2026 Ivan Gueorguiev Ivanov: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	42	12551	12141	133	125	313	7051

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

12551

12141

133

125

313

7051

Overview

Ivan Gueorguiev Ivanov is affiliated with Linköping University in Sweden. Their research primarily focuses on materials science and engineering, with an emphasis on semiconductor technologies and nanomaterials.

The main fields of study covered by Ivanov include:

Materials Science
Engineering

Their work extensively explores subfields such as:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Key topics in Ivanov's research involve:

Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Graphene research and applications
Diamond and Carbon-based Materials Research
Silicon Nanostructures and Photoluminescence
Ga2O3 and related materials
ZnO doping and properties

Recent publications illustrate a diverse focus across materials and their applications, including:

Developing silicon carbide for quantum spintronics, 2020, Applied Physics Letters
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface, 2020, Nanoscale
MOCVD of AlN on epitaxial graphene at extreme temperatures, 2020, CrystEngComm
Charge state control of the silicon vacancy and divacancy in silicon carbide, 2021, Journal of Applied Physics
The effect of Cl- and N-doped MoS2 and WS2 coated on epitaxial graphene in gas-sensing applications, 2021, Surfaces and Interfaces

Frequent coauthors in Ivanov's research include:

Nguyên Tiên Són
Rositsa Yakimova
Joel Davidsson
Ivan Shtepliuk
Jawad Ul-Hassan

Their work has been published repeatedly in key academic venues such as:

Applied Physics Letters
arXiv (Cornell University)
Journal of Applied Physics
Physical Review B
Zenodo (CERN European Organization for Nuclear Research)

Best Publications

Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering

M. Tzolov;N. Tzenov;D. Dimova-Malinovska;M. Kalitzova

305
Citations
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Roland Nagy;Matthias Niethammer;Matthias Widmann;Yu-Chen Chen

287
Citations
Reactive magnetron sputter deposited CNx: Effects of N2 pressure and growth temperature on film composition, bonding, and microstructure

W. T. Zheng;H. Sjöström;I. Ivanov;K. Z. Xing

213
Citations
Growth of SiC by Hot-Wall CVD and HTCVD

O. Kordina;C. Hallin;A. Henry;J. P. Bergman

186
Citations
Annealing effects on optical properties of low temperature grown ZnO nanorod arrays

Li-Li Yang;Qingxiang Zhao;Magnus Willander;J H Yang

185
Citations
High temperature chemical vapor deposition of SiC

O. Kordina;C. Hallin;A. Ellison;A. S. Bakin

183
Citations
Developing silicon carbide for quantum spintronics

Nguyen T. Son;Christopher P. Anderson;Alexandre Bourassa;Kevin C. Miao

180
Citations
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Roland Nagy;Matthias Widmann;Matthias Niethammer;Durga B. R. Dasari

161
Citations
REACTIVE MAGNETRON SPUTTER-DEPOSITION OF CNX FILMS ON SI(001) SUBSTRATES - FILM GROWTH, MICROSTRUCTURE AND MECHANICAL-PROPERTIES

H. Sjöström;I. Ivanov;M. Johansson;L. Hultman

134
Citations
Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

I. G. Ivanov;C. Hallin;A. Henry;O. Kordina

131
Citations
Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

G. Pozina;I. Ivanov;B. Monemar;J. V. Thordson

119
Citations
The influence of the substrate material on the growth of V2O5 flash-evaporated films

C. Julien;J.P. Guesdon;A. Gorenstein;A. Khelfa

111
Citations
Properties of the D 1 bound exciton in 4 H − SiC

T. Egilsson;J. P. Bergman;I. G. Ivanov;A. Henry

110
Citations
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

104
Citations
Correlation between the antisite pair and the D I center in SiC

A. Gali;P. Deák;E. Rauls;N. T. Son

101
Citations
Growth of thick GaN layers with hydride vapour phase epitaxy

Bo Monemar;Henrik Larsson;Carl Hemmingsson;Ivan Gueorguiev Ivanov

98
Citations
Near-infrared reflective properties of perylene derivatives

Balwinder Kaur;Nurul Quazi;Ivan Ivanov;S.N. Bhattacharya

96
Citations
Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Matthias Widmann;Matthias Niethammer;Dmitry Yu. Fedyanin;Igor A. Khramtsov

96
Citations
GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION

I. Ivanov;L. Hultman;K. Järrendahl;P. Mårtensson

90
Citations
Electrostatic Probe Measurements in the Glow Discharge Plasma of a D. C. Magnetron Sputtering System

I. Petrov;V. Orlinov;I. Ivanov;J. Kourtev

88
Citations
PHOTOLUMINESCENCE OF ELECTRON-IRRADIATED 4H-SIC

T. Egilsson;A. Henry;I. G. Ivanov;J. L. Lindström

85
Citations
Extensional rheology of polypropylene melts from the Rheotens test

S Muke;I Ivanov;N Kao;S.N Bhattacharya

84
Citations
Liquid phase epitaxial growth of SiC

M Syväjärvi;R Yakimova;H.H Radamson;N.T Son

84
Citations
Quantum properties of dichroic silicon vacancies in silicon carbide

Roland Nagy;Matthias Widmann;Matthias Niethammer;Durga B. R. Dasari

79
Citations