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K. De Meyer

K. De Meyer

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
8791
World Ranking
3700
National Ranking
84

K. De Meyer publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where K. De Meyer sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 357 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

K. De Meyer D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where K. De Meyer sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

K. De Meyer is a researcher affiliated with KU Leuven in Belgium, specializing in the field of engineering, with a particular focus on electrical and electronic engineering.

Their work spans several interconnected subfields, including:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering

Their primary research topics cover a variety of areas related to semiconductor technologies and device physics, including:

  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor materials and interfaces
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanowire Synthesis and Applications

K. De Meyer has published in recognized journals such as MRS Advances and the Journal of Applied Physics. Some of their recent papers include:

  • "A snapshot review on metal-semiconductor contact exploration for 7-nm CMOS technology and beyond," published in 2022 in MRS Advances
  • "Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling," published in 2022 in Journal of Applied Physics

The researcher collaborates with several colleagues frequently, with notable co-authors including:

  • Nadine Collaert
  • Hao Yu
  • Marc Schaekers
  • Jean-Luc Everaert
  • Naoto Horiguchi

Best Publications

  • Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

    G. Katti;M. Stucchi;K. De Meyer;W. Dehaene

  • Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Analysis of the parasitic S/D resistance in multiple-gate FETs

    A. Dixit;A. Kottantharayil;N. Collaert;M. Goodwin

  • Influence of device engineering on the analog and RF performances of SOI MOSFETs

    V. Kilchytska;A. Neve;L. Vancaillie;D. Levacq

  • Impact ionization in silicon: A review and update

    Unknown

  • VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

    B. Govoreanu;P. Blomme;M. Rosmeulen;J. Van Houdt

  • Impact of Line-Edge Roughness on FinFET Matching Performance

    E.. Baravelli;A.. Dixit;R.. Rooyackers;M.. Jurczak

  • Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

    F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  • Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

    W.K. Henson;N. Yang;S. Kubicek;E.M. Vogel

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Multi-gate devices for the 32 nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • FinFET analogue characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;Nadine Collaert

  • Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

    E. Baravelli;M. Jurczak;N. Speciale;K. De Meyer

  • Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$ n Junctions

    G. Eneman;M. Wiot;A. Brugere;O.S.I. Casain

  • Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

    N. Collaert;M. Demand;I. Ferain;J. Lisoni

  • Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

    G. Eneman;P. Verheyen;R. Rooyackers;F. Nouri

  • Exploring the limits of stress-enhanced hole mobility

    L. Smith;V. Moroz;G. Eneman;P. Verheyen

  • Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

    D. Verreck;A. S. Verhulst;Kuo-Hsing Kao;W. G. Vandenberghe

  • 22.5 A 4×20Gb/s WDM ring-based hybrid CMOS silicon photonics transceiver

    Michal Rakowski;Marianna Pantouvaki;Peter De Heyn;Peter Verheyen

  • Layout impact on the performance of a locally strained PMOSFET

    G. Eneman;P. Verheyen;R. Rooyackers;F. Nouri

  • 3D stacked ICs using Cu TSVs and Die to Wafer Hybrid Collective bonding

    G. Katti;A. Mercha;J. Van Olmen;C. Huyghebaert

  • FinFET analog characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;N. Collaert

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