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James C. M. Hwang

James C. M. Hwang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7563
World Ranking
3579
National Ranking
1313

Materials Science

D-Index
44
Citations
7222
World Ranking
12072
National Ranking
2798

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions to development of molecular beam epitaxy manufacturing and heterostructure devices and materials.

Overview

James C. M. Hwang is affiliated with Cornell University in the United States and has an extensive publication record in the field of engineering, with a specific focus on electrical and electronic engineering. Their research spans a wide range of subfields including biomedical engineering, condensed matter physics, materials chemistry, and atomic and molecular physics and optics.

Their work covers significant topics such as GaN-based semiconductor devices and materials, radio frequency integrated circuit design, acoustic wave resonator technologies, microwave and dielectric measurement techniques, microwave engineering and waveguides, near-field optical microscopy, and microfluidic and bio-sensing technologies.

Recent papers authored include the following:

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020, IEEE Electron Device Letters)
  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021, Semiconductor Science and Technology)
  • First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2020, IEEE Journal of the Electron Devices Society)
  • Applications of Microwaves in Medicine (2022, IEEE Journal of Microwaves)
  • Notochord vacuoles absorb compressive bone growth during zebrafish spine formation (2020, eLife)

Frequent collaborators include:

  • Lei Li
  • Huili Grace Xing
  • Kazuki Nomoto
  • Debdeep Jena
  • Austin Hickman

Hwang publishes regularly in venues such as:

  • arXiv (Cornell University)
  • IEEE Journal of Microwaves
  • IEEE Microwave Magazine
  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Electron Device Letters

Among professional recognitions, Hwang was named an IEEE Fellow in 1994 for contributions to the development of molecular beam epitaxy manufacturing and heterostructure devices and materials.

Best Publications

  • 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    Zhong Lin;Amber McCreary;Natalie Briggs;Shruti Subramanian

  • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

    P. D. Ye;B. Yang;K. K. Ng;J. Bude

  • Dimensional resonance of the two-dimensional electron gas in selectively doped GaAs/AlGaAs heterostructures

    S. J. Allen;H. L. Störmer;J. C. M. Hwang

  • Black phosphorus and its isoelectronic materials

    Fengnian Xia;Han Wang;James C. M. Hwang;A. H. Castro Neto

  • Parabolic magnetoresistance from the interaction effect in a two-dimensional electron gas

    M. A. Paalanen;D. C. Tsui;J. C. M. Hwang

  • Subband-Landau-level coupling in a two-dimensional electron gas

    Z. Schlesinger;J. C. M. Hwang;S. J. Allen

  • Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

    Xiaobin Yuan;J.C.M. Hwang;D. Forehand;C.L. Goldsmith

  • 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

    Y.Q. Wu;W.K. Wang;O. Koybasi;D.N. Zakharov

  • Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches

    Xiaobin Yuan;S. Cherepko;J. Hwang;C.L. Goldsmith

  • Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

    A. Kastalsky;J.C.M. Hwang

  • Cyclotron resonance in two dimensions

    Z. Schlesinger;S. J. Allen;J. C. M. Hwang;P. M. Platzman

  • Activation energies and localization in the fractional quantum Hall effect.

    G. S. Boebinger;H. L. Stormer;D. C. Tsui;A. M. Chang

  • Characterization of high-purity Si-doped molecular beam epitaxial GaAs

    B. J. Skromme;S. S. Bose;B. Lee;T. S. Low

  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform

    Austin Lee Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • Acceleration of Dielectric Charging in RF MEMS Capacitive Switches

    Xiaobin Yuan;Zhen Peng;J.C.M. Hwang;D. Forehand

  • Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors

    Ce-Jun Wei;J.C.M. Hwang

  • Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs

    Xi Luo;Yaghoob Rahbarihagh;James C. M. Hwang;Han Liu

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

    Lei Li;Kazuki Nomoto;Ming Pan;Wenshen Li

  • Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique

    P.C. Chao;P.M. Smith;S.C. Palmateer;J.C.M. Hwang

  • Fractional quantum Hall effect at low temperatures

    A. M. Chang;M. A. Paalanen;D. C. Tsui;H. L. Störmer

  • High-Cycle Life Testing of RF MEMS Switches

    C.L. Goldsmith;D.I. Forehand;Z. Peng;J.C.M. Hwang

  • Temporal and Thermal Stability of Al 2 O 3 -Passivated Phosphorene MOSFETs

    Xi Luo;Yaghoob Rahbarihagh;James C. M. Hwang;Han Liu

  • Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

    S.H. Wemple;W.C. Niehous;H. Fukui;J.C. Irvin

Frequent Co-Authors

Boon S. Ooi
Boon S. Ooi King Abdullah University of Science and Technology
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
H. L. Stormer
H. L. Stormer Columbia University
Choi Look Law
Choi Look Law Nanyang Technological University
Kazuki Nomoto
Kazuki Nomoto Cornell University
D. C. Tsui
D. C. Tsui Princeton University
Debdeep Jena
Debdeep Jena Cornell University
Orlando Auciello
Orlando Auciello The University of Texas at Dallas
Anirudha V. Sumant
Anirudha V. Sumant Argonne National Laboratory
Huili Grace Xing
Huili Grace Xing Cornell University

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