World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4779
World Ranking
6264
National Ranking
2068

Elyse Rosenbaum publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Elyse Rosenbaum sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 229 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Elyse Rosenbaum D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Elyse Rosenbaum sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Elyse Rosenbaum is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research primarily spans the fields of Engineering and Computer Science, with a focus on Electrical and Electronic Engineering and related subfields such as Artificial Intelligence, Statistical and Nonlinear Physics, Hardware and Architecture, and Numerical Analysis.

Their scientific contributions cover several main topics including Electrostatic Discharge in Electronics, Integrated Circuits and Semiconductor Failure Analysis, Electromagnetic Compatibility and Noise Suppression, Model Reduction and Neural Networks, Neural Networks and Applications, Numerical Methods for Differential Equations, and Physical Unclonable Functions (PUFs) and Hardware Security.

Rosenbaum has authored publications in a range of peer-reviewed venues, notably:

  • IEEE Transactions on Electromagnetic Compatibility
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Microwave Theory and Techniques
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Recent papers authored or co-authored by Rosenbaum include:

  • "Compact Models for Simulation of On-Chip ESD Protection Networks" (2023), published in IEEE Transactions on Electron Devices
  • "Neural Ordinary Differential Equation Models of Circuits: Capabilities and Pitfalls" (2022), published in IEEE Transactions on Microwave Theory and Techniques
  • "Analysis of System-Level ESD-Induced Soft Failures in a CMOS Microcontroller" (2020), published in IEEE Transactions on Electromagnetic Compatibility
  • "Statistical Learning of IC Models for System-Level ESD Simulation" (2021), published in IEEE Transactions on Electromagnetic Compatibility
  • "A High Voltage Tolerant Supply Clamp for ESD Protection in a 45-nm SOI Technology" (2022), presented at the 2022 IEEE International Reliability Physics Symposium (IRPS)

Rosenbaum's frequent co-authors include Maxim Raginsky, Shudong Huang, Jie Xiong, Matthew Drallmeier, and Yujie Zhou. Collaboration patterns highlight work in areas intersecting with electrostatic discharge phenomena and system-level failure analysis in integrated circuits.

Best Publications

  • Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

    Leonard F. Register;Elyse Rosenbaum;Kevin Yang;Kevin Yang

  • Berkeley reliability tools-BERT

    R.H. Tu;E. Rosenbaum;W.Y. Chan;C.C. Li

  • Mechanism of stress-induced leakage current in MOS capacitors

    E. Rosenbaum;L.F. Register

  • ILLIADS-T: an electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips

    Yi-Kan Cheng;P. Raha;Chin-Chi Teng;E. Rosenbaum

  • Interconnect thermal modeling for accurate simulation of circuit timing and reliability

    Danqing Chen;Erhong Li;E. Rosenbaum;Sung-Mo Kang

  • Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

    Jie Wu;Patrick Juliano;Elyse Rosenbaum

  • iTEM: a temperature-dependent electromigration reliability diagnosis tool

    Chin-Chi Teng;Yi-Kan Cheng;E. Rosenbaum;Sung-Mo Kang

  • On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

    Zhi Chen;Karl Hess;Jinju Lee;J.W. Lyding

  • Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

    J. Wu;P. Juliano;E. Rosenbaum

  • A compact, timed-shutoff, MOSFET-based power clamp for on-chip ESD protection

    Junjun Li;R. Gauthier;E. Rosenbaum

  • Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions

    E. Rosenbaum;Z. Liu;C. Hu

  • Trap-assisted tunneling current through ultra-thin oxide

    J. Wu;L.F. Register;E. Rosenbaum

  • Study of Design Factors Affecting Turn-on Time of Silicon Controlled Rectifiers (SCRS) in 90 and 65nm Bulk CMOS Technologies

    James Sarro;Kiran Chatty;Robert Gauthier;Elyse Rosenbaum

  • Compact modeling of on-chip ESD protection devices using Verilog-A

    Junjun Li;S. Joshi;R. Barnes;E. Rosenbaum

  • A bidirectional NMOSFET current reduction model for simulation of hot-carrier-induced circuit degradation

    K.N. Quader;C.C. Li;R. Tu;E. Rosenbaum

  • Accelerated testing of SiO/sub 2/ reliability

    E. Rosenbaum;J.C. King;J.C. King;Chenming Hu;Chenming Hu

  • Gate oxide reliability under ESD-like pulse stress

    Jie Wu;E. Rosenbaum

  • Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection

    Wen-Yi Chen;E. Rosenbaum;M. Ker

  • Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies

    J. Di Sarro;K. Chatty;R. Gauthier;E. Rosenbaum

  • High-frequency time-dependent breakdown of SiO/sub 2/

    E. Rosenbaum;C. Hu

  • Cancellation technique to provide ESD protection for multi-GHz RF inputs

    S. Hyvonen;S. Joshi;E. Rosenbaum

Frequent Co-Authors

Sung-Mo Kang
Sung-Mo Kang University of California, Santa Cruz
Chenming Hu
Chenming Hu University of California, Berkeley
Ping-Keung Ko
Ping-Keung Ko Hong Kong University of Science and Technology
Naresh R. Shanbhag
Naresh R. Shanbhag University of Illinois at Urbana-Champaign
David L. Harame
David L. Harame IBM (United States)
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Andreas C. Cangellaris
Andreas C. Cangellaris University of Illinois at Urbana-Champaign
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
Steven H. Voldman
Steven H. Voldman Independent Scientist / Consultant, US
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)

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