World's Best Scientists 2026 revealed!
Francois Andrieu

Francois Andrieu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
7225
World Ranking
4472
National Ranking
79

Francois Andrieu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Francois Andrieu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 348 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Francois Andrieu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Francois Andrieu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Francois Andrieu is affiliated with CEA LETI in France and has a research focus predominantly in the field of engineering, with a specialization in electrical and electronic engineering.

Their work covers several interconnected subfields including materials chemistry, cellular and molecular neuroscience, cognitive neuroscience, and polymers and plastics. The main topics addressed in their research encompass advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, phase-change materials and chalcogenides, CCD and CMOS imaging sensors, integrated circuits and semiconductor failure analysis, as well as advancements in semiconductor devices and circuit design.

Francois Andrieu has contributed to publications in a variety of notable scientific venues. These include:

  • IEEE Transactions on Electron Devices
  • Nature Communications
  • Journal of Applied Physics
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • IEEE Journal of the Electron Devices Society

Their recent published papers feature topics from hardware synapses for neurocomputing to memristor-based neural networks and advanced memory arrays. Selected papers include:

  • A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing, 2023, Nature Communications
  • Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell, 2024, Nature Communications
  • 16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration, 2021, IEEE Transactions on Electron Devices
  • High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays, 2022, IEEE Transactions on Electron Devices

Throughout their career, they have collaborated frequently with a number of co-authors, including N. Castellani, L. Grenouillet, C. Carabasse, V. Meli, and G. Navarro.

Best Publications

  • Impact of SOI, Si 1-x Ge x OI and GeOI substrates on CMOS compatible Tunnel FET performance

    F. Mayer;C. Le Royer;J.-F. Damlencourt;K. Romanjek

  • Advances, challenges and opportunities in 3D CMOS sequential integration

    P. Batude;M. Vinet;B. Previtali;C. Tabone

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs

    K. Romanjek;F. Andrieu;T. Ernst;G. Ghibaudo

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Engineered substrates for future More Moore and More than Moore integrated devices

    L. Clavelier;C. Deguet;L. Di Cioccio;E. Augendre

  • Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

    M. Casse;L. Thevenod;B. Guillaumot;L. Tosti

  • Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

    E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  • FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

    C. Fenouillet-Beranger;S. Denorme;P. Perreau;C. Buj

  • Engineering strained silicon on insulator wafers with the Smart CutTM technology

    B. Ghyselen;J.-M. Hartmann;T. Ernst;C. Aulnette

  • Performance and design considerations for gate-all-around stacked-NanoWires FETs

    S. Barraud;V. Lapras;B. Previtali;M. P. Samson

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • 14nm FDSOI technology for high speed and energy efficient applications

    Olivier Weber;E. Josse;F. Andrieu;A. Cros

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

    Thomas P. Ernst;Francois Andrieu;O. Weber;Jean-Michel Hartmann

  • Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

    T. Ernst;C. Dupre;C. Isheden;E. Bernard

  • 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

    S. Barraud;B. Previtali;C. Vizioz;J.-M. Hartmann

  • Strained tunnel FETs with record I ON : first demonstration of ETSOI TFETs with SiGe channel and RSD

    A. Villalon;C. Le Royer;M. Casse;D. Cooper

  • 3D Sequential Integration: Application-driven technological achievements and guidelines

    P. Batude;L. Brunet;C. Fenouillet-Beranger;F. Andrieu

Frequent Co-Authors

O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Denis Flandre
Denis Flandre Université Catholique de Louvain
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Francisco Gamiz
Francisco Gamiz University of Granada
Maud Vinet
Maud Vinet Grenoble Alpes University
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)

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