Marty R. Shaneyfelt

What is he best known for?

The fields of study he is best known for:

• Electron
• Semiconductor
• Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Irradiation, Electrical engineering, Silicon on insulator and Electronic engineering. The Optoelectronics study combines topics in areas such as Transistor, Gate oxide and Capacitor. His Irradiation research includes elements of Molecular physics, Atomic physics, MOSFET, Radiation and Electron.

His work deals with themes such as Electronic circuit, Single event upset, Transient, Threshold voltage and Proton, which intersect with Silicon on insulator. His Electronic engineering research focuses on subjects like Integrated circuit, which are linked to Ion implantation, Shallow trench isolation, Temperature cycling and Space charge. His studies deal with areas such as Radiation hardening, Scaling and Static random-access memory as well as CMOS.

His most cited work include:

• Radiation Effects in MOS Oxides (439 citations)
• Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices (368 citations)
• Radiation effects in SOI technologies (315 citations)

What are the main themes of his work throughout his whole career to date?

Marty R. Shaneyfelt mostly deals with Optoelectronics, Irradiation, Electronic engineering, Electrical engineering and Transistor. His biological study spans a wide range of topics, including Radiation hardening, Radiation and MOSFET. His work carried out in the field of Irradiation brings together such families of science as Analytical chemistry, Molecular physics, Dielectric, Atomic physics and Proton.

He has researched Electronic engineering in several fields, including Stress and Wafer. His work on Capacitor and Voltage as part of general Electrical engineering research is often related to Upset, thus linking different fields of science. His Transistor study combines topics from a wide range of disciplines, such as Impact ionization and Leakage.

He most often published in these fields:

• Optoelectronics (51.27%)
• Irradiation (30.08%)
• Electronic engineering (23.31%)

What were the highlights of his more recent work (between 2010-2019)?

• Optoelectronics (51.27%)
• Atomic physics (11.86%)
• Electronic engineering (23.31%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Atomic physics, Electronic engineering, Irradiation and Silicon on insulator. His Optoelectronics research is mostly focused on the topic Diode. His Atomic physics research is multidisciplinary, incorporating perspectives in Threshold voltage, Ionization, Proton and Non-volatile memory.

Marty R. Shaneyfelt combines subjects such as Radiation hardening, Heavy ion and Integrated circuit with his study of Electronic engineering. The concepts of his Irradiation study are interwoven with issues in Thermal conduction and Nanotechnology. His Silicon on insulator research incorporates themes from Single event upset, Static random-access memory and Laser.

Between 2010 and 2019, his most popular works were:

• Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance (106 citations)
• Initial Assessment of the Effects of Radiation on the Electrical Characteristics of ${ m TaO}_{ m x}$ Memristive Memories (55 citations)
• Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects (47 citations)

In his most recent research, the most cited papers focused on:

• Electron
• Semiconductor
• Integrated circuit

Marty R. Shaneyfelt spends much of his time researching Atomic physics, Upset, Radiation hardening, Irradiation and Radiation. His study looks at the relationship between Atomic physics and topics such as Proton, which overlap with Silicon on insulator, Ionization and Electronic circuit. His Radiation hardening study combines topics in areas such as Integrated circuit, Microelectronics, Dielectric strength, MOSFET and Electronic engineering.

His research integrates issues of Nanotechnology, Optoelectronics, Doping, Logic gate and Threshold voltage in his study of Irradiation. His research in Optoelectronics intersects with topics in Power MOSFET, Failure rate, Space technology, Electrical engineering and Gate oxide. His work deals with themes such as Thermal conduction and Transistor, which intersect with Static random-access memory.