World's Best Scientists 2026 revealed!

Overview

Takashi Fuyuki is affiliated with the Nara Institute of Science and Technology in Japan. The available data about this researcher does not include any recorded recent papers, co-authors, publication venues, or book publications.

There are no documented main fields of study, subfields, or specific topics of work associated with this scientist in the provided data. Similarly, there are no awards noted or years in which any were received.

Due to the limited available information, a comprehensive account of Takashi Fuyuki's academic contributions, research focus, and career trajectory cannot be provided at this time.

Best Publications

  • Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

    Takashi Fuyuki;Hayato Kondo;Tsutomu Yamazaki;Yu Takahashi

  • Analysis of multicrystalline silicon solar cells by modified 3-diode equivalent circuit model taking leakage current through periphery into consideration

    Kensuke Nishioka;Nobuhiro Sakitani;Yukiharu Uraoka;Takashi Fuyuki

  • Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

  • Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

    Dai Okamoto;Hiroshi Yano;Kenji Hirata;Tomoaki Hatayama

  • Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures

    Takashi Fuyuki;Hiroyuki Matsunami

  • Photographic diagnosis of crystalline silicon solar cells utilizing electroluminescence

    Takashi Fuyuki;Athapol Kitiyanan

  • Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

  • Field-test analysis of PV system output characteristics focusing on module temperature

    K Nishioka;T Hatayama;Y Uraoka;T Fuyuki

  • Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

    Dai Okamoto;Hiroshi Yano;Tomoaki Hatayama;Takashi Fuyuki

  • Analytic findings in the electroluminescence characterization of crystalline silicon solar cells

    Takashi Fuyuki;Hayato Kondo;Yasue Kaji;Akiyoshi Ogane

  • Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

    Hiroshi Yano;Natsuko Kanafuji;Ai Osawa;Tomoaki Hatayama

  • Ray-trace simulation of light trapping in silicon solar cell with texture structures

    Toshiki Yagi;Yukiharu Uraoka;Takashi Fuyuki

  • Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

    Atsushi Miura;Takio Hikono;Takashi Matsumura;Hiroshi Yano

  • Nondestructive readout of photochromic optical memory using photocurrent detection

    Tsuyoshi Tsujioka;Yuji Hamada;Kenichi Shibata;Akira Taniguchi

  • Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model

    Kensuke Nishioka;Nobuhiro Sakitani;Ken-ichi Kurobe;Yukie Yamamoto

  • Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

    Mami Fujii;Hiroshi Yano;Tomoaki Hatayama;Yukiharu Uraoka

  • Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

  • Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

    Tatsuo Yoshinobu;Hideaki Mitsui;Yoichiro Tarui;Takashi Fuyuki

  • Method and apparatus for evaluating solar cell and use thereof

    Takashi Fuyuki

  • Evaluation of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light by Simulation Program with integrated Circuit Emphasis

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

Frequent Co-Authors

Hiroyuki Matsunami
Hiroyuki Matsunami Kyoto University
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Geoffrey A. Ozin
Geoffrey A. Ozin University of Toronto
Furong Zhu
Furong Zhu Hong Kong Baptist University
Satoshi Yamasaki
Satoshi Yamasaki Kanazawa University
Makoto Konagai
Makoto Konagai Tokyo City University
Daniel Macdonald
Daniel Macdonald Australian National University
Erik Janzén
Erik Janzén Linköping University
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
François Léonard
François Léonard Sandia National Laboratories

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