World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
48
Citations
11412
World Ranking
4489
National Ranking
884

Zhanguo Wang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Zhanguo Wang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 638 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Zhanguo Wang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Zhanguo Wang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Zhanguo Wang is a researcher affiliated with the Chinese Academy of Sciences in China. Their academic work primarily spans the fields of Engineering and Materials Science, with a significant focus on Electrical and Electronic Engineering and Materials Chemistry. Their scholarly contributions also extend to Atomic and Molecular Physics, and Optics, as well as Molecular Biology and Spectroscopy.

The scope of Zhanguo Wang's research covers various topics including:

  • Perovskite Materials and Applications
  • Semiconductor Quantum Structures and Devices
  • Spectroscopy and Laser Applications
  • Conducting polymers and applications
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Laser Design and Applications

The researcher has published extensively in several academic venues, with notable frequent contributions in:

  • Journal of Semiconductors
  • arXiv (Cornell University)
  • Journal of Ethnopharmacology
  • ACS Applied Materials & Interfaces
  • Journal of Physics D Applied Physics

Among recent scientific papers, some examples of titles and years of publication include:

  • Engineering the Photocatalytic Behaviors of g/C3N4-Based Metal-Free Materials for Degradation of a Representative Antibiotic, 2020, Advanced Functional Materials
  • Antitumor activity and mechanism of costunolide and dehydrocostus lactone: Two natural sesquiterpene lactones from the Asteraceae family, 2020, Biomedicine & Pharmacotherapy
  • Novel benzo[1,2-b:4,5-b']difuran-based copolymer enables efficient polymer solar cells with small energy loss and high VOC, 2020, Nano Energy
  • The application of perovskite materials in solar water splitting, 2020, Journal of Semiconductors
  • Engineering the photoelectrochemical behaviors of ZnO for efficient solar water splitting, 2020, Journal of Semiconductors

Zhanguo Wang frequently collaborates with a group of coauthors, including:

  • Shengchun Qu
  • Zhijie Wang
  • Kong Liu
  • Huiling Hu
  • Wenkang Zhan

Best Publications

  • Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

    E. Moreau;I. Robert;J. M. Gérard;I. Abram

  • Absorption and luminescence of the surface states in ZnS nanoparticles

    Wei Chen;Zhanguo Wang;Zhaojun Lin;Lanying Lin

  • Synthesis and Structures of Morphology-Controlled ZnO Nano- and Microcrystals

    Wenqin Peng;Shengchun Qu;Guangwei Cong;Zhanguo Wang

  • Thermoluminescence of ZnS nanoparticles

    Wei Chen;Zhanguo Wang;Zhaojun Lin;Lanying Lin

  • Engineering the Photocatalytic Behaviors of g/C3N4‐Based Metal‐Free Materials for Degradation of a Representative Antibiotic

    Yanchun Deng;Yanchun Deng;Jun Liu;Yanbin Huang;Yanbin Huang;Mengmeng Ma

  • p-Type CuBi2O4: an easily accessible photocathodic material for high-efficiency water splitting

    Dawei Cao;Nasori Nasori;Zhijie Wang;Zhijie Wang;Yan Mi

  • Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells

    Shizhong Yue;Kong Liu;Rui Xu;Meicheng Li

  • Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures

    Jianzhi Zhao;Zhaojun Lin;Timothy D. Corrigan;Zhen Wang

  • High-performance quantum-dot superluminescent diodes

    Z.Y. Zhang;Z.G. Wang;B. Xu;P. Jin

  • Surface states induced photoluminescence from Mn2+ doped CdS nanoparticles

    Shu-Man Liu;Feng-Qi Liu;Hai-Qing Guo;Zhi-Hua Zhang

  • High efficiency P3HT:PCBM solar cells with an inserted PCBM Layer

    Dan Chi;Shengchun Qu;Zhanguo Wang;Jizheng Wang

  • One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals

    Aiwei Tang;Shengchun Qu;Kai Li;Yanbing Hou

  • Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

    Lianshan Wang;Xianglin Liu;Yude Zan;Jun Wang

  • Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

    Yuanjie Lv;Zhaojun Lin;Yu Zhang;Lingguo Meng

  • Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles

    Kong Liu;Shengchun Qu;Xinhui Zhang;Furui Tan

  • High-density InAs nanowires realized in situ on (100) InP

    Hanxuan Li;Ju Wu;Zhanguo Wang;Theda Daniels-Race

  • Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution

    Shu-Man Liu;Hai-Qing Guo;Zhi-Hua Zhang;Rui Li

  • AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

    Xiaoliang Wang;Guoxin Hu;Zhiyong Ma;Junxue Ran

  • Preparation of SnS2 colloidal quantum dots and their application in organic/inorganic hybrid solar cells

    Furui Tan;Shengchun Qu;Ju Wu;Kong Liu

  • Near-infrared and mid-infrared semiconductor broadband light emitters

    Chun-Cai Hou;Hong-Mei Chen;Jin-Chuan Zhang;Ning Zhuo

  • Turning a disadvantage into an advantage: synthesizing high-quality organometallic halide perovskite nanosheet arrays for humidity sensors

    Kuankuan Ren;Le Huang;Shizhong Yue;Shudi Lu

  • Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

    Xiaoguang Yang;Kefan Wang;Yongxian Gu;Haiqiao Ni

  • Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

    Yuanjie Lv;Zhaojun Lin;Timothy D. Corrigan;Jianzhi Zhao

  • Correlated structural and optical investigation of terbium-doped zinc oxide nanocrystals

    Shu-Man Liu;Feng-Qi Liu;Hai-Qing Guo;Zhi-Hua Zhang

  • Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

    Chongbiao Luan;Zhaojun Lin;Yuanjie Lv;Jingtao Zhao

Frequent Co-Authors

Jinmin Li
Jinmin Li Chinese Academy of Sciences
Jun Wang
Jun Wang University of Central Florida
Xavier Marie
Xavier Marie Federal University of Toulouse Midi-Pyrénées
Yong Lei
Yong Lei Ilmenau University of Technology
Yu Liu
Yu Liu University of Electronic Science and Technology of China
Xiufeng Han
Xiufeng Han Chinese Academy of Sciences
Junxi Wang
Junxi Wang Chinese Academy of Sciences
Lianzhou Wang
Lianzhou Wang University of Queensland
Jiqiang Ning
Jiqiang Ning Fudan University
Meiyong Liao
Meiyong Liao National Institute for Materials Science

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