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Ivan Gueorguiev Ivanov

Ivan Gueorguiev Ivanov

D-Index & Metrics

Materials Science

D-Index
42
Citations
7051
World Ranking
12547
National Ranking
132

Ivan Gueorguiev Ivanov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ivan Gueorguiev Ivanov sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 313 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ivan Gueorguiev Ivanov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ivan Gueorguiev Ivanov sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 42 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Ivan Gueorguiev Ivanov is affiliated with Linköping University in Sweden. Their research primarily focuses on materials science and engineering, with an emphasis on semiconductor technologies and nanomaterials.

The main fields of study covered by Ivanov include:

  • Materials Science
  • Engineering

Their work extensively explores subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Key topics in Ivanov's research involve:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Graphene research and applications
  • Diamond and Carbon-based Materials Research
  • Silicon Nanostructures and Photoluminescence
  • Ga2O3 and related materials
  • ZnO doping and properties

Recent publications illustrate a diverse focus across materials and their applications, including:

  • Developing silicon carbide for quantum spintronics, 2020, Applied Physics Letters
  • Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface, 2020, Nanoscale
  • MOCVD of AlN on epitaxial graphene at extreme temperatures, 2020, CrystEngComm
  • Charge state control of the silicon vacancy and divacancy in silicon carbide, 2021, Journal of Applied Physics
  • The effect of Cl- and N-doped MoS2 and WS2 coated on epitaxial graphene in gas-sensing applications, 2021, Surfaces and Interfaces

Frequent coauthors in Ivanov's research include:

  • Nguyên Tiên Són
  • Rositsa Yakimova
  • Joel Davidsson
  • Ivan Shtepliuk
  • Jawad Ul-Hassan

Their work has been published repeatedly in key academic venues such as:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Journal of Applied Physics
  • Physical Review B
  • Zenodo (CERN European Organization for Nuclear Research)

Best Publications

  • Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering

    M. Tzolov;N. Tzenov;D. Dimova-Malinovska;M. Kalitzova

  • High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

    Roland Nagy;Matthias Niethammer;Matthias Widmann;Yu-Chen Chen

  • Reactive magnetron sputter deposited CNx: Effects of N2 pressure and growth temperature on film composition, bonding, and microstructure

    W. T. Zheng;H. Sjöström;I. Ivanov;K. Z. Xing

  • Growth of SiC by Hot-Wall CVD and HTCVD

    O. Kordina;C. Hallin;A. Henry;J. P. Bergman

  • Annealing effects on optical properties of low temperature grown ZnO nanorod arrays

    Li-Li Yang;Qingxiang Zhao;Magnus Willander;J H Yang

  • High temperature chemical vapor deposition of SiC

    O. Kordina;C. Hallin;A. Ellison;A. S. Bakin

  • Developing silicon carbide for quantum spintronics

    Nguyen T. Son;Christopher P. Anderson;Alexandre Bourassa;Kevin C. Miao

  • Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Roland Nagy;Matthias Widmann;Matthias Niethammer;Durga B. R. Dasari

  • REACTIVE MAGNETRON SPUTTER-DEPOSITION OF CNX FILMS ON SI(001) SUBSTRATES - FILM GROWTH, MICROSTRUCTURE AND MECHANICAL-PROPERTIES

    H. Sjöström;I. Ivanov;M. Johansson;L. Hultman

  • Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

    I. G. Ivanov;C. Hallin;A. Henry;O. Kordina

  • Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

    G. Pozina;I. Ivanov;B. Monemar;J. V. Thordson

  • The influence of the substrate material on the growth of V2O5 flash-evaporated films

    C. Julien;J.P. Guesdon;A. Gorenstein;A. Khelfa

  • Properties of the D 1 bound exciton in 4 H − SiC

    T. Egilsson;J. P. Bergman;I. G. Ivanov;A. Henry

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • Correlation between the antisite pair and the D I center in SiC

    A. Gali;P. Deák;E. Rauls;N. T. Son

  • Growth of thick GaN layers with hydride vapour phase epitaxy

    Bo Monemar;Henrik Larsson;Carl Hemmingsson;Ivan Gueorguiev Ivanov

  • Near-infrared reflective properties of perylene derivatives

    Balwinder Kaur;Nurul Quazi;Ivan Ivanov;S.N. Bhattacharya

  • Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

    Matthias Widmann;Matthias Niethammer;Dmitry Yu. Fedyanin;Igor A. Khramtsov

  • GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION

    I. Ivanov;L. Hultman;K. Järrendahl;P. Mårtensson

  • Electrostatic Probe Measurements in the Glow Discharge Plasma of a D. C. Magnetron Sputtering System

    I. Petrov;V. Orlinov;I. Ivanov;J. Kourtev

  • PHOTOLUMINESCENCE OF ELECTRON-IRRADIATED 4H-SIC

    T. Egilsson;A. Henry;I. G. Ivanov;J. L. Lindström

  • Extensional rheology of polypropylene melts from the Rheotens test

    S Muke;I Ivanov;N Kao;S.N Bhattacharya

  • Liquid phase epitaxial growth of SiC

    M Syväjärvi;R Yakimova;H.H Radamson;N.T Son

  • Quantum properties of dichroic silicon vacancies in silicon carbide

    Roland Nagy;Matthias Widmann;Matthias Niethammer;Durga B. R. Dasari

Frequent Co-Authors

Erik Janzén
Erik Janzén Linköping University
Rositsa Yakimova
Rositsa Yakimova Linköping University
Nguyen Tien Son
Nguyen Tien Son Linköping University
Bo Monemar
Bo Monemar Linköping University
Adam Gali
Adam Gali Budapest University of Technology and Economics
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Mathias Schubert
Mathias Schubert University of Nebraska–Lincoln
Filippo Giannazzo
Filippo Giannazzo National Research Council (CNR)
Lars Hultman
Lars Hultman Linköping University
Christian M. Julien
Christian M. Julien Sorbonne University

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