World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5001
World Ranking
6248
National Ranking
2060

Overview

Johannes M. C. Stork is affiliated with ON Semiconductor in the United States. Their work is positioned within the semiconductor industry, which encompasses the design, development, and manufacturing of semiconductor devices and related technologies.

Although specific publications, co-authors, and topic details are not listed, their professional association with ON Semiconductor indicates involvement with applied research and development in the semiconductor field. This typically includes areas such as integrated circuits, power management, and electronic components essential to modern electronics.

There are no recorded recent papers, frequent co-authors, or noted publication venues attributed to Johannes M. C. Stork in the available data. Similarly, no book publications or awards have been documented.

The lack of detailed publication and topical data limits the assessment of their precise research focus. However, their expertise likely aligns with key aspects of semiconductor technology given their primary affiliation.

Best Publications

  • Heterojunction bipolar transistors using Si-Ge alloys

    S.S. Iyer;G.L. Patton;J.M.C. Stork;B.S. Meyerson

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

    B. Cheng;M. Cao;R. Rao;A. Inani

  • SiGe-channel heterojunction p-MOSFET's

    S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame

  • Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

    G.L. Patton;S.S. Iyer;S.L. Delage;S. Tiwari

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

    J.D. Cressler;J.H. Comfort;E.F. Crabbe;G.L. Patton

  • Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

    S.S. Iyer;G.L. Patton;S.S. Delage;S. Tiwari

  • High-mobility modulation-doped SiGe-channel p-MOSFETs

    S. Verdonckt-Vandebroek;E.F. Crabbe;B.S. Meyerson;D.L. Harame

  • Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

    G.L. Patton;D.L. Harame;J.M.C. Stork;B.S. Meyerson

  • Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

    E.F. Crabbe;B.S. Meyerson;J.M.C. Stork;D.L. Harame

  • Optimization of SiGe HBT technology for high speed analog and mixed-signal applications

    D.L. Harame;J.M.C. Stork;B.S. Meyerson;K.Y.-J. Hsu

  • Tunneling in base-emitter junctions

    J.M.C. Stork;R.D. Isaac

  • 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

    E.F. Crabbe;J.H. Comfort;W. Lee;J.D. Cressler

  • Design and performance considerations for sub-0.1 /spl mu/m double-gate SOI MOSFET'S

    Hon-Sum Wong;D.J. Frank;Yuan Taur;J.M.C. Stork

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

    J.D. Cressler;E.F. Crabbe;J.H. Comfort;J.M.C. Stork

  • Non-ideal base current in bipolar transistors at low temperatures

    Unknown

  • The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors

    E.F. Crabbe;J.M.C. Stork;G. Baccarani;M.V. Fischetti

  • Bipolar transistor scaling for minimum switching delay and energy dissipation

    J.M.C. Stork

  • SiGe-base heterojunction bipolar transistors: physics and design issues

    G.L. Patton;J.M.C. Stork;J.H. Comfort;E.F. Crabbe

  • Correlation between the diffusive and electrical barrier properties of the interface in polysilicon contacted n + -p junctions

    J.M.C. Stork;M. Arienzo;C.Y. Wong

  • SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY

    B.S. Meyerson;D.L. Harame;J. Stork;E. Crabbe

Frequent Co-Authors

Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
David L. Harame
David L. Harame IBM (United States)
J.Y.-C. Sun
J.Y.-C. Sun National Taiwan University
John D. Cressler
John D. Cressler Georgia Institute of Technology
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Phillip J. Restle
Phillip J. Restle IBM (United States)
Subramanian S. Iyer
Subramanian S. Iyer University of California, Los Angeles
jack o chu
jack o chu IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego

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