World's Best Scientists 2026 revealed!
James C. M. Hwang

James C. M. Hwang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7563
World Ranking
3579
National Ranking
1314

Materials Science

D-Index
44
Citations
7222
World Ranking
12070
National Ranking
2795

James C. M. Hwang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James C. M. Hwang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 282 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

James C. M. Hwang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James C. M. Hwang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions to development of molecular beam epitaxy manufacturing and heterostructure devices and materials.

Overview

James C. M. Hwang is affiliated with Cornell University in the United States and has an extensive publication record in the field of engineering, with a specific focus on electrical and electronic engineering. Their research spans a wide range of subfields including biomedical engineering, condensed matter physics, materials chemistry, and atomic and molecular physics and optics.

Their work covers significant topics such as GaN-based semiconductor devices and materials, radio frequency integrated circuit design, acoustic wave resonator technologies, microwave and dielectric measurement techniques, microwave engineering and waveguides, near-field optical microscopy, and microfluidic and bio-sensing technologies.

Recent papers authored include the following:

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020, IEEE Electron Device Letters)
  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021, Semiconductor Science and Technology)
  • First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2020, IEEE Journal of the Electron Devices Society)
  • Applications of Microwaves in Medicine (2022, IEEE Journal of Microwaves)
  • Notochord vacuoles absorb compressive bone growth during zebrafish spine formation (2020, eLife)

Frequent collaborators include:

  • Lei Li
  • Huili Grace Xing
  • Kazuki Nomoto
  • Debdeep Jena
  • Austin Hickman

Hwang publishes regularly in venues such as:

  • arXiv (Cornell University)
  • IEEE Journal of Microwaves
  • IEEE Microwave Magazine
  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Electron Device Letters

Among professional recognitions, Hwang was named an IEEE Fellow in 1994 for contributions to the development of molecular beam epitaxy manufacturing and heterostructure devices and materials.

Best Publications

  • 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    Zhong Lin;Amber McCreary;Natalie Briggs;Shruti Subramanian

  • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

    P. D. Ye;B. Yang;K. K. Ng;J. Bude

  • Dimensional resonance of the two-dimensional electron gas in selectively doped GaAs/AlGaAs heterostructures

    S. J. Allen;H. L. Störmer;J. C. M. Hwang

  • Black phosphorus and its isoelectronic materials

    Fengnian Xia;Han Wang;James C. M. Hwang;A. H. Castro Neto

  • Parabolic magnetoresistance from the interaction effect in a two-dimensional electron gas

    M. A. Paalanen;D. C. Tsui;J. C. M. Hwang

  • Subband-Landau-level coupling in a two-dimensional electron gas

    Z. Schlesinger;J. C. M. Hwang;S. J. Allen

  • Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches

    Xiaobin Yuan;J.C.M. Hwang;D. Forehand;C.L. Goldsmith

  • 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

    Y.Q. Wu;W.K. Wang;O. Koybasi;D.N. Zakharov

  • Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches

    Xiaobin Yuan;S. Cherepko;J. Hwang;C.L. Goldsmith

  • Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

    A. Kastalsky;J.C.M. Hwang

  • Cyclotron resonance in two dimensions

    Z. Schlesinger;S. J. Allen;J. C. M. Hwang;P. M. Platzman

  • Activation energies and localization in the fractional quantum Hall effect.

    G. S. Boebinger;H. L. Stormer;D. C. Tsui;A. M. Chang

  • Characterization of high-purity Si-doped molecular beam epitaxial GaAs

    B. J. Skromme;S. S. Bose;B. Lee;T. S. Low

  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform

    Austin Lee Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • Acceleration of Dielectric Charging in RF MEMS Capacitive Switches

    Xiaobin Yuan;Zhen Peng;J.C.M. Hwang;D. Forehand

  • Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors

    Ce-Jun Wei;J.C.M. Hwang

  • Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs

    Xi Luo;Yaghoob Rahbarihagh;James C. M. Hwang;Han Liu

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

    Lei Li;Kazuki Nomoto;Ming Pan;Wenshen Li

  • Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique

    P.C. Chao;P.M. Smith;S.C. Palmateer;J.C.M. Hwang

  • Fractional quantum Hall effect at low temperatures

    A. M. Chang;M. A. Paalanen;D. C. Tsui;H. L. Störmer

  • High-Cycle Life Testing of RF MEMS Switches

    C.L. Goldsmith;D.I. Forehand;Z. Peng;J.C.M. Hwang

  • Temporal and Thermal Stability of Al 2 O 3 -Passivated Phosphorene MOSFETs

    Xi Luo;Yaghoob Rahbarihagh;James C. M. Hwang;Han Liu

  • Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

    S.H. Wemple;W.C. Niehous;H. Fukui;J.C. Irvin

Frequent Co-Authors

Boon S. Ooi
Boon S. Ooi King Abdullah University of Science and Technology
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
H. L. Stormer
H. L. Stormer Columbia University
Choi Look Law
Choi Look Law Nanyang Technological University
Kazuki Nomoto
Kazuki Nomoto Cornell University
D. C. Tsui
D. C. Tsui Princeton University
Debdeep Jena
Debdeep Jena Cornell University
Orlando Auciello
Orlando Auciello The University of Texas at Dallas
Anirudha V. Sumant
Anirudha V. Sumant Argonne National Laboratory
Huili Grace Xing
Huili Grace Xing Cornell University

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