World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
4504
World Ranking
5206
National Ranking
1799

Guofu Niu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Guofu Niu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 234 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Guofu Niu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Guofu Niu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Guofu Niu is affiliated with Auburn University in the United States and focuses research primarily within the field of engineering, with an emphasis on electrical and electronic engineering. Their work encompasses several subfields, including biomedical engineering, atomic and molecular physics and optics, mechanics of materials, and complementary and alternative medicine.

The scientist has contributed extensively to topics related to advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, and analog and mixed-signal circuit design. Additional areas of interest include silicon carbide semiconductor technologies, photonic and optical devices, semiconductor materials and devices, and electrostatic discharge in electronics.

Frequent coauthors collaborating with Guofu Niu include A.J. Scholten, Yiao Li, Marnix Willemsen, Huaiyuan Zhang, and Anni Zhang. The partnerships have led to multiple publications across several notable venues.

Publication venues where Niu's work appears most often are:

  • ECS Meeting Abstracts
  • ECS Transactions
  • IEEE Transactions on Electron Devices
  • Journal of Pharmaceutical and Biomedical Analysis
  • Solid-State Electronics

Representative recent papers include:

  • "Tissue-specific chemical expression and quantitative analysis of bioactive components of Moutan Cortex by laser-microdissection combined with UPLC-Q-Orbitrap-MS technique," 2024, Journal of Pharmaceutical and Biomedical Analysis
  • "Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM," 2021, IEEE Transactions on Electron Devices
  • "Nonconducting RF and DC Hot Carrier Stresses in 14/16-nm FinFETs for RF Power Amplifiers," 2023, IEEE Transactions on Electron Devices
  • "Characterization of LDMOS down to cryogenic temperatures and modeling with PSPHV," 2024, Solid-State Electronics
  • "X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity," 2020, ECS Transactions

Best Publications

  • Design and fabrication of planar guard ring termination for high-voltage SiC diodes

    David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph

  • A unified approach to RF and microwave noise parameter modeling in bipolar transistors

    G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley

  • RF linearity characteristics of SiGe HBTs

    Guofu Niu;Qingqing Liang;J.D. Cressler;C.S. Webster

  • Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

    P. Marshall;M. Carts;S. Currie;R. Reed

  • Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

    G. Niu

  • A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

    G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna

  • Optimization of SiGe HBTs for operation at high current densities

    A.J. Joseph;J.D. Cressler;D.M. Richey;G. Niu

  • A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

    Qingqing Liang;J.D. Cressler;Guofu Niu;Yuan Lu

  • An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations

    J.D. Cressler;R. Krithivasan;Gang Zhang;Guofu Niu

  • Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

    R.A. Reed;P.W. Marshall;J.C. Pickel;M.A. Carts

  • Design of single and multiple zone junction termination extension structures for SiC power devices

    David C. Sheridan;Guofu Niu;John D. Cressler

  • Transistor noise in SiGe HBT RF technology

    Guofu Niu;J.D. Cressler;Zhenrong Jin;Shiming Zhang

  • Investigation of single-event transients in voltage-controlled oscillators

    Wenjian Chen;V. Pouget;H.J. Barnaby;J.D. Cressler

  • An investigation of the spatial location of proton-induced traps in SiGe HBTs

    J.M. Roldan;Guofu Niu;W.E. Ansley;J.D. Cressler

  • Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

    G. Niu;J.D. Cressler;S. Zhang;U. Gogineni

  • Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

    U. Gogineni;J.D. Cressler;G. Niu;D.L. Harame

  • Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

    G. Niu;J.D. Cressler;M. Shoga;K. Jobe

  • An SEU hardening approach for high-speed SiGe HBT digital logic

    R. Krithivasan;G. Niu;J.D. Cressler;S.M. Currie

  • An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

    A.K. Sutton;M. Bellini;J.D. Cressler;J.A. Pellish

Frequent Co-Authors

John D. Cressler
John D. Cressler Georgia Institute of Technology
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Robert A. Reed
Robert A. Reed Vanderbilt University
David L. Harame
David L. Harame IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
Lawrence E. Larson
Lawrence E. Larson Brown University

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