chiang

  • Nitride-based near-ultraviolet LEDs with an ITO transparent contact

    C. H. Kuo;Shoou-Jinn Chang;Yan-Kuin Su;R. W. Chuang

  • Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact

    S.J. Chang;C.S. Chang;Y.K. Su;R.W. Chuang

  • High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

    J.-W. Shi;J.-K. Sheu;C.-H. Chen;G.-R. Lin

  • Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

    J. K. Sheu;M. L. Lee;W. C. Lai

  • Nitride-based LEDs with textured side walls

    C.S. Chang;S.J. Chang;Y.K. Su;C.T. Lee

  • InGaN/GaN tunnel-injection blue light-emitting diodes

    T.C. Wen;S.J. Chang;L.W. Wu;Y.K. Su

Frequent Co-Authors

Jinn-Kong Sheu
Jinn-Kong Sheu National Cheng Kung University
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University
Gou-Chung Chi
Gou-Chung Chi National Yang Ming Chiao Tung University
Peter Chen
Peter Chen National Cheng Kung University
Jin-Wei Shi
Jin-Wei Shi National Central University
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Ten-Chin Wen
Ten-Chin Wen National Cheng Kung University
Tzung-Fang Guo
Tzung-Fang Guo National Cheng Kung University
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University

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