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Fariborz Assaderaghi

Fariborz Assaderaghi

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 41 4305 4131 1530 1430 124 6631

Fariborz Assaderaghi publications per year

The chart shows the history of publications by Fariborz Assaderaghi between 1991 and 2017, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Fariborz Assaderaghi published across 27 years, from 1991 to 2017, averaging 4.5 papers a year. Output peaked at 19 publications in 2000. 2 of the 122 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1991 to 2017. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2000. 1991: 3 publications 1992: 4 publications 1993: 7 publications 1994: 7 publications 1995: 4 publications 1996: 3 publications 1997: 18 publications 1998: 5 publications 1999: 15 publications 2000: 19 publications 2001: 15 publications 2002: 3 publications 2003: 4 publications 2004: 0 publications 2005: 1 publication 2006: 0 publications 2007: 2 publications 2008: 2 publications 2009: 2 publications 2010: 0 publications 2011: 0 publications 2012: 3 publications 2013: 2 publications 2014: 0 publications 2015: 1 publication 2016: 1 publication 2017: 1 publication
1991 2017

122 publications in total across all disciplines

View publications per year as a table
Fariborz Assaderaghi: publications per year, 1991 to 2017
Year Publications
1991 3
1992 4
1993 7
1994 7
1995 4
1996 3
1997 18
1998 5
1999 15
2000 19
2001 15
2002 3
2003 4
2004 0
2005 1
2006 0
2007 2
2008 2
2009 2
2010 0
2011 0
2012 3
2013 2
2014 0
2015 1
2016 1
2017 1
Total 122
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Fariborz Assaderaghi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Fariborz Assaderaghi sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 114–133 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 124 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269 124
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Fariborz Assaderaghi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Fariborz Assaderaghi sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 41 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187 41
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Fariborz Assaderaghi is affiliated with SiTime in the United States. Their professional focus appears to be rooted in scientific research, though specific details about their research topics, published papers, and contributions to scientific literature are limited based on the available data.

No recent papers attributed to Fariborz Assaderaghi are listed, and there are no noted frequent co-authors or frequent publication venues associated with their work. Similarly, no book publications or awards have been documented in the provided information.

Information regarding main fields of study, subfields, or main topics of work is also not available. This suggests either a specialized area outside of commonly tracked academic categories or limited public documentation of their research output.

Given the affiliation with SiTime-a company known for technology development in timing solutions and semiconductor devices-it may be inferred that Fariborz Assaderaghi's work could relate to areas involving microelectronics, timing technology, or related engineering fields, although this is not explicitly stated in the data.

Without citations, paper titles, or detailed subject matter, a more precise characterization of Fariborz Assaderaghi's scientific contributions cannot be provided. The absence of listed awards or other recognitions similarly restricts further contextualization of their academic or professional impact.

Best Publications

  • Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

    F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor

  • A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation

    F. Assaderaghi;D. Sinitsky;S. Parke;J. Bokor

  • Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation

    Chenming Hu;Hsing-Jen Wann

  • Mixed memory integration with NVRAM, dram and sram cell structures on same substrate

    Fariborz Assaderaghi;Louis Lu-Chen Hsu;Jack A. Mandelman

  • T-RAM array having a planar cell structure and method for fabricating the same

    Louis L. Hsu;Rajiv V. Joshi;Fariborz Assaderaghi

  • Two-device memory cell on SOI for merged logic and memory applications

    Fariborz Assaderaghi;Bijan Davari;Louis L. Hsu;Jack A. Mandelman

  • IMPROVED SOI FET DESIGN TO REDUCE TRANSISTOR BIPOLAR CURRENT

    Mario M A Pelella;Fariborz Assaderaghi;Lawrence Frederick Wagner

  • A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

    F. Assaderaghi;S. Parke;D. Sinitsky;J. Bokor

  • Method and system for improving the performance on SOI memory arrays in an SRAM architecture system

    Louis L. Hsu;Rajiv V. Joshi;Fariborz Assaderaghi;Mary J. Saccamango

  • Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET

    C. Wann;F. Assaderaghi;R. Dennard;Chenming Hu

  • Double SOI device with recess etch and epitaxy

    Fariborz Assaderaghi;Tze-Chiang Chen;K. Muller;Edward Nowak

  • High-field transport of inversion-layer electrons and holes including velocity overshoot

    F. Assaderaghi;D. Sinitsky;J. Bokor;P.K. Ko

  • Method of making large value capacitor for SOI

    Fariborz Assaderaghi;Louis L. Hsu;Jack A. Mandelman;William R. Tonti

  • Partially-depleted SOI technology for digital logic

    G.G. Shahidi;A. Ajmera;F. Assaderaghi;R.J. Bolam

  • A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator With $ Frequency Stability and $ Integrated Jitter

    M. H. Perrott;J. C. Salvia;F. S. Lee;A. Partridge

  • The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

    J. Chen;F. Assaderaghi;P.-K. Ko;C. Hu

  • Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation

    Fariborz Assaderaghi;Louis Lu-Chen Hsu;Jack Allan Mandelman

  • Methods and circuits for asymmetric distribution of channel equalization between devices

    Jared L. Zerbe;Fariborz Assaderaghi;Brian S. Leibowitz;Hae-Chang Lee

  • Integrated circuit with built-in heating circuitry to reverse operational degeneration

    Gary Bronner;Brent S. Haukness;Fariborz Assaderaghi;Mark D. Kellam

  • Simulation Of Floating Body Effect In SOI Circuits Using BSIM3SOI

    R. Tu;D. Sinitsky;F. Assaderaghi;C. Wann

  • A novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

    F. Assaderaghi;S. Parke;P.K. Ko;Chenming Hu

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Louis L. Hsu
Louis L. Hsu IBM (United States)
Ping-Keung Ko
Ping-Keung Ko Hong Kong University of Science and Technology
Steven H. Voldman
Steven H. Voldman Independent Scientist / Consultant, US
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology

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