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Electronics and Electrical Engineering

D-Index
58
Citations
11430
World Ranking
1892
National Ranking
744

Research.com Recognitions

  • 2005 - IEEE Daniel E. Noble Award for Emerging Technologies “For the development of manufacturable Silicon Germanium, HBT Bipolar and BiCMOS technologies.”
  • 2003 - IEEE Fellow For contributions to the development of SiGe Heterojunction Bipolar Transistor and BiCMOS technologies.

Overview

David L. Harame is affiliated with IBM in the United States. Their work has been recognized through notable awards related to semiconductor technologies.

Among the awards received, David L. Harame was honored with the IEEE Daniel E. Noble Award for Emerging Technologies in 2005. This award was given for contributions to the development of manufacturable Silicon Germanium (SiGe), Heterojunction Bipolar Transistor (HBT) Bipolar, and BiCMOS technologies. Additionally, Harame was named an IEEE Fellow in 2003 for work on SiGe HBT and BiCMOS technologies.

The primary focus of Harame's research concerns silicon-germanium semiconductor technology and its applications within the field of microelectronics. The contributions relate specifically to the advancement of manufacturable versions of SiGe HBT and BiCMOS technologies, which are key components in high-performance integrated circuits.

No recent publications, co-authors, or specific fields of study were listed. There is also no available data on book publications or frequent publication venues for this researcher.

Best Publications

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Heterojunction bipolar transistors using Si-Ge alloys

    S.S. Iyer;G.L. Patton;J.M.C. Stork;B.S. Meyerson

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

    S.P. Voinigescu;M.C. Maliepaard;J.L. Showell;G.E. Babcock

  • SiGe-channel heterojunction p-MOSFET's

    S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

    R. Carter;J. Mazurier;L. Pirro;J-U. Sachse

  • Current status and future trends of SiGe BiCMOS technology

    D.L. Harame;D.C. Ahlgren;D.D. Coolbaugh;J.S. Dunn

  • Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

    B. S. Meyerson;F. K. LeGoues;T. N. Nguyen;D. L. Harame

  • A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

    A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich

  • A 22nm FDSOI Technology Optimized for RF/mmWave Applications

    Unknown

  • High-mobility modulation-doped SiGe-channel p-MOSFETs

    S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame

  • Foundation of rf CMOS and SiGe BiCMOS technologies

    J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld

  • Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

    R. Groves;D.L. Harame;D. Jadus

  • Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

    A.J. Joseph;D.L. Harame;B. Jagannathan;D. Coolbaugh

  • Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

    G.L. Patton;D.L. Harame;J.M.C. Stork;B.S. Meyerson

  • A unified approach to RF and microwave noise parameter modeling in bipolar transistors

    G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley

  • A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

    John J. Pekarik;J. Adkisson;P. Gray;Q. Liu

  • SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

    Jae-Sung Rieh;B. Jagannathan;D.R. Greenberg;M. Meghelli

  • Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

    E.F. Crabbe;B.S. Meyerson;J.M.C. Stork;D.L. Harame

  • A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

    S.P. Voinigescu;M.C. Maliepaard;M. Schroter;P. Schvan

  • SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY

    B.S. Meyerson;D.L. Harame;J. Stork;E. Crabbe

  • S iGe-Channel Heteroj unc tion p-MOSFET ' s

    Sophie Verdonckt-Vandebroek;Emmanuel F. CrabbC;Bernard S. Meyerson;David L. Harame

Frequent Co-Authors

Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
John D. Cressler
John D. Cressler Georgia Institute of Technology
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Guofu Niu
Guofu Niu Auburn University
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Robert A. Groves
Robert A. Groves IBM (United States)
Lawrence E. Larson
Lawrence E. Larson Brown University
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart

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