D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 32 Citations 3,847 201 World Ranking 4472 National Ranking 1672

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Transistor

His main research concerns Optoelectronics, Electronic engineering, Heterojunction bipolar transistor, Electrical engineering and Transistor. In general Optoelectronics study, his work on Doping often relates to the realm of Stress, thereby connecting several areas of interest. His Electronic engineering research is multidisciplinary, relying on both Noise and Noise temperature.

His research integrates issues of Band gap, CMOS, Heterojunction and Proton in his study of Heterojunction bipolar transistor. His study in the fields of Current-mode logic and High voltage under the domain of Electrical engineering overlaps with other disciplines such as Upset and Planar. His Transistor research includes elements of Storage cell, Electronic circuit, Laser and Common emitter.

His most cited work include:

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors (105 citations)
  • Design and fabrication of planar guard ring termination for high-voltage SiC diodes (96 citations)
  • A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology (81 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Heterojunction bipolar transistor, Electronic engineering, Electrical engineering and Noise. The Optoelectronics study combines topics in areas such as Transistor, Bipolar junction transistor and Flicker noise. His Heterojunction bipolar transistor study combines topics in areas such as Electronic circuit, Common emitter and Radio frequency.

As a part of the same scientific family, Guofu Niu mostly works in the field of Electronic engineering, focusing on Noise figure and, on occasion, Low-noise amplifier. His work carried out in the field of Electrical engineering brings together such families of science as Charge, Electron and Doping. His Noise research incorporates elements of Noise generator and Rf noise.

He most often published in these fields:

  • Optoelectronics (61.95%)
  • Heterojunction bipolar transistor (37.56%)
  • Electronic engineering (37.56%)

What were the highlights of his more recent work (between 2009-2021)?

  • Optoelectronics (61.95%)
  • Heterojunction bipolar transistor (37.56%)
  • Electronic engineering (37.56%)

In recent papers he was focusing on the following fields of study:

Guofu Niu mainly investigates Optoelectronics, Heterojunction bipolar transistor, Electronic engineering, Electrical engineering and Linearity. Guofu Niu specializes in Optoelectronics, namely Common emitter. His study looks at the relationship between Heterojunction bipolar transistor and topics such as Silicon-germanium, which overlap with Electronic circuit, Event, Simulation and Radiation hardening.

Guofu Niu combines subjects such as Heterostructure-emitter bipolar transistor, Transistor and Bicmos technology with his study of Electronic engineering. Phase noise, Transformer, Voltage-controlled oscillator and Inductor is closely connected to Noise measurement in his research, which is encompassed under the umbrella topic of Electrical engineering. His Linearity research is multidisciplinary, incorporating perspectives in Intermodulation, Biasing and X-parameters.

Between 2009 and 2021, his most popular works were:

  • Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs (20 citations)
  • A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling (12 citations)
  • Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures (10 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Electron

The scientist’s investigation covers issues in Noise, Bipolar junction transistor, Optoelectronics, Heterojunction bipolar transistor and Electronic engineering. The study incorporates disciplines such as Gate resistance and Metal gate in addition to Noise. Within one scientific family, he focuses on topics pertaining to Depletion region under Bipolar junction transistor, and may sometimes address concerns connected to NQS, Equivalent circuit, Time constant and Admittance.

His Optoelectronics study incorporates themes from Electronic circuit and Logic gate. His study with Heterojunction bipolar transistor involves better knowledge in Electrical engineering. His Electronic engineering research integrates issues from Biasing and Electronics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph.
IEEE Transactions on Electron Devices (2002)

138 Citations

A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph.
IEEE Transactions on Electron Devices (2002)

138 Citations

Design and fabrication of planar guard ring termination for high-voltage SiC diodes

David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler.
Solid-state Electronics (2000)

132 Citations

Design and fabrication of planar guard ring termination for high-voltage SiC diodes

David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler.
Solid-state Electronics (2000)

132 Citations

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley.
IEEE Transactions on Electron Devices (2001)

119 Citations

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley.
IEEE Transactions on Electron Devices (2001)

119 Citations

A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna.
IEEE Transactions on Electron Devices (1999)

109 Citations

A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna.
IEEE Transactions on Electron Devices (1999)

109 Citations

RF linearity characteristics of SiGe HBTs

Guofu Niu;Qingqing Liang;J.D. Cressler;C.S. Webster.
IEEE Transactions on Microwave Theory and Techniques (2001)

106 Citations

Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

P. Marshall;M. Carts;S. Currie;R. Reed.
IEEE Transactions on Nuclear Science (2005)

106 Citations

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