The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lawrence E. Larson sits on this spectrum.
This scientist: 429 publications — 78th percentile
78% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lawrence E. Larson sits on this spectrum.
This scientist: 72 D-Index — 89th percentile
89% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Lawrence E. Larson mostly deals with Electrical engineering, Electronic engineering, Amplifier, RF power amplifier and Power-added efficiency. Lawrence E. Larson interconnects Optoelectronics and Gallium arsenide in the investigation of issues within Electrical engineering. His Electronic engineering research integrates issues from Intermodulation, Operational amplifier and Baseband.
His Amplifier study frequently draws connections to adjacent fields such as BiCMOS. His research investigates the connection between RF power amplifier and topics such as Switched-mode power supply that intersect with problems in Power factor. His CMOS study incorporates themes from Chip and Noise figure.
Lawrence E. Larson spends much of his time researching Electrical engineering, Electronic engineering, Amplifier, CMOS and Optoelectronics. His studies in Radio frequency, Integrated circuit, Heterojunction bipolar transistor, Noise figure and BiCMOS are all subfields of Electrical engineering research. The concepts of his Electronic engineering study are interwoven with issues in Transmitter, Baseband and Wireless.
His study involves RF power amplifier, Linear amplifier, Direct-coupled amplifier, Power-added efficiency and Transistor array, a branch of Amplifier. His studies in CMOS integrate themes in fields like Phase noise, Electrical impedance, Chip and dBm. Lawrence E. Larson works mostly in the field of Optoelectronics, limiting it down to concerns involving High-electron-mobility transistor and, occasionally, Field-effect transistor.
Lawrence E. Larson mainly investigates Electrical engineering, Electronic engineering, CMOS, Amplifier and Wireless. Many of his studies on Electrical engineering involve topics that are commonly interrelated, such as Extremely high frequency. Lawrence E. Larson has researched Electronic engineering in several fields, including Broadband and Insertion loss.
His work carried out in the field of CMOS brings together such families of science as Phase noise, Oscillation and dBm. His research ties Silicon on insulator and Amplifier together. His studies deal with areas such as Interface, Radio frequency, Computer hardware and Wireless sensor network as well as Wireless.
His main research concerns Electrical engineering, Amplifier, Electronic engineering, CMOS and RF power amplifier. His Electrical engineering research focuses on Electrical impedance and BiCMOS. Lawrence E. Larson focuses mostly in the field of Amplifier, narrowing it down to topics relating to Silicon on insulator and, in certain cases, Shunt, Biasing and Electricity generation.
His Electronic engineering research is multidisciplinary, relying on both Wireless, Band-stop filter, Voltage-controlled filter, Electronic filter topology and Insertion loss. His CMOS research focuses on dBm and how it connects with Gate resistance, Soi cmos, Power dividers and directional couplers and Inductor. His research integrates issues of Wide dynamic range, Boost converter and Input impedance in his study of RF power amplifier.
V. Aparin;L.E. Larson
G. Hanington;Pin-Fan Chen;P.M. Asbeck;L.E. Larson
M. Iwamoto;A. Williams;Pin-Fan Chen;A.G. Metzger
M. Iwamoto;A. Williams;Pin-Fan Chen;A. Metzger
Feipeng Wang;D.F. Kimball;J.D. Popp;A.H. Yang
Feipeng Wang;A.H. Yang;D.F. Kimball;L.E. Larson
D.F. Kimball;Jinho Jeong;Chin Hsia;P. Draxler
L.E. Larson
L.D. Nguyen;L.E. Larson;U.K. Mishra
Lawrence E. Larson
Feipeng Wang;D.F. Kimball;D.Y. Lie;P.M. Asbeck
W.C.E. Neo;Yu Lin;Xiao-dong Liu;L.C.N. de Vreede
Chengzhou Wang;M. Vaidyanathan;L.E. Larson
M. Sushchik;N. Rulkov;L. Larson;L. Tsimring
Preston Jett;Lawrence E. Larson;Bret A. Pollack;David A. Rowe
L.E. Larson;R.H. Hackett;M.A. Melendes;R.F. Lohr
M. Hassan;L. E. Larson;V. W. Leung;P. M. Asbeck
James L. Richards;Preston L. Jett;Larry W. Fullerton;Lawrence E. Larson
Liwei Sheng;J.C. Jensen;L.E. Larson
Ming Yin;David A. Borton;Jacob Komar;Naubahar Agha
Perry A. Macdonald;Lawrence Larson;Jeffrey B. Shealy;Michael Case
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