World's Best Scientists 2026 revealed!
O. Faynot

O. Faynot

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
10599
World Ranking
2415
National Ranking
32

O. Faynot publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where O. Faynot sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 412 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

O. Faynot D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where O. Faynot sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

O. Faynot is affiliated with CEA LETI in France and specializes in engineering, with a particular focus on electrical and electronic engineering. Their research spans advancements in semiconductor devices and circuit design, semiconductor materials and devices, ferroelectric and negative capacitance devices, and radiation effects in electronics.

Their frequently published work appears in notable venues such as IEEE Transactions on Nuclear Science, Solid-State Electronics, and IEEE Transactions on Electron Devices.

Recent research papers by O. Faynot include the following:

  • TID Response of Nanowire Field-Effect Transistors: Impact of the Back-Gate Bias, 2020, IEEE Transactions on Nuclear Science
  • Analysis of electron mobility in 7-level stacked nanosheet GAA nMOSFETs, 2025, Solid-State Electronics
  • Experimental Demonstration of Ω-Gate SOI Nanowire MOS Transistors' Mobility Variation Induced by Substrate Bias, 2022, IEEE Transactions on Electron Devices

Frequent co-authors collaborating with O. Faynot include:

  • Sylvain Barraud
  • M. Vinet
  • Michelly de Souza
  • F. E. Bergamaschi
  • M. Cassé

The main topics addressed in their research are:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Radiation Effects in Electronics

Best Publications

  • Advances, challenges and opportunities in 3D CMOS sequential integration

    P. Batude;M. Vinet;B. Previtali;C. Tabone

  • Advances in 3D CMOS sequential integration

    P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  • Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    S. Barraud;M. Berthome;R. Coquand;M. Casse

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • 3D monolithic integration: Technological challenges and electrical results

    M. Vinet;P. Batude;C. Tabone;B. Previtali

  • CELONCEL: effective design technique for 3-D monolithic integration targeting high performance integrated circuits

    Shashikanth Bobba;Ashutosh Chakraborty;Olivier Thomas;Perrine Batude

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

    V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  • Engineered substrates for future More Moore and More than Moore integrated devices

    L. Clavelier;C. Deguet;L. Di Cioccio;E. Augendre

  • 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

    C. Dupre;A. Hubert;S. Becu;M. Jublot

  • 3D monolithic integration

    P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  • Multiple gate devices: advantages and challenges

    T. Poiroux;M. Vinet;O. Faynot;J. Widiez

  • FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

    C. Fenouillet-Beranger;S. Denorme;P. Perreau;C. Buj

  • Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

    S. Barraud;R. Coquand;M. Casse;M. Koyama

  • 3DVLSI with CoolCube process: An alternative path to scaling

    P. Batude;C. Fenouillet-Beranger;L. Pasini;V. Lu

  • Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

    V. Ferlet-Cavrois;P. Paillet;D. McMorrow;A. Torres

  • GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

    L. Hutin;C. Le Royer;J.-F. Damlencourt;J.-M. Hartmann

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

    S. Khandelwal;Y. S. Chauhan;D. D. Lu;S. Venugopalan

  • Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

    V. Ferlet-Cavrois;G. Gasiot;C. Marcandella;C. D'Hose

Frequent Co-Authors

Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Maud Vinet
Maud Vinet Grenoble Alpes University
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Denis Flandre
Denis Flandre Université Catholique de Louvain

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