World's Best Scientists 2026 revealed!
Hongtao Yuan

Hongtao Yuan

D-Index & Metrics

Materials Science

D-Index
56
Citations
17754
World Ranking
8123
National Ranking
2360

Hongtao Yuan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hongtao Yuan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 150 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hongtao Yuan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hongtao Yuan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Hongtao Yuan is affiliated with Nanjing University in China, contributing primarily in the fields of Materials Science, Physics and Astronomy, and Engineering. Their work spans several subfields, with significant publication counts in Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

Their research topics focus extensively on advanced materials and related phenomena. Key areas include 2D Materials and Applications, Graphene research and applications, Topological Materials and Phenomena, Physics of Superconductivity and Magnetism, MXene and MAX Phase Materials, Electronic and Structural Properties of Oxides, and Iron-based superconductors research.

Hongtao Yuan has frequently collaborated with several researchers. The most common coauthors include Junwei Huang, Zeya Li, Caiyu Qiu, Feng Qin, and Xiangyu Bi, with collaboration counts ranging from over twenty to nearly fifty publications.

The scientist has published in a variety of prominent venues, with the highest number of articles appearing in arXiv (Cornell University), followed by Nature Communications, Nano Research, Nature Nanotechnology, and ACS Applied Materials & Interfaces.

Recent papers authored or co-authored by Hongtao Yuan highlight work on two-dimensional materials and superconductivity. Selected publications include:

  • A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect, 2021, Science
  • Tunable room-temperature ferromagnetism in Co-doped two-dimensional van der Waals ZnO, 2021, Nature Communications
  • Simultaneous Nodal Superconductivity and Time-Reversal Symmetry Breaking in the Noncentrosymmetric Superconductor CaPtAs, 2020, Physical Review Letters
  • An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces, 2023, Nature Communications
  • Continuous manipulation of magnetic anisotropy in a van der Waals ferromagnet via electrical gating, 2022, Nature Electronics

Best Publications

  • A phosphorene–graphene hybrid material as a high-capacity anode for sodium-ion batteries

    Jie Sun;Hyun-Wook Lee;Mauro Pasta;Hongtao Yuan

  • Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

    Hongtao Yuan;Xiaoge Liu;Farzaneh Afshinmanesh;Wei Li

  • Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary.

    Yu Zhang;Yanfeng Zhang;Qingqing Ji;Jing Ju

  • Physical and chemical tuning of two-dimensional transition metal dichalcogenides

    Haotian Wang;Hongtao Yuan;Hongtao Yuan;Seung Sae Hong;Yanbin Li

  • Rapid water disinfection using vertically aligned MoS2 nanofilms and visible light

    Chong Liu;Desheng Kong;Po Chun Hsu;Hongtao Yuan

  • High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

    Jinxiong Wu;Hongtao Yuan;Mengmeng Meng;Cheng Chen

  • Liquid-gated interface superconductivity on an atomically flat film

    Justin Ye;S. Inoue;K. Kobayashi;Y. Kasahara

  • High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

    Hongtao Yuan;Hidekazu Shimotani;Atsushi Tsukazaki;Akira Ohtomo

  • Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

    Erfu Liu;Yajun Fu;Yaojia Wang;Yanqing Feng

  • Zeeman-type spin splitting controlled by an electric field

    Hongtao Yuan;Hongtao Yuan;Mohammad Saeed Bahramy;Mohammad Saeed Bahramy;Kazuhiro Morimoto;Sanfeng Wu

  • Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide.

    Y. Yamada;K. Ueno;K. Ueno;T. Fukumura;T. Fukumura;H. T. Yuan

  • Discovery of superconductivity in KTaO 3 by electrostatic carrier doping

    K. Ueno;S. Nakamura;H. Shimotani;H. T. Yuan

  • 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    Zhong Lin;Amber McCreary;Natalie Briggs;Shruti Subramanian

  • Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

    Hongtao Yuan;Hongtao Yuan;Xinqiang Wang;Biao Lian;Haijun Zhang

  • Accessing the transport properties of graphene and its multilayers at high carrier density

    Jianting Ye;Monica F. Craciun;Mikito Koshino;Saverio Russo

  • Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

    Yongji Gong;Yongji Gong;Hongtao Yuan;Hongtao Yuan;Hongtao Yuan;Chun-Lan Wu;Peizhe Tang

  • High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection

    Erfu Liu;Mingsheng Long;Junwen Zeng;Wei Luo;Wei Luo

  • Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

    Hongtao Yuan;Hidekazu Shimotani;Jianting Ye;Sungjae Yoon

  • Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals.

    Jianbo Yin;Zhenjun Tan;Hao Hong;Jinxiong Wu

  • Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

    Zhao Zhao;Haijun Zhang;Hongtao Yuan;Shibing Wang

  • Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals

    Jianbo Yin;Zhenjun Tan;Hao Hong;Jinxiong Wu

Frequent Co-Authors

Harold Y. Hwang
Harold Y. Hwang Stanford University
Yi Cui
Yi Cui Stanford University
Yoshihiro Iwasa
Yoshihiro Iwasa University of Tokyo
Hidekazu Shimotani
Hidekazu Shimotani Tohoku University
Yulin Chen
Yulin Chen University of Oxford
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Jin-Feng Jia
Jin-Feng Jia Shanghai Jiao Tong University
Xiaolong Du
Xiaolong Du Chinese Academy of Sciences
Feng Miao
Feng Miao Nanjing University

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