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James C. M. Hwang

James C. M. Hwang

Cornell University
United States

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 45 3579 3435 1314 1227 282 7563
Materials Science 44 12070 11670 2795 2596 258 7222

James C. M. Hwang publications per year

The chart shows the history of publications by James C. M. Hwang between 1976 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. James C. M. Hwang published across 50 years, from 1976 to 2025, averaging 6.7 papers a year. Output peaked at 18 publications in 2025. 31 of the 333 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1976 to 2025. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2025. 1976: 1 publication 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 2 publications 1981: 1 publication 1982: 5 publications 1983: 12 publications 1984: 10 publications 1985: 9 publications 1986: 3 publications 1987: 1 publication 1988: 0 publications 1989: 0 publications 1990: 0 publications 1991: 0 publications 1992: 0 publications 1993: 3 publications 1994: 1 publication 1995: 7 publications 1996: 3 publications 1997: 4 publications 1998: 2 publications 1999: 5 publications 2000: 2 publications 2001: 5 publications 2002: 1 publication 2003: 2 publications 2004: 8 publications 2005: 6 publications 2006: 13 publications 2007: 16 publications 2008: 14 publications 2009: 17 publications 2010: 14 publications 2011: 12 publications 2012: 5 publications 2013: 10 publications 2014: 9 publications 2015: 5 publications 2016: 13 publications 2017: 7 publications 2018: 15 publications 2019: 14 publications 2020: 12 publications 2021: 12 publications 2022: 6 publications 2023: 15 publications 2024: 13 publications 2025: 18 publications
1976 2025

333 publications in total across all disciplines

View publications per year as a table
James C. M. Hwang: publications per year, 1976 to 2025
Year Publications
1976 1
1977 0
1978 0
1979 0
1980 2
1981 1
1982 5
1983 12
1984 10
1985 9
1986 3
1987 1
1988 0
1989 0
1990 0
1991 0
1992 0
1993 3
1994 1
1995 7
1996 3
1997 4
1998 2
1999 5
2000 2
2001 5
2002 1
2003 2
2004 8
2005 6
2006 13
2007 16
2008 14
2009 17
2010 14
2011 12
2012 5
2013 10
2014 9
2015 5
2016 13
2017 7
2018 15
2019 14
2020 12
2021 12
2022 6
2023 15
2024 13
2025 18
Total 333
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James C. M. Hwang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James C. M. Hwang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 274–293 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 282 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335 282
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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James C. M. Hwang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James C. M. Hwang sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 45 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189 45
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions to development of molecular beam epitaxy manufacturing and heterostructure devices and materials.

Overview

James C. M. Hwang is affiliated with Cornell University in the United States and has an extensive publication record in the field of engineering, with a specific focus on electrical and electronic engineering. Their research spans a wide range of subfields including biomedical engineering, condensed matter physics, materials chemistry, and atomic and molecular physics and optics.

Their work covers significant topics such as GaN-based semiconductor devices and materials, radio frequency integrated circuit design, acoustic wave resonator technologies, microwave and dielectric measurement techniques, microwave engineering and waveguides, near-field optical microscopy, and microfluidic and bio-sensing technologies.

Recent papers authored include the following:

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020, IEEE Electron Device Letters)
  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021, Semiconductor Science and Technology)
  • First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2020, IEEE Journal of the Electron Devices Society)
  • Applications of Microwaves in Medicine (2022, IEEE Journal of Microwaves)
  • Notochord vacuoles absorb compressive bone growth during zebrafish spine formation (2020, eLife)

Frequent collaborators include:

  • Lei Li
  • Huili Grace Xing
  • Kazuki Nomoto
  • Debdeep Jena
  • Austin Hickman

Hwang publishes regularly in venues such as:

  • arXiv (Cornell University)
  • IEEE Journal of Microwaves
  • IEEE Microwave Magazine
  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Electron Device Letters

Among professional recognitions, Hwang was named an IEEE Fellow in 1994 for contributions to the development of molecular beam epitaxy manufacturing and heterostructure devices and materials.

