World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4763
World Ranking
5603
National Ranking
1919

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Electronics

His primary areas of study are Electrical engineering, Electronic engineering, Optoelectronics, Silicon-germanium and CMOS. His work focuses on many connections between Electrical engineering and other disciplines, such as Capacitance, that overlap with his field of interest in Engineering physics and Transistor. His Electronic engineering study incorporates themes from Noise, Transmission line, Electronic circuit and Network analysis.

Robert A. Groves interconnects Air gap, Capacitive sensing and Radio frequency in the investigation of issues within Optoelectronics. The various areas that Robert A. Groves examines in his Silicon-germanium study include Equivalent circuit, Inductor, RLC circuit and Wideband. His CMOS research includes themes of Amplifier and Very-large-scale integration.

His most cited work include:

  • Frequency-independent equivalent-circuit model for on-chip spiral inductors (322 citations)
  • Method of fabricating micro-electromechanical switches on cmos compatible substrates (166 citations)
  • Current status and future trends of SiGe BiCMOS technology (148 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Electrical engineering, Optoelectronics, Electronic engineering, Inductor and CMOS. His Electrical engineering research is multidisciplinary, incorporating perspectives in Silicon on insulator and Silicon-germanium. In his research on the topic of Optoelectronics, Silicon is strongly related with Substrate.

His Electronic engineering research is multidisciplinary, relying on both Wireless and Noise. His Inductor research incorporates elements of Inductance, Q factor, Capacitive coupling and Electromagnetic coil. His CMOS research is multidisciplinary, relying on both Capacitance, Radio frequency and Amplifier, Noise figure.

He most often published in these fields:

  • Electrical engineering (55.30%)
  • Optoelectronics (41.67%)
  • Electronic engineering (34.09%)

What were the highlights of his more recent work (between 2010-2020)?

  • Inductor (28.79%)
  • Electronic engineering (34.09%)
  • Electrical engineering (55.30%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Inductor, Electronic engineering, Electrical engineering, Conductor and Multipath propagation. His biological study spans a wide range of topics, including Microprocessor and Inductance. As a part of the same scientific study, Robert A. Groves usually deals with the Electronic engineering, concentrating on Clock domain crossing and frequently concerns with Digital clock manager, CPU multiplier, Self-clocking signal and Bandwidth.

His research ties Fin and Electrical engineering together. His study in Conductor is interdisciplinary in nature, drawing from both Transformer, Spiral, Base and Integrated circuit. The various areas that Robert A. Groves examines in his Electrical conductor study include Conical surface and Optoelectronics, Semiconductor, Electrically conductive.

Between 2010 and 2020, his most popular works were:

  • 3D multipath inductor (16 citations)
  • Capturing mutual coupling effects between an integrated circuit chip and chip package (15 citations)
  • Inductor structure having increased inductance density and quality factor (12 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Electronics

Robert A. Groves focuses on Electronic engineering, Inductor, Inductance, Electrical engineering and Electrical conductor. His Electronic engineering research includes themes of Turn, Multipath propagation, Self-clocking signal and Position. Robert A. Groves interconnects Acoustics, Spiral, Base, Dielectric and Conductor in the investigation of issues within Inductance.

His Electrical engineering study combines topics in areas such as Quality and Composite material.

Best Publications

  • Frequency-independent equivalent-circuit model for on-chip spiral inductors

    Yu Cao;R.A. Groves;Xuejue Huang;N.D. Zamdmer

  • Frequency-independent equivalent circuit model for on-chip spiral inductors

    Yu Cao;R.A. Groves;N.D. Zamdmer;J.-O. Plouchart

  • Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

    B. Jagannathan;M. Khater;F. Pagette;J.-S. Rieh

  • Current status and future trends of SiGe BiCMOS technology

    D.L. Harame;D.C. Ahlgren;D.D. Coolbaugh;J.S. Dunn

  • A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

    A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich

  • Method of fabricating micro-electromechanical switches on cmos compatible substrates

    Richard P. Volant;John C. Bisson;Donna R. Cote;Timothy J. Dalton

  • High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

    R. Groves;J. Malinowski;R. Volant;D. Jadus

  • Foundation of rf CMOS and SiGe BiCMOS technologies

    J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld

  • Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

    R. Groves;D.L. Harame;D. Jadus

  • Low resistance and inductance backside through vias and methods of fabricating same

    Mete Erturk;Robert A. Groves;Jeffrey Bowman Johnson;Alvin Jose Joseph

  • Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

    D.C. Ahlgren;M. Gilbert;D. Greenberg;J. Jeng

  • RF potential of a 0.18-/spl mu/m CMOS logic device technology

    J.N. Burghartz;M. Hargrove;C.S. Webster;R.A. Groves

  • A SiGe HBT BiCMOS technology for mixed signal RF applications

    D.C. Ahlgren;G. Freeman;S. Subbanna;R. Groves

  • Integrated variable inductor, inductor/varactor tuning circuit

    K Jeidasu Dale;Robert A Groves;デイル・ケイ・ジェイダス;ロバート・エイ・グルーヴズ

  • RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications

    Shyam Parthasarathy;Amit Trivedi;Saurabh Sirohi;Robert Groves

  • SiGe HBT technology: device and application issues

    D. Harame;L. Larson;M. Case;S. Kovacic

  • A 12dBm 320GHz GBW distributed amplifier in a 0.12/spl mu/m SOI CMOS

    Jonghae Kim;J.-O. Plouchart;N. Zamdmer;R. Trzcenski

  • Suspended transmission line structures in back end of line processing

    Anil K. Chinthakindi;Robert A. Groves;Youri V. Tretiakov;Kunal Vaed

  • MEMS RF switch with low actuation voltage

    Hariklia Deligianni;Robert Groves;Christopher Jahnes;Jennifer L. Lund

  • A 4-91-GHz traveling-wave amplifier in a standard 0.12-/spl mu/m SOI CMOS microprocessor technology

    J.-O. Plouchart;Jonghae Kim;N. Zamdmer;Liang-Hung Lu

Frequent Co-Authors

Gregory G. Freeman
Gregory G. Freeman IBM (United States)
David L. Harame
David L. Harame IBM (United States)
Douglas D. Coolbaugh
Douglas D. Coolbaugh University at Albany, State University of New York
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Jean-Olivier Plouchart
Jean-Olivier Plouchart IBM (United States)
Christopher V. Jahnes
Christopher V. Jahnes IBM (United States)
John D. Cressler
John D. Cressler Georgia Institute of Technology
Guofu Niu
Guofu Niu Auburn University

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