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Francois Andrieu

Francois Andrieu

CEA LETI
France

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 40 4472 4290 79 77 348 7225

Francois Andrieu publications per year

The chart shows the history of publications by Francois Andrieu between 2003 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Francois Andrieu published across 23 years, from 2003 to 2025, averaging 16 papers a year. Output peaked at 34 publications in 2013. 14 of the 367 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 2003 to 2025. Vertical axis: number of publications, 0 to 34. Peak 34 publications in 2013. 2003: 1 publication 2004: 6 publications 2005: 10 publications 2006: 13 publications 2007: 11 publications 2008: 16 publications 2009: 25 publications 2010: 29 publications 2011: 25 publications 2012: 33 publications 2013: 34 publications 2014: 22 publications 2015: 16 publications 2016: 16 publications 2017: 16 publications 2018: 7 publications 2019: 12 publications 2020: 14 publications 2021: 14 publications 2022: 17 publications 2023: 16 publications 2024: 7 publications 2025: 7 publications
2003 2025

367 publications in total across all disciplines

View publications per year as a table
Francois Andrieu: publications per year, 2003 to 2025
Year Publications
2003 1
2004 6
2005 10
2006 13
2007 11
2008 16
2009 25
2010 29
2011 25
2012 33
2013 34
2014 22
2015 16
2016 16
2017 16
2018 7
2019 12
2020 14
2021 14
2022 17
2023 16
2024 7
2025 7
Total 367
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Francois Andrieu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Francois Andrieu sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 348 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 348
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Francois Andrieu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Francois Andrieu sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 40 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205 40
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Francois Andrieu is affiliated with CEA LETI in France and has a research focus predominantly in the field of engineering, with a specialization in electrical and electronic engineering.

Their work covers several interconnected subfields including materials chemistry, cellular and molecular neuroscience, cognitive neuroscience, and polymers and plastics. The main topics addressed in their research encompass advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, phase-change materials and chalcogenides, CCD and CMOS imaging sensors, integrated circuits and semiconductor failure analysis, as well as advancements in semiconductor devices and circuit design.

Francois Andrieu has contributed to publications in a variety of notable scientific venues. These include:

  • IEEE Transactions on Electron Devices
  • Nature Communications
  • Journal of Applied Physics
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • IEEE Journal of the Electron Devices Society

Their recent published papers feature topics from hardware synapses for neurocomputing to memristor-based neural networks and advanced memory arrays. Selected papers include:

  • A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing, 2023, Nature Communications
  • Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell, 2024, Nature Communications
  • 16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration, 2021, IEEE Transactions on Electron Devices
  • High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays, 2022, IEEE Transactions on Electron Devices

Throughout their career, they have collaborated frequently with a number of co-authors, including N. Castellani, L. Grenouillet, C. Carabasse, V. Meli, and G. Navarro.

Best Publications

  • Impact of SOI, Si 1-x Ge x OI and GeOI substrates on CMOS compatible Tunnel FET performance

    F. Mayer;C. Le Royer;J.-F. Damlencourt;K. Romanjek

  • Advances, challenges and opportunities in 3D CMOS sequential integration

    P. Batude;M. Vinet;B. Previtali;C. Tabone

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs

    K. Romanjek;F. Andrieu;T. Ernst;G. Ghibaudo

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Engineered substrates for future More Moore and More than Moore integrated devices

    L. Clavelier;C. Deguet;L. Di Cioccio;E. Augendre

  • Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

    M. Casse;L. Thevenod;B. Guillaumot;L. Tosti

  • Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

    E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  • FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

    C. Fenouillet-Beranger;S. Denorme;P. Perreau;C. Buj

  • Engineering strained silicon on insulator wafers with the Smart CutTM technology

    B. Ghyselen;J.-M. Hartmann;T. Ernst;C. Aulnette

  • Performance and design considerations for gate-all-around stacked-NanoWires FETs

    S. Barraud;V. Lapras;B. Previtali;M. P. Samson

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • 14nm FDSOI technology for high speed and energy efficient applications

    Olivier Weber;E. Josse;F. Andrieu;A. Cros

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

    Thomas P. Ernst;Francois Andrieu;O. Weber;Jean-Michel Hartmann

  • Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

    T. Ernst;C. Dupre;C. Isheden;E. Bernard

  • 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

    S. Barraud;B. Previtali;C. Vizioz;J.-M. Hartmann

  • Strained tunnel FETs with record I ON : first demonstration of ETSOI TFETs with SiGe channel and RSD

    A. Villalon;C. Le Royer;M. Casse;D. Cooper

  • 3D Sequential Integration: Application-driven technological achievements and guidelines

    P. Batude;L. Brunet;C. Fenouillet-Beranger;F. Andrieu

Frequent Co-Authors

O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
C. Fenouillet-Beranger
C. Fenouillet-Beranger CEA LETI
Denis Flandre
Denis Flandre Université Catholique de Louvain
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Francisco Gamiz
Francisco Gamiz University of Granada
Maud Vinet
Maud Vinet Grenoble Alpes University
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)

External Links

Personal website of Francois Andrieu Google Scholar page

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Related Online Degrees & Career Pathways

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For individuals looking to upskill quickly, there are excellent short certificate programs that pay well online, which can complement an engineering background and enhance career prospects. These accelerated programs can open doors to specialized roles in industries relying on electrical and electronics expertise.

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For professionals aiming to transition into leadership, pursuing a fast track project management degree online can be a strategic move. Project management skills complement technical expertise, equipping graduates to manage complex engineering projects efficiently.

Best Scientists Citing Francois Andrieu

Sorin Cristoloveanu

Sorin Cristoloveanu

Grenoble Institute of Technology

Publications: 92

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 82

Denis Flandre

Denis Flandre

Université Catholique de Louvain

Publications: 45

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 45

Cor Claeys

Cor Claeys

KU Leuven

Publications: 39

Jean-Pierre Raskin

Jean-Pierre Raskin

Université Catholique de Louvain

Publications: 38

Francisco Gamiz

Francisco Gamiz

University of Granada

Publications: 35

Scott E. Thompson

Scott E. Thompson

University of Florida

Publications: 26

Maud Vinet

Maud Vinet

Grenoble Alpes University

Publications: 25

Nadine Collaert

Nadine Collaert

Imec

Publications: 24

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 23

S. Mantl

S. Mantl

Forschungszentrum Jülich

Publications: 22

Shinichi Takagi

Shinichi Takagi

University of Tokyo

Publications: 22

O. Faynot

O. Faynot

CEA LETI

Publications: 22

Qing-Tai Zhao

Qing-Tai Zhao

Peking University

Publications: 21

David Esseni

David Esseni

University of Udine

Publications: 21

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