The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David L. Harame sits on this spectrum.
This scientist: 344 publications — 66th percentile
66% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David L. Harame sits on this spectrum.
This scientist: 58 D-Index — 74th percentile
74% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
David L. Harame is affiliated with IBM in the United States. Their work has been recognized through notable awards related to semiconductor technologies.
Among the awards received, David L. Harame was honored with the IEEE Daniel E. Noble Award for Emerging Technologies in 2005. This award was given for contributions to the development of manufacturable Silicon Germanium (SiGe), Heterojunction Bipolar Transistor (HBT) Bipolar, and BiCMOS technologies. Additionally, Harame was named an IEEE Fellow in 2003 for work on SiGe HBT and BiCMOS technologies.
The primary focus of Harame's research concerns silicon-germanium semiconductor technology and its applications within the field of microelectronics. The contributions relate specifically to the advancement of manufacturable versions of SiGe HBT and BiCMOS technologies, which are key components in high-performance integrated circuits.
No recent publications, co-authors, or specific fields of study were listed. There is also no available data on book publications or frequent publication venues for this researcher.
D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe
S.S. Iyer;G.L. Patton;J.M.C. Stork;B.S. Meyerson
G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe
S.P. Voinigescu;M.C. Maliepaard;J.L. Showell;G.E. Babcock
S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame
D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe
R. Carter;J. Mazurier;L. Pirro;J-U. Sachse
D.L. Harame;D.C. Ahlgren;D.D. Coolbaugh;J.S. Dunn
B. S. Meyerson;F. K. LeGoues;T. N. Nguyen;D. L. Harame
A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich
Unknown
S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame
J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld
R. Groves;D.L. Harame;D. Jadus
A.J. Joseph;D.L. Harame;B. Jagannathan;D. Coolbaugh
G.L. Patton;D.L. Harame;J.M.C. Stork;B.S. Meyerson
G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley
John J. Pekarik;J. Adkisson;P. Gray;Q. Liu
Jae-Sung Rieh;B. Jagannathan;D.R. Greenberg;M. Meghelli
E.F. Crabbe;B.S. Meyerson;J.M.C. Stork;D.L. Harame
S.P. Voinigescu;M.C. Maliepaard;M. Schroter;P. Schvan
B.S. Meyerson;D.L. Harame;J. Stork;E. Crabbe
Sophie Verdonckt-Vandebroek;Emmanuel F. CrabbC;Bernard S. Meyerson;David L. Harame
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