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Takashi Fuyuki publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Takashi Fuyuki sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

Takashi Fuyuki D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Takashi Fuyuki sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

Overview

Takashi Fuyuki is affiliated with the Nara Institute of Science and Technology in Japan. The available data about this researcher does not include any recorded recent papers, co-authors, publication venues, or book publications.

There are no documented main fields of study, subfields, or specific topics of work associated with this scientist in the provided data. Similarly, there are no awards noted or years in which any were received.

Due to the limited available information, a comprehensive account of Takashi Fuyuki's academic contributions, research focus, and career trajectory cannot be provided at this time.

Best Publications

  • Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

    Takashi Fuyuki;Hayato Kondo;Tsutomu Yamazaki;Yu Takahashi

  • Analysis of multicrystalline silicon solar cells by modified 3-diode equivalent circuit model taking leakage current through periphery into consideration

    Kensuke Nishioka;Nobuhiro Sakitani;Yukiharu Uraoka;Takashi Fuyuki

  • Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

  • Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

    Dai Okamoto;Hiroshi Yano;Kenji Hirata;Tomoaki Hatayama

  • Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures

    Takashi Fuyuki;Hiroyuki Matsunami

  • Photographic diagnosis of crystalline silicon solar cells utilizing electroluminescence

    Takashi Fuyuki;Athapol Kitiyanan

  • Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

  • Field-test analysis of PV system output characteristics focusing on module temperature

    K Nishioka;T Hatayama;Y Uraoka;T Fuyuki

  • Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

    Dai Okamoto;Hiroshi Yano;Tomoaki Hatayama;Takashi Fuyuki

  • Analytic findings in the electroluminescence characterization of crystalline silicon solar cells

    Takashi Fuyuki;Hayato Kondo;Yasue Kaji;Akiyoshi Ogane

  • Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

    Hiroshi Yano;Natsuko Kanafuji;Ai Osawa;Tomoaki Hatayama

  • Ray-trace simulation of light trapping in silicon solar cell with texture structures

    Toshiki Yagi;Yukiharu Uraoka;Takashi Fuyuki

  • Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

    Atsushi Miura;Takio Hikono;Takashi Matsumura;Hiroshi Yano

  • Nondestructive readout of photochromic optical memory using photocurrent detection

    Tsuyoshi Tsujioka;Yuji Hamada;Kenichi Shibata;Akira Taniguchi

  • Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model

    Kensuke Nishioka;Nobuhiro Sakitani;Ken-ichi Kurobe;Yukie Yamamoto

  • Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

    Mami Fujii;Hiroshi Yano;Tomoaki Hatayama;Yukiharu Uraoka

  • Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

  • Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

    Tatsuo Yoshinobu;Hideaki Mitsui;Yoichiro Tarui;Takashi Fuyuki

  • Method and apparatus for evaluating solar cell and use thereof

    Takashi Fuyuki

  • Evaluation of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light by Simulation Program with integrated Circuit Emphasis

    Kensuke Nishioka;Tatsuya Takamoto;Takaaki Agui;Minoru Kaneiwa

Frequent Co-Authors

Hiroyuki Matsunami
Hiroyuki Matsunami Kyoto University
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Geoffrey A. Ozin
Geoffrey A. Ozin University of Toronto
Furong Zhu
Furong Zhu Hong Kong Baptist University
Satoshi Yamasaki
Satoshi Yamasaki Kanazawa University
Makoto Konagai
Makoto Konagai Tokyo City University
Daniel Macdonald
Daniel Macdonald Australian National University
Erik Janzén
Erik Janzén Linköping University
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
François Léonard
François Léonard Sandia National Laboratories

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