World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
58
Citations
11980
World Ranking
2510
National Ranking
34

Shigeru Niki publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Shigeru Niki sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 430 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Shigeru Niki D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Shigeru Niki sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 58 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Shigeru Niki is affiliated with the National Institute of Advanced Industrial Science and Technology in Japan. Their research focuses on materials science and engineering, with specialized work in materials chemistry, electrical and electronic engineering, and atomic and molecular physics, and optics.

Their recent publications demonstrate involvement in the study of semiconductor and nanomaterial interfaces, particularly in chalcogenide semiconductors and copper-based nanomaterials. Notable papers include:

  • "Characterization of Surface and Heterointerface of Cu2ZnSn1-xGexSe4 for Solar Cell Applications," 2020, physica status solidi (RRL) - Rapid Research Letters
  • "Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se2 Heterojunctions," 2022, ACS Applied Materials & Interfaces

The main topics covered in their work include:

  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Copper-based nanomaterials and applications
  • Semiconductor materials and interfaces

Frequent collaborators in their research are Takehiko Nagai, Hitoshi Tampo, Shinho Kim, Hajime Shibata, and Norio Terada.

Shigeru Niki's research contributions are published in venues such as:

  • physica status solidi (RRL) - Rapid Research Letters
  • ACS Applied Materials & Interfaces

Best Publications

  • CIGS absorbers and processes

    Shigeru Niki;Miguel Contreras;Ingrid Repins;Michael Powalla

  • Terawatt-scale photovoltaics: Transform global energy

    Nancy M. Haegel;Harry Atwater;Teresa Barnes;Christian Breyer

  • Terawatt-scale photovoltaics: Trajectories and challenges

    Nancy M. Haegel;Robert Margolis;Tonio Buonassisi;David Feldman

  • ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

    K. Matsubara;P. Fons;K. Iwata;A. Yamada

  • Uniaxial locked epitaxy of ZnO on the a face of sapphire

    P. Fons;K. Iwata;A. Yamada;K. Matsubara

  • Growth of high-quality epitaxial ZnO films on α-Al2O3

    P Fons;K Iwata;S Niki;A Yamada

  • Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

    K Iwata;P Fons;A Yamada;K Matsubara

  • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films

    Shogo Ishizuka;Akimasa Yamada;Muhammad Monirul Islam;Hajime Shibata

  • CIGS solar cell with MBE-grown ZnS buffer layer

    Unknown

  • High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

    Kyoung Kook Kim;Shigeru Niki;Jin Yong Oh;June O. Song

  • Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

    K. Matsubara;H. Tampo;H. Shibata;A. Yamada

  • Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

    K. Nakahara;H. Takasu;P. Fons;A. Yamada

  • Remote hydrogen plasma doping of single crystal ZnO

    Yuri M. Strzhemechny;Howard L. Mosbacker;David C. Look;Donald C. Reynolds

  • Improvement of voltage deficit of Ge-incorporated kesterite solar cell with 12.3% conversion efficiency

    Shinho Kim;Kang Min Kim;Hitoshi Tampo;Hajime Shibata

  • ZnO growth on Si by radical source MBE

    K Iwata;P Fons;S Niki;A Yamada

  • Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2

    S. Chichibu;S. Chichibu;T. Mizutani;K. Murakami;T. Shioda

  • Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

    S. Ishizuka;K. Sakurai;A. Yamada;K. Matsubara

  • Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy

    H. Tampo;H. Shibata;K. Matsubara;A. Yamada

  • Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.

    Paul Fons;Hiroshi Tampo;Alexander V. Kolobov;Masataka Ohkubo

  • Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

    H. Tampo;H. Shibata;K. Maejima;A. Yamada

  • Dielectric function of Cu(In, Ga)Se2-based polycrystalline materials

    Shota Minoura;Keita Kodera;Takuji Maekawa;Kenichi Miyazaki

  • Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis

    Akihiro Nakane;Hitoshi Tampo;Masato Tamakoshi;Shohei Fujimoto

  • Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

    Ken Nakahara;Tetsuhiro Tanabe;Hidemi Takasu;Paul Fons

  • Ge-incorporated Cu2ZnSnSe4 thin-film solar cells with efficiency greater than 10%

    Shinho Kim;Kang Min Kim;Hitoshi Tampo;Hajime Shibata

Frequent Co-Authors

Paul Fons
Paul Fons Keio University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Yoshitaka Okada
Yoshitaka Okada University of Tokyo
Yoshihiko Kanemitsu
Yoshihiko Kanemitsu Kyoto University
Sang-Woo Kim
Sang-Woo Kim Yonsei University
Shizuo Fujita
Shizuo Fujita Kyoto University
David C. Look
David C. Look Wright State University
Sarah Kurtz
Sarah Kurtz University of California, Merced
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems

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