World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
5729
World Ranking
4548
National Ranking
77

J.Y.-C. Sun publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where J.Y.-C. Sun sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 155 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

J.Y.-C. Sun D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where J.Y.-C. Sun sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

J.Y.-C. Sun is a researcher affiliated with the Taiwan Semiconductor Research Institute in Taiwan. Their work is situated primarily in the fields of physics and astronomy, with a strong focus on materials science and related subfields such as atomic and molecular physics, condensed matter physics, and materials chemistry.

The scientist's recent research contributions include the publication titled "Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process" published in 2022 in the IEEE Electron Device Letters. This paper explores advanced spintronic devices, contributing to the understanding of magnetic properties and spin-orbit torque mechanisms. The paper has been cited five times, indicating engagement by the research community.

The topics addressed in their research cover:

  • Magnetic properties of thin films
  • Physics of superconductivity and magnetism
  • ZnO doping and properties

J.Y.-C. Sun collaborates regularly with a number of coauthors, including:

  • Ya-Jui Tsou
  • Wei J. Chen
  • Chin-Yu Liu
  • Yi-Ju Chen
  • Kai-Shin Li

Their publication record is linked to frequent contributions to the IEEE Electron Device Letters, which serves as one of the main venues for disseminating their research findings in the domain of electron devices and related materials science.

Best Publications

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

    G.L. Patton;J.H. Comfort;B.S. Meyerson;E.F. Crabbe

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Submicrometer-channel CMOS for low-temperature operation

    J.Y.-C. Sun;Yuan Taur;R.H. Dennard;S.P. Klepner

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

    J.D. Cressler;J.H. Comfort;E.F. Crabbe;G.L. Patton

  • Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies

    Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou

  • A high-performance 0.25- mu m CMOS technology. II. Technology

    B. Davari;W.H. Chang;K.E. Petrillo;C.Y. Wong

  • Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

    Qian Xie;Chia-Jung Lee;Jun Xu;C. Wann

  • Characteristics of SOI FET's under pulsed conditions

    K.A. Jenkins;J.Y.-C. Sun;J. Gautier

  • Doping of n/sup +/ and p/sup +/ polysilicon in a dual-gate CMOS process

    C.Y. Wong;J.Y. Sun;Y. Taur;C.S. Oh

  • Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences

    Chih‐Tang Sah;Jack Yuan‐Chen Sun;Joseph Jeng‐Tao Tzou

  • Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating

    K.A. Jenkins;J.Y.-C. Sun

  • Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injection

    Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou

  • On the accuracy of channel length characterization of LDD MOSFET's

    J.Y.-C. Sun;M.R. Wordeman;S.E. Laux

  • CMOS technology for MS/RF SoC

    C.H. Diaz;D.D. Tang;J.Y.-C. Sun

  • Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection

    Chih Tang Sah;Jack Yuan Chen Sun;Joseph Jeng Tao Tzou

  • Doping of n+ and p+ polysilicon in a dual-gate CMOS process

    C. Y. Wong;J. Y.C. Sun;Y. Taur;C. S. Oh

  • 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

    E.F. Crabbe;J.H. Comfort;W. Lee;J.D. Cressler

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

    J.D. Cressler;E.F. Crabbe;J.H. Comfort;J.M.C. Stork

  • Source—Drain contact resistance in CMOS with self-aligned TiSi 2

    Yuan Taur;J.Y.-C. Sun;D. Moy;L.K. Wang

  • Body charge related transient effects in floating body SOI NMOSFETs

    J. Gautier;K.A. Jenkins;J.Y.-C. Sun

  • A 0.13 /spl mu/m CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

    K.K. Young;S.Y. Wu;C.C. Wu;C.H. Wang

Frequent Co-Authors

John D. Cressler
John D. Cressler Georgia Institute of Technology
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
David L. Harame
David L. Harame IBM (United States)
Carlos H. Diaz
Carlos H. Diaz Taiwan Semiconductor Manufacturing Company (United States)
Chenming Hu
Chenming Hu University of California, Berkeley
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)

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