Best Publications

  • 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    Zhong Lin;Amber McCreary;Natalie Briggs;Shruti Subramanian

  • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

    P. D. Ye;B. Yang;K. K. Ng;J. Bude

  • Dimensional resonance of the two-dimensional electron gas in selectively doped GaAs/AlGaAs heterostructures

    S. J. Allen;H. L. Störmer;J. C. M. Hwang

  • Black phosphorus and its isoelectronic materials

    Fengnian Xia;Han Wang;James C. M. Hwang;A. H. Castro Neto

  • Parabolic magnetoresistance from the interaction effect in a two-dimensional electron gas

    M. A. Paalanen;D. C. Tsui;J. C. M. Hwang

  • Subband-Landau-level coupling in a two-dimensional electron gas

    Z. Schlesinger;J. C. M. Hwang;S. J. Allen

  • Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

    Xiaobin Yuan;J.C.M. Hwang;D. Forehand;C.L. Goldsmith

  • 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

    Y.Q. Wu;W.K. Wang;O. Koybasi;D.N. Zakharov

  • Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches

    Xiaobin Yuan;S. Cherepko;J. Hwang;C.L. Goldsmith

  • Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

    A. Kastalsky;J.C.M. Hwang

  • Cyclotron resonance in two dimensions

    Z. Schlesinger;S. J. Allen;J. C. M. Hwang;P. M. Platzman

  • Activation energies and localization in the fractional quantum Hall effect.

    G. S. Boebinger;H. L. Stormer;D. C. Tsui;A. M. Chang

  • Characterization of high-purity Si-doped molecular beam epitaxial GaAs

    B. J. Skromme;S. S. Bose;B. Lee;T. S. Low

  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform

    Austin Lee Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • Acceleration of Dielectric Charging in RF MEMS Capacitive Switches

    Xiaobin Yuan;Zhen Peng;J.C.M. Hwang;D. Forehand

  • Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors

    Ce-Jun Wei;J.C.M. Hwang

  • Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs

    Xi Luo;Yaghoob Rahbarihagh;James C. M. Hwang;Han Liu

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

    Lei Li;Kazuki Nomoto;Ming Pan;Wenshen Li

  • Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique

    P.C. Chao;P.M. Smith;S.C. Palmateer;J.C.M. Hwang

  • Fractional quantum Hall effect at low temperatures

    A. M. Chang;M. A. Paalanen;D. C. Tsui;H. L. Störmer

  • High-Cycle Life Testing of RF MEMS Switches

    C.L. Goldsmith;D.I. Forehand;Z. Peng;J.C.M. Hwang

  • Temporal and Thermal Stability of Al 2 O 3 -Passivated Phosphorene MOSFETs

    Xi Luo;Yaghoob Rahbarihagh;James C. M. Hwang;Han Liu

  • Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

    S.H. Wemple;W.C. Niehous;H. Fukui;J.C. Irvin

Frequent Co-Authors

Boon S. Ooi
Boon S. Ooi King Abdullah University of Science and Technology
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
H. L. Stormer
H. L. Stormer Columbia University
Choi Look Law
Choi Look Law Nanyang Technological University
Kazuki Nomoto
Kazuki Nomoto Cornell University
D. C. Tsui
D. C. Tsui Princeton University
Debdeep Jena
Debdeep Jena Cornell University
Orlando Auciello
Orlando Auciello The University of Texas at Dallas
Anirudha V. Sumant
Anirudha V. Sumant Argonne National Laboratory
Huili Grace Xing
Huili Grace Xing Cornell University

External Links

Personal website of James C. M. Hwang Google Scholar page

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Best Scientists Citing James C. M. Hwang

Boon S. Ooi

Boon S. Ooi

King Abdullah University of Science and Technology

Publications: 52

Robert Plana

Robert Plana

Assystem (United Kingdom)

Publications: 37

Peide D. Ye

Peide D. Ye

Purdue University West Lafayette

Publications: 35

Tien Khee Ng

Tien Khee Ng

King Abdullah University of Science and Technology

Publications: 28

Michael Pepper

Michael Pepper

University College London

Publications: 24

Werner Wegscheider

Werner Wegscheider

Solid State Physics Laboratory

Publications: 20

Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua

Publications: 20

H. L. Stormer

H. L. Stormer

Columbia University

Publications: 17

Dominique Schreurs

Dominique Schreurs

KU Leuven

Publications: 16

Luke F. Lester

Luke F. Lester

Virginia Tech

Publications: 16

Yanqing Wu

Yanqing Wu

Peking University

Publications: 15

Gabriel M. Rebeiz

Gabriel M. Rebeiz

University of California, San Diego

Publications: 14

John Papapolymerou

John Papapolymerou

Michigan State University

Publications: 14

Jörg P. Kotthaus

Jörg P. Kotthaus

Ludwig-Maximilians-Universität München

Publications: 14

Hadis Morkoç

Hadis Morkoç

Virginia Commonwealth University

Publications: 14

Geok Ing Ng

Geok Ing Ng

Nanyang Technological University

Publications: 14

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