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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 53 2457 2353 948 886 400 8940

Steven H. Voldman publications per year

The chart shows the history of publications by Steven H. Voldman between 1982 and 2023, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Steven H. Voldman published across 42 years, from 1982 to 2023, averaging 9.6 papers a year. Output peaked at 40 publications in 2006. 2 of the 402 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1982 to 2023. Vertical axis: number of publications, 0 to 40. Peak 40 publications in 2006. 1982: 1 publication 1983: 2 publications 1984: 1 publication 1985: 1 publication 1986: 0 publications 1987: 3 publications 1988: 2 publications 1989: 1 publication 1990: 4 publications 1991: 2 publications 1992: 3 publications 1993: 1 publication 1994: 2 publications 1995: 11 publications 1996: 14 publications 1997: 6 publications 1998: 20 publications 1999: 20 publications 2000: 20 publications 2001: 21 publications 2002: 27 publications 2003: 14 publications 2004: 16 publications 2005: 19 publications 2006: 40 publications 2007: 25 publications 2008: 18 publications 2009: 11 publications 2010: 6 publications 2011: 11 publications 2012: 16 publications 2013: 18 publications 2014: 13 publications 2015: 10 publications 2016: 13 publications 2017: 1 publication 2018: 2 publications 2019: 4 publications 2020: 1 publication 2021: 0 publications 2022: 1 publication 2023: 1 publication
1982 2023

402 publications in total across all disciplines

View publications per year as a table
Steven H. Voldman: publications per year, 1982 to 2023
Year Publications
1982 1
1983 2
1984 1
1985 1
1986 0
1987 3
1988 2
1989 1
1990 4
1991 2
1992 3
1993 1
1994 2
1995 11
1996 14
1997 6
1998 20
1999 20
2000 20
2001 21
2002 27
2003 14
2004 16
2005 19
2006 40
2007 25
2008 18
2009 11
2010 6
2011 11
2012 16
2013 18
2014 13
2015 10
2016 13
2017 1
2018 2
2019 4
2020 1
2021 0
2022 1
2023 1
Total 402
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Steven H. Voldman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Steven H. Voldman sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 394–413 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 400 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152 400
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Steven H. Voldman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Steven H. Voldman sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 53 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130 53
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Steven H. Voldman is an independent scientist and consultant based in the United States, specializing in engineering with a focus on electrical and electronic engineering. Their research includes significant work in materials chemistry and hardware and architecture subfields, reflecting a broad engagement with applied engineering disciplines.

Voldman's publication record includes three recent papers, emphasizing topics related to electrostatic discharge and electromagnetic compatibility. These papers are:

  • "A parasitic impedance effect study using a discharge probe for FICBE testing based on CDM waveform verification," published in 2020 in the Journal of Electrostatics
  • "Experiments and failure analysis of a charged board event on a hard disk drive printed circuit board assembly," published in 2021 in the Journal of Electrostatics
  • "Computational Simulation of a Field-Induced Charged Board Event Test Bench Using Transient Analysis," published in 2023 in IEEE Access

Their work has appeared predominantly in the Journal of Electrostatics and IEEE Access, with two publications in the former and one in the latter.

Frequent collaboration partners include S. Pimpakun, S. Chumpen, S. Plong-ngooluam, Chiranut Sa-ngiamsak, and Boonying Charoen. These recurring coauthors suggest active engagement in collaborative research efforts within their fields of expertise.

Main fields of study for Voldman encompass engineering, especially electrical and electronic engineering. Their research topics cover a range of areas such as:

  • Electrostatic Discharge in Electronics
  • Electromagnetic Compatibility and Noise Suppression
  • Electromagnetic Compatibility and Measurements
  • High voltage insulation and dielectric phenomena
  • Semiconductor materials and devices
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Integrated Circuits and Semiconductor Failure Analysis

These topics highlight a concentration on both the theoretical and practical aspects of electrostatic and electromagnetic phenomena in electronics, as well as hardware security considerations.

Best Publications

  • 3-D CMOS-on-SOI ESD structure and method

    Steven Howard Voldman

  • Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes

    Claude Louis Bertin;Erik Leigh Hedberg;James Marc Leas;Steven Howard Voldman

  • Three-dimensional monolithic electronic module having stacked planar arrays of integrated circuit chips

    Martha A. C. Cockerill;John G. Maltabes;Loretta J. O'Connor;Steven H. Voldman

  • Semiconductor diode with silicide films and trench isolation

    Steven H. Voldman;Minh H. Tong;Edward J. Nowak;Stephen F. Geissler

  • The state of the art of electrostatic discharge protection: physics, technology, circuits, design, simulation, and scaling

    S.H. Voldman

  • ESD: Circuits and Devices

    Steven H. Voldman

  • The evolution of IBM CMOS DRAM technology

    E. Adler;J. K. DeBrosse;S. F. Geissler;S. J. Holmes

  • Foundation of rf CMOS and SiGe BiCMOS technologies

    J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld

  • Double-gate low power SOI active clamp network for single power supply and multiple power supply applications

    Steven H. Voldman

  • Silicon-on-insulator and CMOS-on-SOI double film structures and fabrication process

    John J Ells-Monaghan;Steven H Voldman

  • Method of forming a semiconductor diode with depleted polysilicon gate structure

    Steven H. Voldman;Robert J. Gauthier;Jeffrey S. Brown

  • Analysis of snubber-clamped diode-string mixed voltage interface ESD protection network for advanced microprocessors

    Steven H. Voldman;Gianfranco Gerosa;Vaughn P. Gross;Nicholas Dickson

  • SEMICONDUCTOR DEVICE HAVING ELECTRICAL CONTACT TO EMBEDDED SOI STRUCTURE AND MANUFACTURE THEREOF

    Matthew J Ratten;Voldman Steven H

  • Kerr electro‐optic field mapping measurements in water using parallel cylindrical electrodes

    Markus Zahn;Tatsuo Takada;Steven Voldman

  • Reading head protective circuit

    Hughbanks Timothy Scott;Robertson Nail Leslie;Voldman Steven Howard

  • Electrostatic discharge protection system for MR heads

    Satya P. Arya;Timothy Scott Hughbanks;Steven Howard Voldman;Albert John Wallash

  • AN INTEGRATED MAGNETORESISTIVE HEAD MOUNTED ON A SLIDER WITH MR STRIFE, ITS MANUFACTURING METHODAND MAGNETIC MEDIUM DRIVE INCLUDING THE UNIT

    Yoldman Steven H;Wallash Albert J;Wilcox Jr Reginald B

  • ESD: Physics and Devices

    Steven H. Voldman

  • Semiconductor process and structural optimization of shallow trench isolation-defined and polysilicon-bound source/drain diodes for ESD networks

    S. Voldman;S. Geissler;J. Nakos;J. Pekarik

  • Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies

    S.H. Voldman;G. Gerosa

Frequent Co-Authors

Steven J. Holmes
Steven J. Holmes IBM (United States)
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Douglas D. Coolbaugh
Douglas D. Coolbaugh University at Albany, State University of New York
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)

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