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D-Index & Metrics

Engineering and Technology

D-Index
58
Citations
11980
World Ranking
2508
National Ranking
34

Overview

Shigeru Niki is affiliated with the National Institute of Advanced Industrial Science and Technology in Japan. Their research focuses on materials science and engineering, with specialized work in materials chemistry, electrical and electronic engineering, and atomic and molecular physics, and optics.

Their recent publications demonstrate involvement in the study of semiconductor and nanomaterial interfaces, particularly in chalcogenide semiconductors and copper-based nanomaterials. Notable papers include:

  • "Characterization of Surface and Heterointerface of Cu2ZnSn1-xGexSe4 for Solar Cell Applications," 2020, physica status solidi (RRL) - Rapid Research Letters
  • "Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se2 Heterojunctions," 2022, ACS Applied Materials & Interfaces

The main topics covered in their work include:

  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Copper-based nanomaterials and applications
  • Semiconductor materials and interfaces

Frequent collaborators in their research are Takehiko Nagai, Hitoshi Tampo, Shinho Kim, Hajime Shibata, and Norio Terada.

Shigeru Niki's research contributions are published in venues such as:

  • physica status solidi (RRL) - Rapid Research Letters
  • ACS Applied Materials & Interfaces

Best Publications

  • CIGS absorbers and processes

    Shigeru Niki;Miguel Contreras;Ingrid Repins;Michael Powalla

  • Terawatt-scale photovoltaics: Transform global energy

    Nancy M. Haegel;Harry Atwater;Teresa Barnes;Christian Breyer

  • Terawatt-scale photovoltaics: Trajectories and challenges

    Nancy M. Haegel;Robert Margolis;Tonio Buonassisi;David Feldman

  • ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

    K. Matsubara;P. Fons;K. Iwata;A. Yamada

  • Uniaxial locked epitaxy of ZnO on the a face of sapphire

    P. Fons;K. Iwata;A. Yamada;K. Matsubara

  • Growth of high-quality epitaxial ZnO films on α-Al2O3

    P Fons;K Iwata;S Niki;A Yamada

  • Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

    K Iwata;P Fons;A Yamada;K Matsubara

  • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films

    Shogo Ishizuka;Akimasa Yamada;Muhammad Monirul Islam;Hajime Shibata

  • CIGS solar cell with MBE-grown ZnS buffer layer

    Unknown

  • High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

    Kyoung Kook Kim;Shigeru Niki;Jin Yong Oh;June O. Song

  • Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

    K. Matsubara;H. Tampo;H. Shibata;A. Yamada

  • Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

    K. Nakahara;H. Takasu;P. Fons;A. Yamada

  • Remote hydrogen plasma doping of single crystal ZnO

    Yuri M. Strzhemechny;Howard L. Mosbacker;David C. Look;Donald C. Reynolds

  • Improvement of voltage deficit of Ge-incorporated kesterite solar cell with 12.3% conversion efficiency

    Shinho Kim;Kang Min Kim;Hitoshi Tampo;Hajime Shibata

  • ZnO growth on Si by radical source MBE

    K Iwata;P Fons;S Niki;A Yamada

  • Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2

    S. Chichibu;S. Chichibu;T. Mizutani;K. Murakami;T. Shioda

  • Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

    S. Ishizuka;K. Sakurai;A. Yamada;K. Matsubara

  • Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy

    H. Tampo;H. Shibata;K. Matsubara;A. Yamada

  • Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.

    Paul Fons;Hiroshi Tampo;Alexander V. Kolobov;Masataka Ohkubo

  • Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

    H. Tampo;H. Shibata;K. Maejima;A. Yamada

  • Dielectric function of Cu(In, Ga)Se2-based polycrystalline materials

    Shota Minoura;Keita Kodera;Takuji Maekawa;Kenichi Miyazaki

  • Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis

    Akihiro Nakane;Hitoshi Tampo;Masato Tamakoshi;Shohei Fujimoto

  • Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

    Ken Nakahara;Tetsuhiro Tanabe;Hidemi Takasu;Paul Fons

  • Ge-incorporated Cu2ZnSnSe4 thin-film solar cells with efficiency greater than 10%

    Shinho Kim;Kang Min Kim;Hitoshi Tampo;Hajime Shibata

Frequent Co-Authors

Paul Fons
Paul Fons Keio University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Yoshitaka Okada
Yoshitaka Okada University of Tokyo
Yoshihiko Kanemitsu
Yoshihiko Kanemitsu Kyoto University
Sang-Woo Kim
Sang-Woo Kim Yonsei University
Shizuo Fujita
Shizuo Fujita Kyoto University
David C. Look
David C. Look Wright State University
Sarah Kurtz
Sarah Kurtz University of California, Merced
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems

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