His main research concerns Optoelectronics, Electronic engineering, Heterojunction bipolar transistor, Electrical engineering and Transistor. In general Optoelectronics study, his work on Doping often relates to the realm of Stress, thereby connecting several areas of interest. His Electronic engineering research is multidisciplinary, relying on both Noise and Noise temperature.
His research integrates issues of Band gap, CMOS, Heterojunction and Proton in his study of Heterojunction bipolar transistor. His study in the fields of Current-mode logic and High voltage under the domain of Electrical engineering overlaps with other disciplines such as Upset and Planar. His Transistor research includes elements of Storage cell, Electronic circuit, Laser and Common emitter.
His scientific interests lie mostly in Optoelectronics, Heterojunction bipolar transistor, Electronic engineering, Electrical engineering and Noise. The Optoelectronics study combines topics in areas such as Transistor, Bipolar junction transistor and Flicker noise. His Heterojunction bipolar transistor study combines topics in areas such as Electronic circuit, Common emitter and Radio frequency.
As a part of the same scientific family, Guofu Niu mostly works in the field of Electronic engineering, focusing on Noise figure and, on occasion, Low-noise amplifier. His work carried out in the field of Electrical engineering brings together such families of science as Charge, Electron and Doping. His Noise research incorporates elements of Noise generator and Rf noise.
Guofu Niu mainly investigates Optoelectronics, Heterojunction bipolar transistor, Electronic engineering, Electrical engineering and Linearity. Guofu Niu specializes in Optoelectronics, namely Common emitter. His study looks at the relationship between Heterojunction bipolar transistor and topics such as Silicon-germanium, which overlap with Electronic circuit, Event, Simulation and Radiation hardening.
Guofu Niu combines subjects such as Heterostructure-emitter bipolar transistor, Transistor and Bicmos technology with his study of Electronic engineering. Phase noise, Transformer, Voltage-controlled oscillator and Inductor is closely connected to Noise measurement in his research, which is encompassed under the umbrella topic of Electrical engineering. His Linearity research is multidisciplinary, incorporating perspectives in Intermodulation, Biasing and X-parameters.
The scientist’s investigation covers issues in Noise, Bipolar junction transistor, Optoelectronics, Heterojunction bipolar transistor and Electronic engineering. The study incorporates disciplines such as Gate resistance and Metal gate in addition to Noise. Within one scientific family, he focuses on topics pertaining to Depletion region under Bipolar junction transistor, and may sometimes address concerns connected to NQS, Equivalent circuit, Time constant and Admittance.
His Optoelectronics study incorporates themes from Electronic circuit and Logic gate. His study with Heterojunction bipolar transistor involves better knowledge in Electrical engineering. His Electronic engineering research integrates issues from Biasing and Electronics.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors
Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph.
IEEE Transactions on Electron Devices (2002)
A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors
Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph.
IEEE Transactions on Electron Devices (2002)
Design and fabrication of planar guard ring termination for high-voltage SiC diodes
David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler.
Solid-state Electronics (2000)
Design and fabrication of planar guard ring termination for high-voltage SiC diodes
David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler.
Solid-state Electronics (2000)
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley.
IEEE Transactions on Electron Devices (2001)
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley.
IEEE Transactions on Electron Devices (2001)
A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna.
IEEE Transactions on Electron Devices (1999)
A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna.
IEEE Transactions on Electron Devices (1999)
RF linearity characteristics of SiGe HBTs
Guofu Niu;Qingqing Liang;J.D. Cressler;C.S. Webster.
IEEE Transactions on Microwave Theory and Techniques (2001)
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
P. Marshall;M. Carts;S. Currie;R. Reed.
IEEE Transactions on Nuclear Science (2005)
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