Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe.
IEEE Transactions on Electron Devices (1995)
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe.
IEEE Electron Device Letters (1990)
Deactivation of the boron acceptor in silicon by hydrogen
Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou.
Applied Physics Letters (1983)
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe.
IEEE Transactions on Electron Devices (1995)
Submicrometer-channel CMOS for low-temperature operation
J.Y.-C. Sun;Yuan Taur;R.H. Dennard;S.P. Klepner.
IEEE Transactions on Electron Devices (1987)
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
J.D. Cressler;J.H. Comfort;E.F. Crabbe;G.L. Patton.
IEEE Transactions on Electron Devices (1993)
Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies
Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou.
Journal of Applied Physics (1984)
A high-performance 0.25- mu m CMOS technology. II. Technology
B. Davari;W.H. Chang;K.E. Petrillo;C.Y. Wong.
IEEE Transactions on Electron Devices (1992)
Characteristics of SOI FET's under pulsed conditions
K.A. Jenkins;J.Y.-C. Sun;J. Gautier.
IEEE Transactions on Electron Devices (1997)
Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences
Chih‐Tang Sah;Jack Yuan‐Chen Sun;Joseph Jeng‐Tao Tzou.
Journal of Applied Physics (1983)
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