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Fariborz Assaderaghi

Fariborz Assaderaghi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6631
World Ranking
4305
National Ranking
1530

Fariborz Assaderaghi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Fariborz Assaderaghi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 124 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Fariborz Assaderaghi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Fariborz Assaderaghi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Fariborz Assaderaghi is affiliated with SiTime in the United States. Their professional focus appears to be rooted in scientific research, though specific details about their research topics, published papers, and contributions to scientific literature are limited based on the available data.

No recent papers attributed to Fariborz Assaderaghi are listed, and there are no noted frequent co-authors or frequent publication venues associated with their work. Similarly, no book publications or awards have been documented in the provided information.

Information regarding main fields of study, subfields, or main topics of work is also not available. This suggests either a specialized area outside of commonly tracked academic categories or limited public documentation of their research output.

Given the affiliation with SiTime-a company known for technology development in timing solutions and semiconductor devices-it may be inferred that Fariborz Assaderaghi's work could relate to areas involving microelectronics, timing technology, or related engineering fields, although this is not explicitly stated in the data.

Without citations, paper titles, or detailed subject matter, a more precise characterization of Fariborz Assaderaghi's scientific contributions cannot be provided. The absence of listed awards or other recognitions similarly restricts further contextualization of their academic or professional impact.

Best Publications

  • Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

    F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor

  • A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation

    F. Assaderaghi;D. Sinitsky;S. Parke;J. Bokor

  • Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation

    Chenming Hu;Hsing-Jen Wann

  • Mixed memory integration with NVRAM, dram and sram cell structures on same substrate

    Fariborz Assaderaghi;Louis Lu-Chen Hsu;Jack A. Mandelman

  • T-RAM array having a planar cell structure and method for fabricating the same

    Louis L. Hsu;Rajiv V. Joshi;Fariborz Assaderaghi

  • Two-device memory cell on SOI for merged logic and memory applications

    Fariborz Assaderaghi;Bijan Davari;Louis L. Hsu;Jack A. Mandelman

  • IMPROVED SOI FET DESIGN TO REDUCE TRANSISTOR BIPOLAR CURRENT

    Mario M A Pelella;Fariborz Assaderaghi;Lawrence Frederick Wagner

  • A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

    F. Assaderaghi;S. Parke;D. Sinitsky;J. Bokor

  • Method and system for improving the performance on SOI memory arrays in an SRAM architecture system

    Louis L. Hsu;Rajiv V. Joshi;Fariborz Assaderaghi;Mary J. Saccamango

  • Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET

    C. Wann;F. Assaderaghi;R. Dennard;Chenming Hu

  • Double SOI device with recess etch and epitaxy

    Fariborz Assaderaghi;Tze-Chiang Chen;K. Muller;Edward Nowak

  • High-field transport of inversion-layer electrons and holes including velocity overshoot

    F. Assaderaghi;D. Sinitsky;J. Bokor;P.K. Ko

  • Method of making large value capacitor for SOI

    Fariborz Assaderaghi;Louis L. Hsu;Jack A. Mandelman;William R. Tonti

  • Partially-depleted SOI technology for digital logic

    G.G. Shahidi;A. Ajmera;F. Assaderaghi;R.J. Bolam

  • A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator With $ Frequency Stability and $ Integrated Jitter

    M. H. Perrott;J. C. Salvia;F. S. Lee;A. Partridge

  • The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

    J. Chen;F. Assaderaghi;P.-K. Ko;C. Hu

  • Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation

    Fariborz Assaderaghi;Louis Lu-Chen Hsu;Jack Allan Mandelman

  • Methods and circuits for asymmetric distribution of channel equalization between devices

    Jared L. Zerbe;Fariborz Assaderaghi;Brian S. Leibowitz;Hae-Chang Lee

  • Integrated circuit with built-in heating circuitry to reverse operational degeneration

    Gary Bronner;Brent S. Haukness;Fariborz Assaderaghi;Mark D. Kellam

  • Simulation Of Floating Body Effect In SOI Circuits Using BSIM3SOI

    R. Tu;D. Sinitsky;F. Assaderaghi;C. Wann

  • A novel Silicon-On-Insulator (SOI) MOSFET for ultra low voltage operation

    F. Assaderaghi;S. Parke;P.K. Ko;Chenming Hu

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Louis L. Hsu
Louis L. Hsu IBM (United States)
Ping-Keung Ko
Ping-Keung Ko Hong Kong University of Science and Technology
Steven H. Voldman
Steven H. Voldman Independent Scientist / Consultant, US
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology

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