World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
8940
World Ranking
2457
National Ranking
948

Steven H. Voldman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Steven H. Voldman sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 400 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Steven H. Voldman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Steven H. Voldman sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Steven H. Voldman is an independent scientist and consultant based in the United States, specializing in engineering with a focus on electrical and electronic engineering. Their research includes significant work in materials chemistry and hardware and architecture subfields, reflecting a broad engagement with applied engineering disciplines.

Voldman's publication record includes three recent papers, emphasizing topics related to electrostatic discharge and electromagnetic compatibility. These papers are:

  • "A parasitic impedance effect study using a discharge probe for FICBE testing based on CDM waveform verification," published in 2020 in the Journal of Electrostatics
  • "Experiments and failure analysis of a charged board event on a hard disk drive printed circuit board assembly," published in 2021 in the Journal of Electrostatics
  • "Computational Simulation of a Field-Induced Charged Board Event Test Bench Using Transient Analysis," published in 2023 in IEEE Access

Their work has appeared predominantly in the Journal of Electrostatics and IEEE Access, with two publications in the former and one in the latter.

Frequent collaboration partners include S. Pimpakun, S. Chumpen, S. Plong-ngooluam, Chiranut Sa-ngiamsak, and Boonying Charoen. These recurring coauthors suggest active engagement in collaborative research efforts within their fields of expertise.

Main fields of study for Voldman encompass engineering, especially electrical and electronic engineering. Their research topics cover a range of areas such as:

  • Electrostatic Discharge in Electronics
  • Electromagnetic Compatibility and Noise Suppression
  • Electromagnetic Compatibility and Measurements
  • High voltage insulation and dielectric phenomena
  • Semiconductor materials and devices
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Integrated Circuits and Semiconductor Failure Analysis

These topics highlight a concentration on both the theoretical and practical aspects of electrostatic and electromagnetic phenomena in electronics, as well as hardware security considerations.

Best Publications

  • 3-D CMOS-on-SOI ESD structure and method

    Steven Howard Voldman

  • Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes

    Claude Louis Bertin;Erik Leigh Hedberg;James Marc Leas;Steven Howard Voldman

  • Three-dimensional monolithic electronic module having stacked planar arrays of integrated circuit chips

    Martha A. C. Cockerill;John G. Maltabes;Loretta J. O'Connor;Steven H. Voldman

  • Semiconductor diode with silicide films and trench isolation

    Steven H. Voldman;Minh H. Tong;Edward J. Nowak;Stephen F. Geissler

  • The state of the art of electrostatic discharge protection: physics, technology, circuits, design, simulation, and scaling

    S.H. Voldman

  • ESD: Circuits and Devices

    Steven H. Voldman

  • The evolution of IBM CMOS DRAM technology

    E. Adler;J. K. DeBrosse;S. F. Geissler;S. J. Holmes

  • Foundation of rf CMOS and SiGe BiCMOS technologies

    J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld

  • Double-gate low power SOI active clamp network for single power supply and multiple power supply applications

    Steven H. Voldman

  • Silicon-on-insulator and CMOS-on-SOI double film structures and fabrication process

    John J Ells-Monaghan;Steven H Voldman

  • Method of forming a semiconductor diode with depleted polysilicon gate structure

    Steven H. Voldman;Robert J. Gauthier;Jeffrey S. Brown

  • Analysis of snubber-clamped diode-string mixed voltage interface ESD protection network for advanced microprocessors

    Steven H. Voldman;Gianfranco Gerosa;Vaughn P. Gross;Nicholas Dickson

  • SEMICONDUCTOR DEVICE HAVING ELECTRICAL CONTACT TO EMBEDDED SOI STRUCTURE AND MANUFACTURE THEREOF

    Matthew J Ratten;Voldman Steven H

  • Kerr electro‐optic field mapping measurements in water using parallel cylindrical electrodes

    Markus Zahn;Tatsuo Takada;Steven Voldman

  • Reading head protective circuit

    Hughbanks Timothy Scott;Robertson Nail Leslie;Voldman Steven Howard

  • Electrostatic discharge protection system for MR heads

    Satya P. Arya;Timothy Scott Hughbanks;Steven Howard Voldman;Albert John Wallash

  • AN INTEGRATED MAGNETORESISTIVE HEAD MOUNTED ON A SLIDER WITH MR STRIFE, ITS MANUFACTURING METHODAND MAGNETIC MEDIUM DRIVE INCLUDING THE UNIT

    Yoldman Steven H;Wallash Albert J;Wilcox Jr Reginald B

  • ESD: Physics and Devices

    Steven H. Voldman

  • Semiconductor process and structural optimization of shallow trench isolation-defined and polysilicon-bound source/drain diodes for ESD networks

    S. Voldman;S. Geissler;J. Nakos;J. Pekarik

  • Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies

    S.H. Voldman;G. Gerosa

Frequent Co-Authors

Steven J. Holmes
Steven J. Holmes IBM (United States)
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Douglas D. Coolbaugh
Douglas D. Coolbaugh University at Albany, State University of New York
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)

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