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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
4504
World Ranking
5206
National Ranking
1798

Overview

Guofu Niu is affiliated with Auburn University in the United States and focuses research primarily within the field of engineering, with an emphasis on electrical and electronic engineering. Their work encompasses several subfields, including biomedical engineering, atomic and molecular physics and optics, mechanics of materials, and complementary and alternative medicine.

The scientist has contributed extensively to topics related to advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, and analog and mixed-signal circuit design. Additional areas of interest include silicon carbide semiconductor technologies, photonic and optical devices, semiconductor materials and devices, and electrostatic discharge in electronics.

Frequent coauthors collaborating with Guofu Niu include A.J. Scholten, Yiao Li, Marnix Willemsen, Huaiyuan Zhang, and Anni Zhang. The partnerships have led to multiple publications across several notable venues.

Publication venues where Niu's work appears most often are:

  • ECS Meeting Abstracts
  • ECS Transactions
  • IEEE Transactions on Electron Devices
  • Journal of Pharmaceutical and Biomedical Analysis
  • Solid-State Electronics

Representative recent papers include:

  • "Tissue-specific chemical expression and quantitative analysis of bioactive components of Moutan Cortex by laser-microdissection combined with UPLC-Q-Orbitrap-MS technique," 2024, Journal of Pharmaceutical and Biomedical Analysis
  • "Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM," 2021, IEEE Transactions on Electron Devices
  • "Nonconducting RF and DC Hot Carrier Stresses in 14/16-nm FinFETs for RF Power Amplifiers," 2023, IEEE Transactions on Electron Devices
  • "Characterization of LDMOS down to cryogenic temperatures and modeling with PSPHV," 2024, Solid-State Electronics
  • "X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity," 2020, ECS Transactions

Best Publications

  • Design and fabrication of planar guard ring termination for high-voltage SiC diodes

    David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph

  • A unified approach to RF and microwave noise parameter modeling in bipolar transistors

    G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley

  • RF linearity characteristics of SiGe HBTs

    Guofu Niu;Qingqing Liang;J.D. Cressler;C.S. Webster

  • Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

    P. Marshall;M. Carts;S. Currie;R. Reed

  • Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

    G. Niu

  • A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

    G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna

  • Optimization of SiGe HBTs for operation at high current densities

    A.J. Joseph;J.D. Cressler;D.M. Richey;G. Niu

  • A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

    Qingqing Liang;J.D. Cressler;Guofu Niu;Yuan Lu

  • An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations

    J.D. Cressler;R. Krithivasan;Gang Zhang;Guofu Niu

  • Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

    R.A. Reed;P.W. Marshall;J.C. Pickel;M.A. Carts

  • Design of single and multiple zone junction termination extension structures for SiC power devices

    David C. Sheridan;Guofu Niu;John D. Cressler

  • Transistor noise in SiGe HBT RF technology

    Guofu Niu;J.D. Cressler;Zhenrong Jin;Shiming Zhang

  • Investigation of single-event transients in voltage-controlled oscillators

    Wenjian Chen;V. Pouget;H.J. Barnaby;J.D. Cressler

  • An investigation of the spatial location of proton-induced traps in SiGe HBTs

    J.M. Roldan;Guofu Niu;W.E. Ansley;J.D. Cressler

  • Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

    G. Niu;J.D. Cressler;S. Zhang;U. Gogineni

  • Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

    U. Gogineni;J.D. Cressler;G. Niu;D.L. Harame

  • Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs

    G. Niu;J.D. Cressler;M. Shoga;K. Jobe

  • An SEU hardening approach for high-speed SiGe HBT digital logic

    R. Krithivasan;G. Niu;J.D. Cressler;S.M. Currie

  • An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

    A.K. Sutton;M. Bellini;J.D. Cressler;J.A. Pellish

Frequent Co-Authors

John D. Cressler
John D. Cressler Georgia Institute of Technology
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Robert A. Reed
Robert A. Reed Vanderbilt University
David L. Harame
David L. Harame IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Lawrence E. Larson
Lawrence E. Larson Brown University
Robert Plana
Robert Plana Assystem (United Kingdom)

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