World's Best Scientists 2026 revealed!
Douglas A. Buchanan

Douglas A. Buchanan

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
9023
World Ranking
5243
National Ranking
236

Douglas A. Buchanan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Douglas A. Buchanan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 114 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Douglas A. Buchanan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Douglas A. Buchanan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering

Best Publications

  • CMOS scaling into the nanometer regime

    Yuan Taur;D.A. Buchanan;Wei Chen;D.J. Frank

  • Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

    S.-H. Lo;D.A. Buchanan;Y. Taur;W. Wang

  • Scaling the gate dielectric: materials, integration, and reliability

    D. A. Buchanan

  • Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

    E.P Gusev;E Cartier;D.A Buchanan;M Gribelyuk

  • Volatile and non-volatile memories in silicon with nano-crystal storage

    S. Tiwari;F. Rana;K. Chan;H. Hanafi

  • Ultrathin high-K gate stacks for advanced CMOS devices

    E.P. Gusev;D.A. Buchanan;E. Cartier;A. Kumar

  • Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

    S.-H. Lo;D. A. Buchanan;Y. Taur

  • Anode hole injection and trapping in silicon dioxide

    D. J. DiMaria;E. Cartier;D. A. Buchanan

  • Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides

    Farhan Rana;Sandip Tiwari;D. A. Buchanan

  • Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors

    D. A. Buchanan;D. J. DiMaria

  • CMOS scaling into the 21st century: 0.1 mm and beyond

    Y. Taur;Y.-J. Mii;D. J. Frank;H.-S. Wong

  • 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

    D.A. Buchanan;E.P. Gusev;E. Cartier;H. Okorn-Schmidt

  • Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

    A. Callegari;P. D. Hoh;D. A. Buchanan;D. Lacey

  • Interfacial oxidation process for high-k gate dielectric process integration

    Arne W. Ballantine;Douglas A. Buchanan;Eduard A. Cartier;Kevin K. Chan

  • Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface

    D. J. DiMaria;D. A. Buchanan;J. H. Stathis;R. E. Stahlbush

  • Process options of forming silicided metal gates for advanced CMOS devices

    Ricky S. Amos;Douglas A. Buchanan;Cyril Cabral;Evgeni P. Gousev

  • Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

    D. A. Buchanan;A. D. Marwick;D. J. DiMaria;L. Dori

  • Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

    D.A. Buchanan;S.-H. Lo

  • Coulombic and neutral trapping centers in silicon dioxide.

    D. A. Buchanan;M. V. Fischetti;D. J. Dimaria

  • Low‐temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas

    T. V. Herak;T. T. Chau;D. J. Thomson;S. R. Mejia

  • Fabrication of midgap metal gates compatible with ultrathin dielectrics

    D. A. Buchanan;F. R. McFeely;J. J. Yurkas

Frequent Co-Authors

Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Evgeni Gusev
Evgeni Gusev Qualcomm (United States)
Matthew Copel
Matthew Copel IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego
James H. Stathis
James H. Stathis IBM (United States)
Fuad E. Doany
Fuad E. Doany IBM (United States)
Michael S. Freund
Michael S. Freund Dalhousie University
Supratik Guha
Supratik Guha Argonne National Laboratory
Sampath Purushothaman
Sampath Purushothaman IBM (United States)
Wayne L. Gladfelter
Wayne L. Gladfelter University of Minnesota

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Additionally, competency based masters provide a flexible learning path focused on mastering specific skills. This approach is ideal for engineers aiming to accelerate their education by demonstrating their knowledge in practical, measurable ways.

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