World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
10374
World Ranking
3048
National Ranking
1149

Dale McMorrow publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dale McMorrow sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 310 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dale McMorrow D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dale McMorrow sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to laser-based methodologies for simulating single-event effects in digital devices

Overview

Dale McMorrow is affiliated with the United States Naval Research Laboratory in the United States and focuses primarily on research within engineering, specifically electrical and electronic engineering.

Their research work concentrates on radiation effects in electronics, semiconductor materials and devices, integrated circuits and semiconductor failure analysis, advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, ion-surface interactions and analysis, and advanced photonic communication systems.

McMorrow has a significant publication record with frequent contributions to the IEEE Transactions on Nuclear Science. Other venues include Sensors, Nuclear Engineering and Technology, and arXiv (Cornell University). Key venues where McMorrow's work appears are:

  • IEEE Transactions on Nuclear Science
  • Sensors
  • Nuclear Engineering and Technology
  • arXiv (Cornell University)

Coauthorships reveal recurring collaboration with several researchers, including:

  • Ani Khachatrian
  • Adrian Ildefonso
  • John D. Cressler
  • Joel M. Hales
  • Jeffrey W. Teng

Some of their recent papers are:

  • "Analysis of Single-Event Transients (SETs) Using Machine Learning (ML) and Ionizing Radiation Effects Spectroscopy (IRES)" published in 2021 in IEEE Transactions on Nuclear Science
  • "Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption" published in 2021 in IEEE Transactions on Nuclear Science
  • "Examination of Trapping Effects on Single-Event Transients in GaN HEMTs" published in 2022 in IEEE Transactions on Nuclear Science
  • "Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects" published in 2022 in IEEE Transactions on Nuclear Science
  • "Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach" published in 2022 in IEEE Transactions on Nuclear Science

In 2019, McMorrow was named an IEEE Fellow for contributions to laser-based methodologies for simulating single-event effects in digital devices.

Best Publications

  • Femtosecond optical Kerr studies on the origin of the nonlinear responses in simple liquids

    D. Mcmorrow;W. T. Lotshaw;G. A. Kenney-Wallace

  • The proton-transfer laser. Gain spectrum and amplification of spontaneous emission of 3-hydroxyflavone

    P. Chou;D. McMorrow;T. J. Aartsma;M. Kasha

  • Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies

    J.S. Melinger;S. Buchner;D. McMorrow;W.J. Stapor

  • Comparison of error rates in combinational and sequential logic

    S. Buchner;M. Baze;D. Brown;D. McMorrow

  • Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

    D. McMorrow;W.T. Lotshaw;J.S. Melinger;S. Buchner

  • Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design

    B.D. Olson;D.R. Ball;K.M. Warren;L.W. Massengill

  • Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

    D. McMorrow;J.S. Melinger;S. Buchner;T. Scott

  • The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

    K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  • The frequency response of condensed-phase media to femtosecond optical pulses: spectral-filter effects

    Dale McMorrow;William T. Lotshaw

  • Pulsed-Laser Testing for Single-Event Effects Investigations

    S. P. Buchner;F. Miller;V. Pouget;D. P. McMorrow

  • Femtosecond laser-induced optical kerr dynamics in CS2/alkane binary solutions

    Constantinos Kalpouzos;Dale McMorrow;William T. Lotshaw;Geraldine A. Kenney-Wallace

  • Optical and photophysical properties of light-harvesting phenylacetylene monodendrons based on unsymmetrical branching.

    Joseph S. Melinger;Yongchun Pan;Valeria D. Kleiman;Zhonghua Peng

  • New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

    V. Ferlet-Cavrois;P. Paillet;D. McMorrow;N. Fel

  • On-Chip Characterization of Single-Event Transient Pulsewidths

    B. Narasimham;V. Ramachandran;B.L. Bhuva;R.D. Schrimpf

  • A digital CMOS design technique for SEU hardening

    M.P. Baze;S.P. Buchner;D. McMorrow

  • Femtosecond dynamics of the optical Kerr effect in liquid nitrobenzene and chlorobenzene

    William T. Lotshaw;Dale McMorrow;Constantinos Kalpouzos;Geraldine A. Kenney-Wallace

  • Separation of nuclear and electronic contributions to femtosecond four-wave mixing data

    Dale McMorrow

  • Evidence for low-frequency (≈ 15 cm−1) collective modes in benzene and pyridine liquids

    Dale McMorrow;William T. Lotshaw

  • Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

    V. Ferlet-Cavrois;P. Paillet;D. McMorrow;A. Torres

  • Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

    V.F. Cavrois;V. Pouget;D. McMorrow;J.R. Schwank

Frequent Co-Authors

S. P. Buchner
S. P. Buchner United States Naval Research Laboratory
John D. Cressler
John D. Cressler Georgia Institute of Technology
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Nicolas Roche
Nicolas Roche Université Paris Cité

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