World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
5729
World Ranking
4548
National Ranking
77

Overview

J.Y.-C. Sun is a researcher affiliated with the Taiwan Semiconductor Research Institute in Taiwan. Their work is situated primarily in the fields of physics and astronomy, with a strong focus on materials science and related subfields such as atomic and molecular physics, condensed matter physics, and materials chemistry.

The scientist's recent research contributions include the publication titled "Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process" published in 2022 in the IEEE Electron Device Letters. This paper explores advanced spintronic devices, contributing to the understanding of magnetic properties and spin-orbit torque mechanisms. The paper has been cited five times, indicating engagement by the research community.

The topics addressed in their research cover:

  • Magnetic properties of thin films
  • Physics of superconductivity and magnetism
  • ZnO doping and properties

J.Y.-C. Sun collaborates regularly with a number of coauthors, including:

  • Ya-Jui Tsou
  • Wei J. Chen
  • Chin-Yu Liu
  • Yi-Ju Chen
  • Kai-Shin Li

Their publication record is linked to frequent contributions to the IEEE Electron Device Letters, which serves as one of the main venues for disseminating their research findings in the domain of electron devices and related materials science.

Best Publications

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Submicrometer-channel CMOS for low-temperature operation

    J.Y.-C. Sun;Yuan Taur;R.H. Dennard;S.P. Klepner

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

    J.D. Cressler;J.H. Comfort;E.F. Crabbe;G.L. Patton

  • Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies

    Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou

  • A high-performance 0.25- mu m CMOS technology. II. Technology

    B. Davari;W.H. Chang;K.E. Petrillo;C.Y. Wong

  • Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

    Qian Xie;Chia-Jung Lee;Jun Xu;C. Wann

  • Characteristics of SOI FET's under pulsed conditions

    K.A. Jenkins;J.Y.-C. Sun;J. Gautier

  • Doping of n/sup +/ and p/sup +/ polysilicon in a dual-gate CMOS process

    C.Y. Wong;J.Y. Sun;Y. Taur;C.S. Oh

  • Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences

    Chih‐Tang Sah;Jack Yuan‐Chen Sun;Joseph Jeng‐Tao Tzou

  • Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating

    K.A. Jenkins;J.Y.-C. Sun

  • Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injection

    Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou

  • On the accuracy of channel length characterization of LDD MOSFET's

    J.Y.-C. Sun;M.R. Wordeman;S.E. Laux

  • CMOS technology for MS/RF SoC

    C.H. Diaz;D.D. Tang;J.Y.-C. Sun

  • Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection

    Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou

  • Doping of n+ and p+ polysilicon in a dual-gate CMOS process

    C. Y. Wong;J. Y.C. Sun;Y. Taur;C. S. Oh

  • 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

    E.F. Crabbe;J.H. Comfort;W. Lee;J.D. Cressler

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

    J.D. Cressler;E.F. Crabbe;J.H. Comfort;J.M.C. Stork

  • Source—Drain contact resistance in CMOS with self-aligned TiSi 2

    Yuan Taur;J.Y.-C. Sun;D. Moy;L.K. Wang

  • Body charge related transient effects in floating body SOI NMOSFETs

    J. Gautier;K.A. Jenkins;J.Y.-C. Sun

  • A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

    K.K. Young;S.Y. Wu;C.C. Wu;C.H. Wang

Frequent Co-Authors

John D. Cressler
John D. Cressler Georgia Institute of Technology
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
David L. Harame
David L. Harame IBM (United States)
Carlos H. Diaz
Carlos H. Diaz Taiwan Semiconductor Manufacturing Company (United States)
Chenming Hu
Chenming Hu University of California, Berkeley
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)

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